Characterization of bonded interface by HF etching method

Tommi Suni, Jyrki Kiihamäki, Kimmo Henttinen, Ilkka Suni, J. Mäkinen

Research output: Chapter in Book/Report/Conference proceedingConference article in proceedingsScientific

10 Citations (Scopus)

Abstract

The strength of the bonded interface in silicon-on-insulator (SOI) structures is usually measured with the crack opening method. However, the use of the crack opening method is rather difficult in cases when one or both of the bonded materials are fragile or already thinned, because in these cases the blade in-sertion leads to wafer breakage instead of crack formation. We have investigated the suitability of etching in hydrofluoric acid for bond quality evaluation.
Original languageEnglish
Title of host publicationSemiconductor Wafer Bonding VII: Science, Technology, and Applications
PublisherElectrochemical Society ECS
Pages70-75
ISBN (Print)1-56677-402-0
Publication statusPublished - 2003
MoE publication typeB3 Non-refereed article in conference proceedings
EventElectrochemical Society Spring Meeting 2003 - Paris, France
Duration: 28 Apr 20035 May 2003

Publication series

SeriesECS Proceedings Volumes
Volume2003-19
ISSN2576-1579

Conference

ConferenceElectrochemical Society Spring Meeting 2003
CountryFrance
CityParis
Period28/04/035/05/03

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    Suni, T., Kiihamäki, J., Henttinen, K., Suni, I., & Mäkinen, J. (2003). Characterization of bonded interface by HF etching method. In Semiconductor Wafer Bonding VII: Science, Technology, and Applications (pp. 70-75). Electrochemical Society ECS. ECS Proceedings Volumes, Vol.. 2003-19 http://lib.tkk.fi/Diss/2006/isbn9513868524/article4.pdf