Characterization of CMOS compatible RF MEMS switch at cryogenic temperatures

Research output: Chapter in Book/Report/Conference proceedingConference article in proceedingsScientificpeer-review

5 Citations (Scopus)

Abstract

In this paper, a CMOS compatible micromechanical RF switch is reported and its mechanical performance is studied on a wide temperature range from 295 K down to 20 K. A switch with a clamped-clamped structure showed plastic deformation during the cooling and finally failed during the warming cycle. On the contrary, a switch with a cantilever structure was functional throughout the test cycles.
Original languageEnglish
Title of host publicationProceedings
Subtitle of host publication4th International Conference on Solid-State Sensors, Actuators and Microsystems, TRANSDUCERS and EUROSENSORS 2007
PublisherIEEE Institute of Electrical and Electronic Engineers
Pages639-642
ISBN (Print)1-4244-0841-5, 1-4244-0842-3
DOIs
Publication statusPublished - 2007
MoE publication typeA4 Article in a conference publication
Event4th International Conference on Solid-State Sensors, Actuators and Microsystems, TRANSDUCERS and EUROSENSORS 2007 - Lyon, France
Duration: 24 Sep 2007 → …

Conference

Conference4th International Conference on Solid-State Sensors, Actuators and Microsystems, TRANSDUCERS and EUROSENSORS 2007
Abbreviated titleTRANSDUCERS and EUROSENSORS 2007
CountryFrance
CityLyon
Period24/09/07 → …

Keywords

  • CMOS
  • RF
  • RF-MEMS
  • RF switch
  • cryogenics

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  • Cite this

    Rantakari, P., & Vähä-Heikkilä, T. (2007). Characterization of CMOS compatible RF MEMS switch at cryogenic temperatures. In Proceedings: 4th International Conference on Solid-State Sensors, Actuators and Microsystems, TRANSDUCERS and EUROSENSORS 2007 (pp. 639-642). IEEE Institute of Electrical and Electronic Engineers. https://doi.org/10.1109/SENSOR.2007.4300211