Characterization of edgeless CdTe detectors for use in hard X-Ray imaging applications

Matthew C. Veale, Steven J. Bell, Lawrence L. Jones, Paul Seller, Matthew D. Wilson, Robert C. Cernik, Juha Kalliopuska, Harri Pohjonen, Hans Andersson, Seppo Nenonen, Vyacheslav Kachkanov

    Research output: Contribution to journalArticleScientificpeer-review

    13 Citations (Scopus)


    Segmentation of the anode-side of a M-π-n CdTe diode produces detectors with excellent spatial and energy resolution while maintaining an active area that extends to the detector edge. The CdTe pixel detectors reported have 250 ìm pitch, a detector thicknesses of 1 mm and are bonded to a spectroscopic readout ASIC. The results from an edgeless M-π-n CdTe detector with indium-diffused anodes, produced via diamond blade segmentation, are compared to those of a CdTe Schottky pixel detector with aluminium anodes and guard band produced using standard photolithographic techniques. The energy resolution at 59.54 keV was measured to be 1.4% and 1.3% for the standard and edgeless detector respectively. The spectroscopic performance of pixels located at the detector edges are discussed with reference to TCAD simulations and X-ray micro-beam measurements.
    Original languageEnglish
    Pages (from-to)1536-1543
    JournalIEEE Transactions on Nuclear Science
    Issue number4
    Publication statusPublished - 2012
    MoE publication typeA1 Journal article-refereed


    • CdTe
    • edgeless detectors
    • small pixel
    • TCAD simulation
    • X-ray detector


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