Characterization of edgeless CdTe detectors for use in hard X-Ray imaging applications

M.C. Veale, S.J. Bell, L.L. Jones, P. Seller, M.D. Wilson, R.C. Cernik, Juha Kalliopuska, Harri Pohjonen, H. Andersson, S. Nenonen, V. Kachkanov

    Research output: Contribution to journalArticleScientificpeer-review

    10 Citations (Scopus)

    Abstract

    Segmentation of the anode-side of a M-π-n CdTe diode produces detectors with excellent spatial and energy resolution while maintaining an active area that extends to the detector edge. The CdTe pixel detectors reported have 250 ìm pitch, a detector thicknesses of 1 mm and are bonded to a spectroscopic readout ASIC. The results from an edgeless M-π-n CdTe detector with indium-diffused anodes, produced via diamond blade segmentation, are compared to those of a CdTe Schottky pixel detector with aluminium anodes and guard band produced using standard photolithographic techniques. The energy resolution at 59.54 keV was measured to be 1.4% and 1.3% for the standard and edgeless detector respectively. The spectroscopic performance of pixels located at the detector edges are discussed with reference to TCAD simulations and X-ray micro-beam measurements.
    Original languageEnglish
    Pages (from-to)1536-1543
    Number of pages7
    JournalIEEE Transactions on Nuclear Science
    Volume59
    Issue number4
    DOIs
    Publication statusPublished - 2012
    MoE publication typeA1 Journal article-refereed

    Fingerprint

    Detectors
    Imaging techniques
    X rays
    detectors
    x rays
    Anodes
    anodes
    Pixels
    pixels
    application specific integrated circuits
    Application specific integrated circuits
    blades
    Indium
    indium
    readout
    Diamonds
    Diodes
    spatial resolution
    diamonds
    diodes

    Keywords

    • CdTe
    • edgeless detectors
    • small pixel
    • TCAD simulation
    • X-ray detector

    Cite this

    Veale, M. C., Bell, S. J., Jones, L. L., Seller, P., Wilson, M. D., Cernik, R. C., ... Kachkanov, V. (2012). Characterization of edgeless CdTe detectors for use in hard X-Ray imaging applications. IEEE Transactions on Nuclear Science, 59(4 ), 1536-1543. https://doi.org/10.1109/TNS.2012.2197025
    Veale, M.C. ; Bell, S.J. ; Jones, L.L. ; Seller, P. ; Wilson, M.D. ; Cernik, R.C. ; Kalliopuska, Juha ; Pohjonen, Harri ; Andersson, H. ; Nenonen, S. ; Kachkanov, V. / Characterization of edgeless CdTe detectors for use in hard X-Ray imaging applications. In: IEEE Transactions on Nuclear Science. 2012 ; Vol. 59, No. 4 . pp. 1536-1543.
    @article{5c15c477056a4b5bbbcc948072448d43,
    title = "Characterization of edgeless CdTe detectors for use in hard X-Ray imaging applications",
    abstract = "Segmentation of the anode-side of a M-π-n CdTe diode produces detectors with excellent spatial and energy resolution while maintaining an active area that extends to the detector edge. The CdTe pixel detectors reported have 250 {\`i}m pitch, a detector thicknesses of 1 mm and are bonded to a spectroscopic readout ASIC. The results from an edgeless M-π-n CdTe detector with indium-diffused anodes, produced via diamond blade segmentation, are compared to those of a CdTe Schottky pixel detector with aluminium anodes and guard band produced using standard photolithographic techniques. The energy resolution at 59.54 keV was measured to be 1.4{\%} and 1.3{\%} for the standard and edgeless detector respectively. The spectroscopic performance of pixels located at the detector edges are discussed with reference to TCAD simulations and X-ray micro-beam measurements.",
    keywords = "CdTe, edgeless detectors, small pixel, TCAD simulation, X-ray detector",
    author = "M.C. Veale and S.J. Bell and L.L. Jones and P. Seller and M.D. Wilson and R.C. Cernik and Juha Kalliopuska and Harri Pohjonen and H. Andersson and S. Nenonen and V. Kachkanov",
    year = "2012",
    doi = "10.1109/TNS.2012.2197025",
    language = "English",
    volume = "59",
    pages = "1536--1543",
    journal = "IEEE Transactions on Nuclear Science",
    issn = "0018-9499",
    publisher = "IEEE Institute of Electrical and Electronic Engineers",
    number = "4",

