Characterization of a semi 3-D sensor coupled to Medipix2

Lukas Tlustos; Juha Kalliopuska; Rafael Ballabriga; Michael Campbell; Simo Eränen; Xavier Llopart

doi:10.1016/j.nima.2007.06.054

Characterization of a semi 3-D sensor coupled to Medipix2

Lukas Tlustos, Juha Kalliopuska, Rafael Ballabriga, Michael Campbell, Simo Eränen, Xavier Llopart

VTT Technical Research Centre of Finland

Research output: Contribution to journal › Article › Scientific › peer-review

7 Citations (Scopus)

Abstract

A thick semi-3D Si sensor has been characterised after bump-bonding to a Medipix2 read-out chip. The bonding quality measured using a 90Sr-source was found to be excellent .
Comparative measurements with respect to a standard planar Si sensor comprising IV-curves, depletion voltage and energy resolution have been performed. IV-curves and depletion voltages correspond to the values expected from the sensor geometry.
The depletion voltage of the semi-3D sensor is significantly lower than the one of the planar sensor. The energy resolution of the semi-3D device has been found to be lower.
The uniformity of the pixel response has been measured using a pulsed 1060 nm laser.

Original language	English
Pages (from-to)	897-901
Journal	Nuclear Instruments and Methods in Physics Research. Section A: Accelerators, Spectrometers, Detectors and Associated Equipment
Volume	580
Issue number	2
DOIs	https://doi.org/10.1016/j.nima.2007.06.054
Publication status	Published - 2007
MoE publication type	A1 Journal article-refereed

Keywords

Silicon Radiation Detectors
3D detectors

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10.1016/j.nima.2007.06.054

Cite this

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title = "Characterization of a semi 3-D sensor coupled to Medipix2",

abstract = "A thick semi-3D Si sensor has been characterised after bump-bonding to a Medipix2 read-out chip. The bonding quality measured using a 90Sr-source was found to be excellent . Comparative measurements with respect to a standard planar Si sensor comprising IV-curves, depletion voltage and energy resolution have been performed. IV-curves and depletion voltages correspond to the values expected from the sensor geometry. The depletion voltage of the semi-3D sensor is significantly lower than the one of the planar sensor. The energy resolution of the semi-3D device has been found to be lower. The uniformity of the pixel response has been measured using a pulsed 1060 nm laser.",

keywords = "Silicon Radiation Detectors, 3D detectors",

author = "Lukas Tlustos and Juha Kalliopuska and Rafael Ballabriga and Michael Campbell and Simo Er{\"a}nen and Xavier Llopart",

year = "2007",

doi = "10.1016/j.nima.2007.06.054",

language = "English",

volume = "580",

pages = "897--901",

journal = "Nuclear Instruments and Methods in Physics Research. Section A: Accelerators, Spectrometers, Detectors and Associated Equipment",

issn = "0168-9002",

publisher = "Elsevier B.V.",

number = "2",

}

Characterization of a semi 3-D sensor coupled to Medipix2. / Tlustos, Lukas; Kalliopuska, Juha; Ballabriga, Rafael et al.
In: Nuclear Instruments and Methods in Physics Research. Section A: Accelerators, Spectrometers, Detectors and Associated Equipment, Vol. 580, No. 2, 2007, p. 897-901.

Research output: Contribution to journal › Article › Scientific › peer-review

TY - JOUR

T1 - Characterization of a semi 3-D sensor coupled to Medipix2

AU - Tlustos, Lukas

AU - Kalliopuska, Juha

AU - Ballabriga, Rafael

AU - Campbell, Michael

AU - Eränen, Simo

AU - Llopart, Xavier

PY - 2007

Y1 - 2007

N2 - A thick semi-3D Si sensor has been characterised after bump-bonding to a Medipix2 read-out chip. The bonding quality measured using a 90Sr-source was found to be excellent . Comparative measurements with respect to a standard planar Si sensor comprising IV-curves, depletion voltage and energy resolution have been performed. IV-curves and depletion voltages correspond to the values expected from the sensor geometry. The depletion voltage of the semi-3D sensor is significantly lower than the one of the planar sensor. The energy resolution of the semi-3D device has been found to be lower. The uniformity of the pixel response has been measured using a pulsed 1060 nm laser.

AB - A thick semi-3D Si sensor has been characterised after bump-bonding to a Medipix2 read-out chip. The bonding quality measured using a 90Sr-source was found to be excellent . Comparative measurements with respect to a standard planar Si sensor comprising IV-curves, depletion voltage and energy resolution have been performed. IV-curves and depletion voltages correspond to the values expected from the sensor geometry. The depletion voltage of the semi-3D sensor is significantly lower than the one of the planar sensor. The energy resolution of the semi-3D device has been found to be lower. The uniformity of the pixel response has been measured using a pulsed 1060 nm laser.

KW - Silicon Radiation Detectors

KW - 3D detectors

U2 - 10.1016/j.nima.2007.06.054

DO - 10.1016/j.nima.2007.06.054

M3 - Article

SN - 0168-9002

VL - 580

SP - 897

EP - 901

JO - Nuclear Instruments and Methods in Physics Research. Section A: Accelerators, Spectrometers, Detectors and Associated Equipment

JF - Nuclear Instruments and Methods in Physics Research. Section A: Accelerators, Spectrometers, Detectors and Associated Equipment

IS - 2

ER -

Characterization of a semi 3-D sensor coupled to Medipix2

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Keywords

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