Characterization of edgeless CdTe detectors for use in hard X-Ray imaging applications

M.C. Veale; S.J. Bell; L.L. Jones; P. Seller; M.D. Wilson; R.C. Cernik; Juha Kalliopuska; Harri Pohjonen; H. Andersson; S. Nenonen; V. Kachkanov

doi:10.1109/TNS.2012.2197025

Characterization of edgeless CdTe detectors for use in hard X-Ray imaging applications

M.C. Veale, S.J. Bell, L.L. Jones, P. Seller, M.D. Wilson, R.C. Cernik, Juha Kalliopuska, Harri Pohjonen, H. Andersson, S. Nenonen, V. Kachkanov

Research output: Contribution to journal › Article › Scientific › peer-review

13 Citations (Scopus)

Abstract

Segmentation of the anode-side of a M-π-n CdTe diode produces detectors with excellent spatial and energy resolution while maintaining an active area that extends to the detector edge. The CdTe pixel detectors reported have 250 ìm pitch, a detector thicknesses of 1 mm and are bonded to a spectroscopic readout ASIC. The results from an edgeless M-π-n CdTe detector with indium-diffused anodes, produced via diamond blade segmentation, are compared to those of a CdTe Schottky pixel detector with aluminium anodes and guard band produced using standard photolithographic techniques. The energy resolution at 59.54 keV was measured to be 1.4% and 1.3% for the standard and edgeless detector respectively. The spectroscopic performance of pixels located at the detector edges are discussed with reference to TCAD simulations and X-ray micro-beam measurements.

Original language	English
Pages (from-to)	1536-1543
Number of pages	7
Journal	IEEE Transactions on Nuclear Science
Volume	59
Issue number	4
DOIs	https://doi.org/10.1109/TNS.2012.2197025
Publication status	Published - 2012
MoE publication type	A1 Journal article-refereed

Keywords

CdTe
edgeless detectors
small pixel
TCAD simulation
X-ray detector

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10.1109/TNS.2012.2197025

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title = "Characterization of edgeless CdTe detectors for use in hard X-Ray imaging applications",

abstract = "Segmentation of the anode-side of a M-π-n CdTe diode produces detectors with excellent spatial and energy resolution while maintaining an active area that extends to the detector edge. The CdTe pixel detectors reported have 250 {\`i}m pitch, a detector thicknesses of 1 mm and are bonded to a spectroscopic readout ASIC. The results from an edgeless M-π-n CdTe detector with indium-diffused anodes, produced via diamond blade segmentation, are compared to those of a CdTe Schottky pixel detector with aluminium anodes and guard band produced using standard photolithographic techniques. The energy resolution at 59.54 keV was measured to be 1.4% and 1.3% for the standard and edgeless detector respectively. The spectroscopic performance of pixels located at the detector edges are discussed with reference to TCAD simulations and X-ray micro-beam measurements.",

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author = "M.C. Veale and S.J. Bell and L.L. Jones and P. Seller and M.D. Wilson and R.C. Cernik and Juha Kalliopuska and Harri Pohjonen and H. Andersson and S. Nenonen and V. Kachkanov",

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doi = "10.1109/TNS.2012.2197025",

language = "English",

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T1 - Characterization of edgeless CdTe detectors for use in hard X-Ray imaging applications

AU - Veale, M.C.

AU - Bell, S.J.

AU - Jones, L.L.

AU - Seller, P.

AU - Wilson, M.D.

AU - Cernik, R.C.

AU - Kalliopuska, Juha

AU - Pohjonen, Harri

AU - Andersson, H.

AU - Nenonen, S.

AU - Kachkanov, V.

PY - 2012

Y1 - 2012

N2 - Segmentation of the anode-side of a M-π-n CdTe diode produces detectors with excellent spatial and energy resolution while maintaining an active area that extends to the detector edge. The CdTe pixel detectors reported have 250 ìm pitch, a detector thicknesses of 1 mm and are bonded to a spectroscopic readout ASIC. The results from an edgeless M-π-n CdTe detector with indium-diffused anodes, produced via diamond blade segmentation, are compared to those of a CdTe Schottky pixel detector with aluminium anodes and guard band produced using standard photolithographic techniques. The energy resolution at 59.54 keV was measured to be 1.4% and 1.3% for the standard and edgeless detector respectively. The spectroscopic performance of pixels located at the detector edges are discussed with reference to TCAD simulations and X-ray micro-beam measurements.

AB - Segmentation of the anode-side of a M-π-n CdTe diode produces detectors with excellent spatial and energy resolution while maintaining an active area that extends to the detector edge. The CdTe pixel detectors reported have 250 ìm pitch, a detector thicknesses of 1 mm and are bonded to a spectroscopic readout ASIC. The results from an edgeless M-π-n CdTe detector with indium-diffused anodes, produced via diamond blade segmentation, are compared to those of a CdTe Schottky pixel detector with aluminium anodes and guard band produced using standard photolithographic techniques. The energy resolution at 59.54 keV was measured to be 1.4% and 1.3% for the standard and edgeless detector respectively. The spectroscopic performance of pixels located at the detector edges are discussed with reference to TCAD simulations and X-ray micro-beam measurements.

KW - CdTe

KW - edgeless detectors

KW - small pixel

KW - TCAD simulation

KW - X-ray detector

U2 - 10.1109/TNS.2012.2197025

DO - 10.1109/TNS.2012.2197025

M3 - Article

SN - 0018-9499

VL - 59

SP - 1536

EP - 1543

JO - IEEE Transactions on Nuclear Science

JF - IEEE Transactions on Nuclear Science

IS - 4

ER -

Characterization of edgeless CdTe detectors for use in hard X-Ray imaging applications

Abstract

Keywords

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