Characterization and Modelling of THz Schottky Diodes

Research output: Chapter in Book/Report/Conference proceedingConference article in proceedingsScientificpeer-review

2 Citations (Scopus)

Abstract

Efficient characterization and modelling techniques have a key role in the development of Schottky diode-based devices with state-of-the-art performance. This paper makes an effort to introduce such techniques and to provide examples of how they are used by the Schottky community. The modelling techniques covered in the paper are circuit simulator and electro-magnetic modelling. Characterization methods include current-voltage, capacitance-voltage, S-parameter, test jig-based, and thermal measurement techniques.
Original languageEnglish
Title of host publicationProceedings
Subtitle of host publication39th International Conference on Infrared, Millimeter, and Terahertz waves, IRMMW-THz, 2014
PublisherInstitute of Electrical and Electronic Engineers IEEE
Number of pages3
ISBN (Electronic)978-1-4799-3877-3
DOIs
Publication statusPublished - 2014
MoE publication typeA4 Article in a conference publication
Event39th International Conference on Infrared, Millimeter, and Terahertz waves, IRMMW-THz 2014 - Tucson, AZ, United States
Duration: 14 Sep 201419 Sep 2014

Conference

Conference39th International Conference on Infrared, Millimeter, and Terahertz waves, IRMMW-THz 2014
Abbreviated titleIRMMW-THz 2014
CountryUnited States
CityTucson, AZ
Period14/09/1419/09/14

Fingerprint

Diodes
Jigs
Scattering parameters
Electric potential
Capacitance
Simulators
Networks (circuits)
Hot Temperature

Keywords

  • schottky diodes
  • characterisation
  • THz
  • modelling

Cite this

Kiuru, T. (2014). Characterization and Modelling of THz Schottky Diodes. In Proceedings: 39th International Conference on Infrared, Millimeter, and Terahertz waves, IRMMW-THz, 2014 Institute of Electrical and Electronic Engineers IEEE. https://doi.org/10.1109/IRMMW-THz.2014.6956306
Kiuru, Tero. / Characterization and Modelling of THz Schottky Diodes. Proceedings: 39th International Conference on Infrared, Millimeter, and Terahertz waves, IRMMW-THz, 2014. Institute of Electrical and Electronic Engineers IEEE, 2014.
@inproceedings{dd20914f28984714b1a0f46f4a8ffb84,
title = "Characterization and Modelling of THz Schottky Diodes",
abstract = "Efficient characterization and modelling techniques have a key role in the development of Schottky diode-based devices with state-of-the-art performance. This paper makes an effort to introduce such techniques and to provide examples of how they are used by the Schottky community. The modelling techniques covered in the paper are circuit simulator and electro-magnetic modelling. Characterization methods include current-voltage, capacitance-voltage, S-parameter, test jig-based, and thermal measurement techniques.",
keywords = "schottky diodes, characterisation, THz, modelling",
author = "Tero Kiuru",
year = "2014",
doi = "10.1109/IRMMW-THz.2014.6956306",
language = "English",
booktitle = "Proceedings",
publisher = "Institute of Electrical and Electronic Engineers IEEE",
address = "United States",

}

Kiuru, T 2014, Characterization and Modelling of THz Schottky Diodes. in Proceedings: 39th International Conference on Infrared, Millimeter, and Terahertz waves, IRMMW-THz, 2014. Institute of Electrical and Electronic Engineers IEEE, 39th International Conference on Infrared, Millimeter, and Terahertz waves, IRMMW-THz 2014, Tucson, AZ, United States, 14/09/14. https://doi.org/10.1109/IRMMW-THz.2014.6956306

Characterization and Modelling of THz Schottky Diodes. / Kiuru, Tero.

Proceedings: 39th International Conference on Infrared, Millimeter, and Terahertz waves, IRMMW-THz, 2014. Institute of Electrical and Electronic Engineers IEEE, 2014.

Research output: Chapter in Book/Report/Conference proceedingConference article in proceedingsScientificpeer-review

TY - GEN

T1 - Characterization and Modelling of THz Schottky Diodes

AU - Kiuru, Tero

PY - 2014

Y1 - 2014

N2 - Efficient characterization and modelling techniques have a key role in the development of Schottky diode-based devices with state-of-the-art performance. This paper makes an effort to introduce such techniques and to provide examples of how they are used by the Schottky community. The modelling techniques covered in the paper are circuit simulator and electro-magnetic modelling. Characterization methods include current-voltage, capacitance-voltage, S-parameter, test jig-based, and thermal measurement techniques.

AB - Efficient characterization and modelling techniques have a key role in the development of Schottky diode-based devices with state-of-the-art performance. This paper makes an effort to introduce such techniques and to provide examples of how they are used by the Schottky community. The modelling techniques covered in the paper are circuit simulator and electro-magnetic modelling. Characterization methods include current-voltage, capacitance-voltage, S-parameter, test jig-based, and thermal measurement techniques.

KW - schottky diodes

KW - characterisation

KW - THz

KW - modelling

U2 - 10.1109/IRMMW-THz.2014.6956306

DO - 10.1109/IRMMW-THz.2014.6956306

M3 - Conference article in proceedings

BT - Proceedings

PB - Institute of Electrical and Electronic Engineers IEEE

ER -

Kiuru T. Characterization and Modelling of THz Schottky Diodes. In Proceedings: 39th International Conference on Infrared, Millimeter, and Terahertz waves, IRMMW-THz, 2014. Institute of Electrical and Electronic Engineers IEEE. 2014 https://doi.org/10.1109/IRMMW-THz.2014.6956306