Characterization of aluminum oxide tunnel barriers by combining transport measurements and transmission electron microscopy imaging

T. Aref, A. Averin, S. van Dijken, A. Ferring, M. Koberidze, V.F. Maisi, H.Q. Nguyend, R.M. Nieminen, J.P. Pekola, L.D. Yao

Research output: Contribution to journalArticleScientificpeer-review

12 Citations (Scopus)

Abstract

We present two approaches for studying the uniformity of a tunnel barrier. The first approach is based on measuring single-electron and two-electron tunneling in a hybrid single-electron transistor. Our measurements indicate that the effective area of a conduction channel is about one order of magnitude larger than predicted by theoretical calculations. With the second method, transmission electron microscopy, we demonstrate that variations in the barrier thickness are a plausible explanation for the larger effective area and an enhancement of higher order tunneling processes.
Original languageEnglish
Article number073702
Number of pages4
JournalJournal of Applied Physics
Volume116
Issue number7
DOIs
Publication statusPublished - 2014
MoE publication typeA1 Journal article-refereed

Fingerprint

tunnels
aluminum oxides
transmission electron microscopy
single electron transistors
electron tunneling
conduction
augmentation
electrons

Keywords

  • electron microscopy
  • tunneling
  • aluminium
  • copper
  • tunnel junctions

Cite this

Aref, T. ; Averin, A. ; van Dijken, S. ; Ferring, A. ; Koberidze, M. ; Maisi, V.F. ; Nguyend, H.Q. ; Nieminen, R.M. ; Pekola, J.P. ; Yao, L.D. / Characterization of aluminum oxide tunnel barriers by combining transport measurements and transmission electron microscopy imaging. In: Journal of Applied Physics. 2014 ; Vol. 116, No. 7.
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abstract = "We present two approaches for studying the uniformity of a tunnel barrier. The first approach is based on measuring single-electron and two-electron tunneling in a hybrid single-electron transistor. Our measurements indicate that the effective area of a conduction channel is about one order of magnitude larger than predicted by theoretical calculations. With the second method, transmission electron microscopy, we demonstrate that variations in the barrier thickness are a plausible explanation for the larger effective area and an enhancement of higher order tunneling processes.",
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Aref, T, Averin, A, van Dijken, S, Ferring, A, Koberidze, M, Maisi, VF, Nguyend, HQ, Nieminen, RM, Pekola, JP & Yao, LD 2014, 'Characterization of aluminum oxide tunnel barriers by combining transport measurements and transmission electron microscopy imaging', Journal of Applied Physics, vol. 116, no. 7, 073702. https://doi.org/10.1063/1.4893473

Characterization of aluminum oxide tunnel barriers by combining transport measurements and transmission electron microscopy imaging. / Aref, T.; Averin, A.; van Dijken, S.; Ferring, A.; Koberidze, M.; Maisi, V.F.; Nguyend, H.Q.; Nieminen, R.M.; Pekola, J.P.; Yao, L.D.

In: Journal of Applied Physics, Vol. 116, No. 7, 073702, 2014.

Research output: Contribution to journalArticleScientificpeer-review

TY - JOUR

T1 - Characterization of aluminum oxide tunnel barriers by combining transport measurements and transmission electron microscopy imaging

AU - Aref, T.

AU - Averin, A.

AU - van Dijken, S.

AU - Ferring, A.

AU - Koberidze, M.

AU - Maisi, V.F.

AU - Nguyend, H.Q.

AU - Nieminen, R.M.

AU - Pekola, J.P.

AU - Yao, L.D.

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AB - We present two approaches for studying the uniformity of a tunnel barrier. The first approach is based on measuring single-electron and two-electron tunneling in a hybrid single-electron transistor. Our measurements indicate that the effective area of a conduction channel is about one order of magnitude larger than predicted by theoretical calculations. With the second method, transmission electron microscopy, we demonstrate that variations in the barrier thickness are a plausible explanation for the larger effective area and an enhancement of higher order tunneling processes.

KW - electron microscopy

KW - tunneling

KW - aluminium

KW - copper

KW - tunnel junctions

U2 - 10.1063/1.4893473

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M3 - Article

VL - 116

JO - Journal of Applied Physics

JF - Journal of Applied Physics

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