Characterization of bonded interface by HF etching method

Tommi Suni, Jyrki Kiihamäki, Kimmo Henttinen, Ilkka Suni, J. Mäkinen

    Research output: Chapter in Book/Report/Conference proceedingConference article in proceedingsScientific

    15 Citations (Scopus)


    The strength of the bonded interface in silicon-on-insulator (SOI) structures is usually measured with the crack opening method. However, the use of the crack opening method is rather difficult in cases when one or both of the bonded materials are fragile or already thinned, because in these cases the blade in-sertion leads to wafer breakage instead of crack formation. We have investigated the suitability of etching in hydrofluoric acid for bond quality evaluation.
    Original languageEnglish
    Title of host publicationSemiconductor Wafer Bonding VII: Science, Technology, and Applications
    PublisherElectrochemical Society ECS
    ISBN (Print)1-56677-402-0
    Publication statusPublished - 2003
    MoE publication typeB3 Non-refereed article in conference proceedings
    EventElectrochemical Society Spring Meeting 2003 - Paris, France
    Duration: 28 Apr 20035 May 2003

    Publication series

    SeriesECS Proceedings Volumes


    ConferenceElectrochemical Society Spring Meeting 2003


    Dive into the research topics of 'Characterization of bonded interface by HF etching method'. Together they form a unique fingerprint.

    Cite this