Characterization of doped strontium sulfide thin films by Secondary Ion Mass Spectrometry, Rutherford Backscattering spetrometry and X-ray Fluorescence Spectrometry

Sari Lehto, Pekka Soininen, Lauri Niinistö, Jari Likonen, Reijo Lappalainen

    Research output: Contribution to journalArticleScientificpeer-review

    6 Citations (Scopus)

    Abstract

    Secondary ion mass spectrometry (SIMS) and Rutherford backscattering spectrometry (RBS) were used for the characterization of SrS thin films doped with SiCl4 and Ce, and to establish the correlation of SIMS intensities with chlorine concentration. The film thicknesses were determined by RBS and X-ray fluorescence spectrometry. Two types of doped SrS samples were studied: SiCl4-codoped SrS : Ce thin films and SiCl4-doped SrS thin films. The SrS thin films were deposited on alumina-coated soda-lime glass substrates by the atomic layer epitaxy process. The quantification of SIMS intensities was performed by plotting the intensity ratio of the chlorine and sulfur against the chlorine concentration measured by RBS. Correlation factors for the calibration graphs were 0.997 for SrS : Ce, SiCl4 and 0.993 for SrS : SiCl4 in the chlorine concentration range 0–5.3 at.-%.
    Original languageEnglish
    Pages (from-to)1725-1729
    Number of pages5
    JournalThe Analyst
    Volume119
    Issue number8
    DOIs
    Publication statusPublished - 1994
    MoE publication typeA1 Journal article-refereed

    Fingerprint

    Secondary Ion Mass Spectrometry
    X-Ray Emission Spectrometry
    Strontium
    Chlorine
    Rutherford backscattering spectroscopy
    Sulfides
    Secondary ion mass spectrometry
    strontium
    X-ray fluorescence
    spectrometry
    mass spectrometry
    sulfide
    Spectrometry
    chlorine
    Thin films
    Spectrum Analysis
    ion
    Atomic layer epitaxy
    Aluminum Oxide
    Sulfur

    Cite this

    @article{8e4b1b58eef24b458995920e2922e075,
    title = "Characterization of doped strontium sulfide thin films by Secondary Ion Mass Spectrometry, Rutherford Backscattering spetrometry and X-ray Fluorescence Spectrometry",
    abstract = "Secondary ion mass spectrometry (SIMS) and Rutherford backscattering spectrometry (RBS) were used for the characterization of SrS thin films doped with SiCl4 and Ce, and to establish the correlation of SIMS intensities with chlorine concentration. The film thicknesses were determined by RBS and X-ray fluorescence spectrometry. Two types of doped SrS samples were studied: SiCl4-codoped SrS : Ce thin films and SiCl4-doped SrS thin films. The SrS thin films were deposited on alumina-coated soda-lime glass substrates by the atomic layer epitaxy process. The quantification of SIMS intensities was performed by plotting the intensity ratio of the chlorine and sulfur against the chlorine concentration measured by RBS. Correlation factors for the calibration graphs were 0.997 for SrS : Ce, SiCl4 and 0.993 for SrS : SiCl4 in the chlorine concentration range 0–5.3 at.-{\%}.",
    author = "Sari Lehto and Pekka Soininen and Lauri Niinist{\"o} and Jari Likonen and Reijo Lappalainen",
    year = "1994",
    doi = "10.1039/AN9941901725",
    language = "English",
    volume = "119",
    pages = "1725--1729",
    journal = "The Analyst",
    issn = "0003-2654",
    publisher = "Royal Society of Chemistry RSC",
    number = "8",

    }

    Characterization of doped strontium sulfide thin films by Secondary Ion Mass Spectrometry, Rutherford Backscattering spetrometry and X-ray Fluorescence Spectrometry. / Lehto, Sari; Soininen, Pekka; Niinistö, Lauri; Likonen, Jari; Lappalainen, Reijo.

    In: The Analyst, Vol. 119, No. 8, 1994, p. 1725-1729.

    Research output: Contribution to journalArticleScientificpeer-review

    TY - JOUR

    T1 - Characterization of doped strontium sulfide thin films by Secondary Ion Mass Spectrometry, Rutherford Backscattering spetrometry and X-ray Fluorescence Spectrometry

    AU - Lehto, Sari

    AU - Soininen, Pekka

    AU - Niinistö, Lauri

    AU - Likonen, Jari

    AU - Lappalainen, Reijo

    PY - 1994

    Y1 - 1994

    N2 - Secondary ion mass spectrometry (SIMS) and Rutherford backscattering spectrometry (RBS) were used for the characterization of SrS thin films doped with SiCl4 and Ce, and to establish the correlation of SIMS intensities with chlorine concentration. The film thicknesses were determined by RBS and X-ray fluorescence spectrometry. Two types of doped SrS samples were studied: SiCl4-codoped SrS : Ce thin films and SiCl4-doped SrS thin films. The SrS thin films were deposited on alumina-coated soda-lime glass substrates by the atomic layer epitaxy process. The quantification of SIMS intensities was performed by plotting the intensity ratio of the chlorine and sulfur against the chlorine concentration measured by RBS. Correlation factors for the calibration graphs were 0.997 for SrS : Ce, SiCl4 and 0.993 for SrS : SiCl4 in the chlorine concentration range 0–5.3 at.-%.

    AB - Secondary ion mass spectrometry (SIMS) and Rutherford backscattering spectrometry (RBS) were used for the characterization of SrS thin films doped with SiCl4 and Ce, and to establish the correlation of SIMS intensities with chlorine concentration. The film thicknesses were determined by RBS and X-ray fluorescence spectrometry. Two types of doped SrS samples were studied: SiCl4-codoped SrS : Ce thin films and SiCl4-doped SrS thin films. The SrS thin films were deposited on alumina-coated soda-lime glass substrates by the atomic layer epitaxy process. The quantification of SIMS intensities was performed by plotting the intensity ratio of the chlorine and sulfur against the chlorine concentration measured by RBS. Correlation factors for the calibration graphs were 0.997 for SrS : Ce, SiCl4 and 0.993 for SrS : SiCl4 in the chlorine concentration range 0–5.3 at.-%.

    U2 - 10.1039/AN9941901725

    DO - 10.1039/AN9941901725

    M3 - Article

    VL - 119

    SP - 1725

    EP - 1729

    JO - The Analyst

    JF - The Analyst

    SN - 0003-2654

    IS - 8

    ER -