Characterization and Modelling of THz Schottky Diodes

Tero Kiuru

    Research output: Chapter in Book/Report/Conference proceedingConference article in proceedingsScientificpeer-review

    3 Citations (Scopus)

    Abstract

    Efficient characterization and modelling techniques have a key role in the development of Schottky diode-based devices with state-of-the-art performance. This paper makes an effort to introduce such techniques and to provide examples of how they are used by the Schottky community. The modelling techniques covered in the paper are circuit simulator and electro-magnetic modelling. Characterization methods include current-voltage, capacitance-voltage, S-parameter, test jig-based, and thermal measurement techniques.
    Original languageEnglish
    Title of host publicationProceedings
    Subtitle of host publication39th International Conference on Infrared, Millimeter, and Terahertz waves, IRMMW-THz, 2014
    PublisherIEEE Institute of Electrical and Electronic Engineers
    Number of pages3
    ISBN (Electronic)978-1-4799-3877-3
    DOIs
    Publication statusPublished - 2014
    MoE publication typeA4 Article in a conference publication
    Event39th International Conference on Infrared, Millimeter, and Terahertz waves, IRMMW-THz 2014 - Tucson, AZ, United States
    Duration: 14 Sept 201419 Sept 2014

    Conference

    Conference39th International Conference on Infrared, Millimeter, and Terahertz waves, IRMMW-THz 2014
    Abbreviated titleIRMMW-THz 2014
    Country/TerritoryUnited States
    CityTucson, AZ
    Period14/09/1419/09/14

    Keywords

    • schottky diodes
    • characterisation
    • THz
    • modelling

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