Characterization of a semi 3-D sensor coupled to Medipix2

Lukas Tlustos, Juha Kalliopuska, Rafael Ballabriga, Michael Campbell, Simo Eränen, Xavier Llopart

Research output: Contribution to journalArticleScientificpeer-review

6 Citations (Scopus)

Abstract

A thick semi-3D Si sensor has been characterised after bump-bonding to a Medipix2 read-out chip. The bonding quality measured using a 90Sr-source was found to be excellent .
Comparative measurements with respect to a standard planar Si sensor comprising IV-curves, depletion voltage and energy resolution have been performed. IV-curves and depletion voltages correspond to the values expected from the sensor geometry.
The depletion voltage of the semi-3D sensor is significantly lower than the one of the planar sensor. The energy resolution of the semi-3D device has been found to be lower.
The uniformity of the pixel response has been measured using a pulsed 1060 nm laser.
Original languageEnglish
Pages (from-to)897-901
JournalNuclear Instruments and Methods in Physics Research. Section A: Accelerators, Spectrometers, Detectors and Associated Equipment
Volume580
Issue number2
DOIs
Publication statusPublished - 2007
MoE publication typeA1 Journal article-refereed

Fingerprint

sensors
Sensors
depletion
Electric potential
electric potential
curves
Pixels
pixels
chips
Geometry
energy
Lasers
geometry
lasers

Keywords

  • Silicon Radiation Detectors
  • 3D detectors

Cite this

Tlustos, Lukas ; Kalliopuska, Juha ; Ballabriga, Rafael ; Campbell, Michael ; Eränen, Simo ; Llopart, Xavier. / Characterization of a semi 3-D sensor coupled to Medipix2. In: Nuclear Instruments and Methods in Physics Research. Section A: Accelerators, Spectrometers, Detectors and Associated Equipment. 2007 ; Vol. 580, No. 2. pp. 897-901.
@article{65afb6021de241d096c6ac29867ac37f,
title = "Characterization of a semi 3-D sensor coupled to Medipix2",
abstract = "A thick semi-3D Si sensor has been characterised after bump-bonding to a Medipix2 read-out chip. The bonding quality measured using a 90Sr-source was found to be excellent . Comparative measurements with respect to a standard planar Si sensor comprising IV-curves, depletion voltage and energy resolution have been performed. IV-curves and depletion voltages correspond to the values expected from the sensor geometry. The depletion voltage of the semi-3D sensor is significantly lower than the one of the planar sensor. The energy resolution of the semi-3D device has been found to be lower. The uniformity of the pixel response has been measured using a pulsed 1060 nm laser.",
keywords = "Silicon Radiation Detectors, 3D detectors",
author = "Lukas Tlustos and Juha Kalliopuska and Rafael Ballabriga and Michael Campbell and Simo Er{\"a}nen and Xavier Llopart",
year = "2007",
doi = "10.1016/j.nima.2007.06.054",
language = "English",
volume = "580",
pages = "897--901",
journal = "Nuclear Instruments and Methods in Physics Research. Section A: Accelerators, Spectrometers, Detectors and Associated Equipment",
issn = "0168-9002",
publisher = "Elsevier",
number = "2",

}

Characterization of a semi 3-D sensor coupled to Medipix2. / Tlustos, Lukas; Kalliopuska, Juha; Ballabriga, Rafael; Campbell, Michael; Eränen, Simo; Llopart, Xavier.

In: Nuclear Instruments and Methods in Physics Research. Section A: Accelerators, Spectrometers, Detectors and Associated Equipment, Vol. 580, No. 2, 2007, p. 897-901.

Research output: Contribution to journalArticleScientificpeer-review

TY - JOUR

T1 - Characterization of a semi 3-D sensor coupled to Medipix2

AU - Tlustos, Lukas

AU - Kalliopuska, Juha

AU - Ballabriga, Rafael

AU - Campbell, Michael

AU - Eränen, Simo

AU - Llopart, Xavier

PY - 2007

Y1 - 2007

N2 - A thick semi-3D Si sensor has been characterised after bump-bonding to a Medipix2 read-out chip. The bonding quality measured using a 90Sr-source was found to be excellent . Comparative measurements with respect to a standard planar Si sensor comprising IV-curves, depletion voltage and energy resolution have been performed. IV-curves and depletion voltages correspond to the values expected from the sensor geometry. The depletion voltage of the semi-3D sensor is significantly lower than the one of the planar sensor. The energy resolution of the semi-3D device has been found to be lower. The uniformity of the pixel response has been measured using a pulsed 1060 nm laser.

AB - A thick semi-3D Si sensor has been characterised after bump-bonding to a Medipix2 read-out chip. The bonding quality measured using a 90Sr-source was found to be excellent . Comparative measurements with respect to a standard planar Si sensor comprising IV-curves, depletion voltage and energy resolution have been performed. IV-curves and depletion voltages correspond to the values expected from the sensor geometry. The depletion voltage of the semi-3D sensor is significantly lower than the one of the planar sensor. The energy resolution of the semi-3D device has been found to be lower. The uniformity of the pixel response has been measured using a pulsed 1060 nm laser.

KW - Silicon Radiation Detectors

KW - 3D detectors

U2 - 10.1016/j.nima.2007.06.054

DO - 10.1016/j.nima.2007.06.054

M3 - Article

VL - 580

SP - 897

EP - 901

JO - Nuclear Instruments and Methods in Physics Research. Section A: Accelerators, Spectrometers, Detectors and Associated Equipment

JF - Nuclear Instruments and Methods in Physics Research. Section A: Accelerators, Spectrometers, Detectors and Associated Equipment

SN - 0168-9002

IS - 2

ER -