Abstract
Segmentation of the anode-side of a M-π-n CdTe diode produces detectors with excellent spatial and energy resolution while maintaining an active area that extends to the detector edge. The CdTe pixel detectors reported have 250 ìm pitch, a detector thicknesses of 1 mm and are bonded to a spectroscopic readout ASIC. The results from an edgeless M-π-n CdTe detector with indium-diffused anodes, produced via diamond blade segmentation, are compared to those of a CdTe Schottky pixel detector with aluminium anodes and guard band produced using standard photolithographic techniques. The energy resolution at 59.54 keV was measured to be 1.4% and 1.3% for the standard and edgeless detector respectively. The spectroscopic performance of pixels located at the detector edges are discussed with reference to TCAD simulations and X-ray micro-beam measurements.
Original language | English |
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Pages (from-to) | 1536-1543 |
Number of pages | 7 |
Journal | IEEE Transactions on Nuclear Science |
Volume | 59 |
Issue number | 4 |
DOIs | |
Publication status | Published - 2012 |
MoE publication type | A1 Journal article-refereed |
Keywords
- CdTe
- edgeless detectors
- small pixel
- TCAD simulation
- X-ray detector