Characterization of doped strontium sulfide thin films by Secondary Ion Mass Spectrometry, Rutherford Backscattering spetrometry and X-ray Fluorescence Spectrometry

Sari Lehto, Pekka Soininen, Lauri Niinistö, Jari Likonen, Reijo Lappalainen

Research output: Contribution to journalArticleScientificpeer-review

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Abstract

Secondary ion mass spectrometry (SIMS) and Rutherford backscattering spectrometry (RBS) were used for the characterization of SrS thin films doped with SiCl4 and Ce, and to establish the correlation of SIMS intensities with chlorine concentration. The film thicknesses were determined by RBS and X-ray fluorescence spectrometry. Two types of doped SrS samples were studied: SiCl4-codoped SrS : Ce thin films and SiCl4-doped SrS thin films. The SrS thin films were deposited on alumina-coated soda-lime glass substrates by the atomic layer epitaxy process. The quantification of SIMS intensities was performed by plotting the intensity ratio of the chlorine and sulfur against the chlorine concentration measured by RBS. Correlation factors for the calibration graphs were 0.997 for SrS : Ce, SiCl4 and 0.993 for SrS : SiCl4 in the chlorine concentration range 0–5.3 at.-%.
Original languageEnglish
Pages (from-to)1725-1729
Number of pages5
JournalThe Analyst
Volume119
Issue number8
DOIs
Publication statusPublished - 1994
MoE publication typeA1 Journal article-refereed

Fingerprint

Secondary Ion Mass Spectrometry
X-Ray Emission Spectrometry
Strontium
Chlorine
Rutherford backscattering spectroscopy
Sulfides
Secondary ion mass spectrometry
strontium
X-ray fluorescence
spectrometry
mass spectrometry
sulfide
Spectrometry
chlorine
Thin films
Spectrum Analysis
ion
Atomic layer epitaxy
Aluminum Oxide
Sulfur

Cite this

@article{8e4b1b58eef24b458995920e2922e075,
title = "Characterization of doped strontium sulfide thin films by Secondary Ion Mass Spectrometry, Rutherford Backscattering spetrometry and X-ray Fluorescence Spectrometry",
abstract = "Secondary ion mass spectrometry (SIMS) and Rutherford backscattering spectrometry (RBS) were used for the characterization of SrS thin films doped with SiCl4 and Ce, and to establish the correlation of SIMS intensities with chlorine concentration. The film thicknesses were determined by RBS and X-ray fluorescence spectrometry. Two types of doped SrS samples were studied: SiCl4-codoped SrS : Ce thin films and SiCl4-doped SrS thin films. The SrS thin films were deposited on alumina-coated soda-lime glass substrates by the atomic layer epitaxy process. The quantification of SIMS intensities was performed by plotting the intensity ratio of the chlorine and sulfur against the chlorine concentration measured by RBS. Correlation factors for the calibration graphs were 0.997 for SrS : Ce, SiCl4 and 0.993 for SrS : SiCl4 in the chlorine concentration range 0–5.3 at.-{\%}.",
author = "Sari Lehto and Pekka Soininen and Lauri Niinist{\"o} and Jari Likonen and Reijo Lappalainen",
year = "1994",
doi = "10.1039/AN9941901725",
language = "English",
volume = "119",
pages = "1725--1729",
journal = "The Analyst",
issn = "0003-2654",
publisher = "Royal Society of Chemistry RSC",
number = "8",

}

Characterization of doped strontium sulfide thin films by Secondary Ion Mass Spectrometry, Rutherford Backscattering spetrometry and X-ray Fluorescence Spectrometry. / Lehto, Sari; Soininen, Pekka; Niinistö, Lauri; Likonen, Jari; Lappalainen, Reijo.

In: The Analyst, Vol. 119, No. 8, 1994, p. 1725-1729.

Research output: Contribution to journalArticleScientificpeer-review

TY - JOUR

T1 - Characterization of doped strontium sulfide thin films by Secondary Ion Mass Spectrometry, Rutherford Backscattering spetrometry and X-ray Fluorescence Spectrometry

AU - Lehto, Sari

AU - Soininen, Pekka

AU - Niinistö, Lauri

AU - Likonen, Jari

AU - Lappalainen, Reijo

PY - 1994

Y1 - 1994

N2 - Secondary ion mass spectrometry (SIMS) and Rutherford backscattering spectrometry (RBS) were used for the characterization of SrS thin films doped with SiCl4 and Ce, and to establish the correlation of SIMS intensities with chlorine concentration. The film thicknesses were determined by RBS and X-ray fluorescence spectrometry. Two types of doped SrS samples were studied: SiCl4-codoped SrS : Ce thin films and SiCl4-doped SrS thin films. The SrS thin films were deposited on alumina-coated soda-lime glass substrates by the atomic layer epitaxy process. The quantification of SIMS intensities was performed by plotting the intensity ratio of the chlorine and sulfur against the chlorine concentration measured by RBS. Correlation factors for the calibration graphs were 0.997 for SrS : Ce, SiCl4 and 0.993 for SrS : SiCl4 in the chlorine concentration range 0–5.3 at.-%.

AB - Secondary ion mass spectrometry (SIMS) and Rutherford backscattering spectrometry (RBS) were used for the characterization of SrS thin films doped with SiCl4 and Ce, and to establish the correlation of SIMS intensities with chlorine concentration. The film thicknesses were determined by RBS and X-ray fluorescence spectrometry. Two types of doped SrS samples were studied: SiCl4-codoped SrS : Ce thin films and SiCl4-doped SrS thin films. The SrS thin films were deposited on alumina-coated soda-lime glass substrates by the atomic layer epitaxy process. The quantification of SIMS intensities was performed by plotting the intensity ratio of the chlorine and sulfur against the chlorine concentration measured by RBS. Correlation factors for the calibration graphs were 0.997 for SrS : Ce, SiCl4 and 0.993 for SrS : SiCl4 in the chlorine concentration range 0–5.3 at.-%.

U2 - 10.1039/AN9941901725

DO - 10.1039/AN9941901725

M3 - Article

VL - 119

SP - 1725

EP - 1729

JO - The Analyst

JF - The Analyst

SN - 0003-2654

IS - 8

ER -