Characterization of edgeless CdTe detectors for use in hard X-Ray imaging applications

M.C. Veale, S.J. Bell, L.L. Jones, P. Seller, M.D. Wilson, R.C. Cernik, Juha Kalliopuska, Harri Pohjonen, H. Andersson, S. Nenonen, V. Kachkanov

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    Segmentation of the anode-side of a M-π-n CdTe diode produces detectors with excellent spatial and energy resolution while maintaining an active area that extends to the detector edge. The CdTe pixel detectors reported have 250 ìm pitch, a detector thicknesses of 1 mm and are bonded to a spectroscopic readout ASIC. The results from an edgeless M-π-n CdTe detector with indium-diffused anodes, produced via diamond blade segmentation, are compared to those of a CdTe Schottky pixel detector with aluminium anodes and guard band produced using standard photolithographic techniques. The energy resolution at 59.54 keV was measured to be 1.4% and 1.3% for the standard and edgeless detector respectively. The spectroscopic performance of pixels located at the detector edges are discussed with reference to TCAD simulations and X-ray micro-beam measurements.
    Original languageEnglish
    Pages (from-to)1536-1543
    Number of pages7
    JournalIEEE Transactions on Nuclear Science
    Issue number4
    Publication statusPublished - 2012
    MoE publication typeA1 Journal article-refereed



    • CdTe
    • edgeless detectors
    • small pixel
    • TCAD simulation
    • X-ray detector

    Cite this

    Veale, M. C., Bell, S. J., Jones, L. L., Seller, P., Wilson, M. D., Cernik, R. C., Kalliopuska, J., Pohjonen, H., Andersson, H., Nenonen, S., & Kachkanov, V. (2012). Characterization of edgeless CdTe detectors for use in hard X-Ray imaging applications. IEEE Transactions on Nuclear Science, 59(4 ), 1536-1543.