Characterization of edgeless CdTe detectors for use in hard X-Ray imaging applications

M.C. Veale, S.J. Bell, L.L. Jones, P. Seller, M.D. Wilson, R.C. Cernik, Juha Kalliopuska, Harri Pohjonen, H. Andersson, S. Nenonen, V. Kachkanov

Research output: Contribution to journalArticleScientificpeer-review

10 Citations (Scopus)

Abstract

Segmentation of the anode-side of a M-π-n CdTe diode produces detectors with excellent spatial and energy resolution while maintaining an active area that extends to the detector edge. The CdTe pixel detectors reported have 250 ìm pitch, a detector thicknesses of 1 mm and are bonded to a spectroscopic readout ASIC. The results from an edgeless M-π-n CdTe detector with indium-diffused anodes, produced via diamond blade segmentation, are compared to those of a CdTe Schottky pixel detector with aluminium anodes and guard band produced using standard photolithographic techniques. The energy resolution at 59.54 keV was measured to be 1.4% and 1.3% for the standard and edgeless detector respectively. The spectroscopic performance of pixels located at the detector edges are discussed with reference to TCAD simulations and X-ray micro-beam measurements.
Original languageEnglish
Pages (from-to)1536-1543
Number of pages7
JournalIEEE Transactions on Nuclear Science
Volume59
Issue number4
DOIs
Publication statusPublished - 2012
MoE publication typeA1 Journal article-refereed

Fingerprint

Detectors
Imaging techniques
X rays
detectors
x rays
Anodes
anodes
Pixels
pixels
application specific integrated circuits
Application specific integrated circuits
blades
Indium
indium
readout
Diamonds
Diodes
spatial resolution
diamonds
diodes

Keywords

  • CdTe
  • edgeless detectors
  • small pixel
  • TCAD simulation
  • X-ray detector

Cite this

Veale, M. C., Bell, S. J., Jones, L. L., Seller, P., Wilson, M. D., Cernik, R. C., ... Kachkanov, V. (2012). Characterization of edgeless CdTe detectors for use in hard X-Ray imaging applications. IEEE Transactions on Nuclear Science, 59(4 ), 1536-1543. https://doi.org/10.1109/TNS.2012.2197025
Veale, M.C. ; Bell, S.J. ; Jones, L.L. ; Seller, P. ; Wilson, M.D. ; Cernik, R.C. ; Kalliopuska, Juha ; Pohjonen, Harri ; Andersson, H. ; Nenonen, S. ; Kachkanov, V. / Characterization of edgeless CdTe detectors for use in hard X-Ray imaging applications. In: IEEE Transactions on Nuclear Science. 2012 ; Vol. 59, No. 4 . pp. 1536-1543.
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Veale, MC, Bell, SJ, Jones, LL, Seller, P, Wilson, MD, Cernik, RC, Kalliopuska, J, Pohjonen, H, Andersson, H, Nenonen, S & Kachkanov, V 2012, 'Characterization of edgeless CdTe detectors for use in hard X-Ray imaging applications', IEEE Transactions on Nuclear Science, vol. 59, no. 4 , pp. 1536-1543. https://doi.org/10.1109/TNS.2012.2197025

Characterization of edgeless CdTe detectors for use in hard X-Ray imaging applications. / Veale, M.C.; Bell, S.J.; Jones, L.L.; Seller, P.; Wilson, M.D.; Cernik, R.C.; Kalliopuska, Juha; Pohjonen, Harri; Andersson, H.; Nenonen, S.; Kachkanov, V.

In: IEEE Transactions on Nuclear Science, Vol. 59, No. 4 , 2012, p. 1536-1543.

Research output: Contribution to journalArticleScientificpeer-review

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AU - Veale, M.C.

AU - Bell, S.J.

AU - Jones, L.L.

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AU - Wilson, M.D.

AU - Cernik, R.C.

AU - Kalliopuska, Juha

AU - Pohjonen, Harri

AU - Andersson, H.

AU - Nenonen, S.

AU - Kachkanov, V.

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AB - Segmentation of the anode-side of a M-π-n CdTe diode produces detectors with excellent spatial and energy resolution while maintaining an active area that extends to the detector edge. The CdTe pixel detectors reported have 250 ìm pitch, a detector thicknesses of 1 mm and are bonded to a spectroscopic readout ASIC. The results from an edgeless M-π-n CdTe detector with indium-diffused anodes, produced via diamond blade segmentation, are compared to those of a CdTe Schottky pixel detector with aluminium anodes and guard band produced using standard photolithographic techniques. The energy resolution at 59.54 keV was measured to be 1.4% and 1.3% for the standard and edgeless detector respectively. The spectroscopic performance of pixels located at the detector edges are discussed with reference to TCAD simulations and X-ray micro-beam measurements.

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