Characterization of bonded interface by HF etching method

Tommi Suni; Jyrki Kiihamäki; Kimmo Henttinen; Ilkka Suni; J. Mäkinen

Characterization of bonded interface by HF etching method

Tommi Suni, Jyrki Kiihamäki, Kimmo Henttinen, Ilkka Suni, J. Mäkinen

Okmetic Oyj

Research output: Chapter in Book/Report/Conference proceeding › Conference article in proceedings › Scientific

15 Citations (Scopus)

Abstract

The strength of the bonded interface in silicon-on-insulator (SOI) structures is usually measured with the crack opening method. However, the use of the crack opening method is rather difficult in cases when one or both of the bonded materials are fragile or already thinned, because in these cases the blade in-sertion leads to wafer breakage instead of crack formation. We have investigated the suitability of etching in hydrofluoric acid for bond quality evaluation.

Original language	English
Title of host publication	Semiconductor Wafer Bonding VII: Science, Technology, and Applications
Publisher	Electrochemical Society ECS
Pages	70-75
ISBN (Print)	1-56677-402-0
Publication status	Published - 2003
MoE publication type	B3 Non-refereed article in conference proceedings
Event	Electrochemical Society Spring Meeting 2003 - Paris, France Duration: 28 Apr 2003 → 5 May 2003

Publication series

Series	ECS Proceedings Volumes
Volume	2003-19
ISSN	2576-1579

Conference

Conference	Electrochemical Society Spring Meeting 2003
Country/Territory	France
City	Paris
Period	28/04/03 → 5/05/03

Access to Document

http://lib.tkk.fi/Diss/2006/isbn9513868524/article4.pdf

Cite this

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title = "Characterization of bonded interface by HF etching method",

abstract = "The strength of the bonded interface in silicon-on-insulator (SOI) structures is usually measured with the crack opening method. However, the use of the crack opening method is rather difficult in cases when one or both of the bonded materials are fragile or already thinned, because in these cases the blade in-sertion leads to wafer breakage instead of crack formation. We have investigated the suitability of etching in hydrofluoric acid for bond quality evaluation.",

author = "Tommi Suni and Jyrki Kiiham{\"a}ki and Kimmo Henttinen and Ilkka Suni and J. M{\"a}kinen",

note = "Project code: T3SU00071; Electrochemical Society Spring Meeting 2003 ; Conference date: 28-04-2003 Through 05-05-2003",

year = "2003",

language = "English",

isbn = "1-56677-402-0",

series = "ECS Proceedings Volumes",

publisher = "Electrochemical Society ECS",

pages = "70--75",

booktitle = "Semiconductor Wafer Bonding VII: Science, Technology, and Applications",

address = "United States",

}

Suni, T, Kiihamäki, J, Henttinen, K, Suni, I & Mäkinen, J 2003, Characterization of bonded interface by HF etching method. in Semiconductor Wafer Bonding VII: Science, Technology, and Applications. Electrochemical Society ECS, ECS Proceedings Volumes, vol. 2003-19, pp. 70-75, Electrochemical Society Spring Meeting 2003, Paris, France, 28/04/03. <http://lib.tkk.fi/Diss/2006/isbn9513868524/article4.pdf>

Characterization of bonded interface by HF etching method. / Suni, Tommi; Kiihamäki, Jyrki; Henttinen, Kimmo et al.
Semiconductor Wafer Bonding VII: Science, Technology, and Applications. Electrochemical Society ECS, 2003. p. 70-75 (ECS Proceedings Volumes, Vol. 2003-19).

Research output: Chapter in Book/Report/Conference proceeding › Conference article in proceedings › Scientific

TY - GEN

T1 - Characterization of bonded interface by HF etching method

AU - Suni, Tommi

AU - Kiihamäki, Jyrki

AU - Henttinen, Kimmo

AU - Suni, Ilkka

AU - Mäkinen, J.

N1 - Project code: T3SU00071

PY - 2003

Y1 - 2003

N2 - The strength of the bonded interface in silicon-on-insulator (SOI) structures is usually measured with the crack opening method. However, the use of the crack opening method is rather difficult in cases when one or both of the bonded materials are fragile or already thinned, because in these cases the blade in-sertion leads to wafer breakage instead of crack formation. We have investigated the suitability of etching in hydrofluoric acid for bond quality evaluation.

AB - The strength of the bonded interface in silicon-on-insulator (SOI) structures is usually measured with the crack opening method. However, the use of the crack opening method is rather difficult in cases when one or both of the bonded materials are fragile or already thinned, because in these cases the blade in-sertion leads to wafer breakage instead of crack formation. We have investigated the suitability of etching in hydrofluoric acid for bond quality evaluation.

M3 - Conference article in proceedings

SN - 1-56677-402-0

T3 - ECS Proceedings Volumes

SP - 70

EP - 75

BT - Semiconductor Wafer Bonding VII: Science, Technology, and Applications

PB - Electrochemical Society ECS

T2 - Electrochemical Society Spring Meeting 2003

Y2 - 28 April 2003 through 5 May 2003

ER -

Characterization of bonded interface by HF etching method

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