Characterization of CMOS compatible RF MEMS switch at cryogenic temperatures

Pekka Rantakari; Tauno Vähä-Heikkilä

doi:10.1109/SENSOR.2007.4300211

Characterization of CMOS compatible RF MEMS switch at cryogenic temperatures

Research output: Chapter in Book/Report/Conference proceeding › Conference article in proceedings › Scientific › peer-review

5 Citations (Scopus)

Abstract

In this paper, a CMOS compatible micromechanical RF switch is reported and its mechanical performance is studied on a wide temperature range from 295 K down to 20 K. A switch with a clamped-clamped structure showed plastic deformation during the cooling and finally failed during the warming cycle. On the contrary, a switch with a cantilever structure was functional throughout the test cycles.

Original language	English
Title of host publication	14th International Conference on Solid-State Sensors, Actuators and Microsystems, TRANSDUCERS and EUROSENSORS 2007
Publisher	IEEE Institute of Electrical and Electronic Engineers
Pages	639-642
ISBN (Electronic)	978-1-4244-0842-9
ISBN (Print)	978-1-4244-0841-2
DOIs	https://doi.org/10.1109/SENSOR.2007.4300211
Publication status	Published - 2007
MoE publication type	A4 Article in a conference publication
Event	14th International Conference on Solid-State Sensors, Actuators and Microsystems, TRANSDUCERS '07 and EUROSENSORS XXI - Lyon, France Duration: 10 Jun 2007 → 14 Jun 2007

Conference

Conference	14th International Conference on Solid-State Sensors, Actuators and Microsystems, TRANSDUCERS '07 and EUROSENSORS XXI
Abbreviated title	TRANSDUCERS '07 and EUROSENSORS XXI
Country/Territory	France
City	Lyon
Period	10/06/07 → 14/06/07

Keywords

CMOS
RF
RF-MEMS
RF switch
cryogenics

Access to Document

10.1109/SENSOR.2007.4300211

Cite this

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title = "Characterization of CMOS compatible RF MEMS switch at cryogenic temperatures",

abstract = "In this paper, a CMOS compatible micromechanical RF switch is reported and its mechanical performance is studied on a wide temperature range from 295 K down to 20 K. A switch with a clamped-clamped structure showed plastic deformation during the cooling and finally failed during the warming cycle. On the contrary, a switch with a cantilever structure was functional throughout the test cycles.",

keywords = "CMOS, RF, RF-MEMS, RF switch, cryogenics",

author = "Pekka Rantakari and Tauno V{\"a}h{\"a}-Heikkil{\"a}",

year = "2007",

doi = "10.1109/SENSOR.2007.4300211",

language = "English",

isbn = "978-1-4244-0841-2",

pages = "639--642",

booktitle = "14th International Conference on Solid-State Sensors, Actuators and Microsystems, TRANSDUCERS and EUROSENSORS 2007",

publisher = "IEEE Institute of Electrical and Electronic Engineers",

address = "United States",

note = "14th International Conference on Solid-State Sensors, Actuators and Microsystems, TRANSDUCERS '07 and EUROSENSORS XXI, TRANSDUCERS '07 and EUROSENSORS XXI ; Conference date: 10-06-2007 Through 14-06-2007",

}

Rantakari, P & Vähä-Heikkilä, T 2007, Characterization of CMOS compatible RF MEMS switch at cryogenic temperatures. in 14th International Conference on Solid-State Sensors, Actuators and Microsystems, TRANSDUCERS and EUROSENSORS 2007. IEEE Institute of Electrical and Electronic Engineers, pp. 639-642, 14th International Conference on Solid-State Sensors, Actuators and Microsystems, TRANSDUCERS '07 and EUROSENSORS XXI, Lyon, France, 10/06/07. https://doi.org/10.1109/SENSOR.2007.4300211

Characterization of CMOS compatible RF MEMS switch at cryogenic temperatures. / Rantakari, Pekka ; Vähä-Heikkilä, Tauno.
14th International Conference on Solid-State Sensors, Actuators and Microsystems, TRANSDUCERS and EUROSENSORS 2007. IEEE Institute of Electrical and Electronic Engineers, 2007. p. 639-642.

Research output: Chapter in Book/Report/Conference proceeding › Conference article in proceedings › Scientific › peer-review

TY - GEN

T1 - Characterization of CMOS compatible RF MEMS switch at cryogenic temperatures

AU - Rantakari, Pekka

AU - Vähä-Heikkilä, Tauno

PY - 2007

Y1 - 2007

N2 - In this paper, a CMOS compatible micromechanical RF switch is reported and its mechanical performance is studied on a wide temperature range from 295 K down to 20 K. A switch with a clamped-clamped structure showed plastic deformation during the cooling and finally failed during the warming cycle. On the contrary, a switch with a cantilever structure was functional throughout the test cycles.

AB - In this paper, a CMOS compatible micromechanical RF switch is reported and its mechanical performance is studied on a wide temperature range from 295 K down to 20 K. A switch with a clamped-clamped structure showed plastic deformation during the cooling and finally failed during the warming cycle. On the contrary, a switch with a cantilever structure was functional throughout the test cycles.

KW - CMOS

KW - RF

KW - RF-MEMS

KW - RF switch

KW - cryogenics

U2 - 10.1109/SENSOR.2007.4300211

DO - 10.1109/SENSOR.2007.4300211

M3 - Conference article in proceedings

SN - 978-1-4244-0841-2

SP - 639

EP - 642

BT - 14th International Conference on Solid-State Sensors, Actuators and Microsystems, TRANSDUCERS and EUROSENSORS 2007

PB - IEEE Institute of Electrical and Electronic Engineers

T2 - 14th International Conference on Solid-State Sensors, Actuators and Microsystems, TRANSDUCERS '07 and EUROSENSORS XXI

Y2 - 10 June 2007 through 14 June 2007

ER -

Characterization of CMOS compatible RF MEMS switch at cryogenic temperatures

Abstract

Conference

Keywords

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