    }

    Veale, MC, Bell, SJ, Jones, LL, Seller, P, Wilson, MD, Cernik, RC, Kalliopuska, J, Pohjonen, H, Andersson, H, Nenonen, S & Kachkanov, V 2012, 'Characterization of edgeless CdTe detectors for use in hard X-Ray imaging applications', IEEE Transactions on Nuclear Science, vol. 59, no. 4 , pp. 1536-1543. https://doi.org/10.1109/TNS.2012.2197025

    Characterization of edgeless CdTe detectors for use in hard X-Ray imaging applications. / Veale, M.C.; Bell, S.J.; Jones, L.L.; Seller, P.; Wilson, M.D.; Cernik, R.C.; Kalliopuska, Juha; Pohjonen, Harri; Andersson, H.; Nenonen, S.; Kachkanov, V.

    In: IEEE Transactions on Nuclear Science, Vol. 59, No. 4 , 2012, p. 1536-1543.

    Research output: Contribution to journalArticleScientificpeer-review

    TY - JOUR

    T1 - Characterization of edgeless CdTe detectors for use in hard X-Ray imaging applications

    AU - Veale, M.C.

    AU - Bell, S.J.

    AU - Jones, L.L.

    AU - Seller, P.

    AU - Wilson, M.D.

    AU - Cernik, R.C.

    AU - Kalliopuska, Juha

    AU - Pohjonen, Harri

    AU - Andersson, H.

    AU - Nenonen, S.

    AU - Kachkanov, V.

    PY - 2012

    Y1 - 2012

    N2 - Segmentation of the anode-side of a M-π-n CdTe diode produces detectors with excellent spatial and energy resolution while maintaining an active area that extends to the detector edge. The CdTe pixel detectors reported have 250 ìm pitch, a detector thicknesses of 1 mm and are bonded to a spectroscopic readout ASIC. The results from an edgeless M-π-n CdTe detector with indium-diffused anodes, produced via diamond blade segmentation, are compared to those of a CdTe Schottky pixel detector with aluminium anodes and guard band produced using standard photolithographic techniques. The energy resolution at 59.54 keV was measured to be 1.4% and 1.3% for the standard and edgeless detector respectively. The spectroscopic performance of pixels located at the detector edges are discussed with reference to TCAD simulations and X-ray micro-beam measurements.

    AB - Segmentation of the anode-side of a M-π-n CdTe diode produces detectors with excellent spatial and energy resolution while maintaining an active area that extends to the detector edge. The CdTe pixel detectors reported have 250 ìm pitch, a detector thicknesses of 1 mm and are bonded to a spectroscopic readout ASIC. The results from an edgeless M-π-n CdTe detector with indium-diffused anodes, produced via diamond blade segmentation, are compared to those of a CdTe Schottky pixel detector with aluminium anodes and guard band produced using standard photolithographic techniques. The energy resolution at 59.54 keV was measured to be 1.4% and 1.3% for the standard and edgeless detector respectively. The spectroscopic performance of pixels located at the detector edges are discussed with reference to TCAD simulations and X-ray micro-beam measurements.

    KW - CdTe

    KW - edgeless detectors

    KW - small pixel

    KW - TCAD simulation

    KW - X-ray detector

    U2 - 10.1109/TNS.2012.2197025

    DO - 10.1109/TNS.2012.2197025

    M3 - Article

    VL - 59

    SP - 1536

    EP - 1543

    JO - IEEE Transactions on Nuclear Science

    JF - IEEE Transactions on Nuclear Science

    SN - 0018-9499

    IS - 4

    ER -