Segmentation of the anode-side of a M-π-n CdTe diode produces detectors with excellent spatial and energy resolution while maintaining an active area that extends to the detector edge. The CdTe pixel detectors reported have 250 ìm pitch, a detector thicknesses of 1 mm and are bonded to a spectroscopic readout ASIC. The results from an edgeless M-π-n CdTe detector with indium-diffused anodes, produced via diamond blade segmentation, are compared to those of a CdTe Schottky pixel detector with aluminium anodes and guard band produced using standard photolithographic techniques. The energy resolution at 59.54 keV was measured to be 1.4% and 1.3% for the standard and edgeless detector respectively. The spectroscopic performance of pixels located at the detector edges are discussed with reference to TCAD simulations and X-ray micro-beam measurements.
- edgeless detectors
- small pixel
- TCAD simulation
- X-ray detector
Veale, M. C., Bell, S. J., Jones, L. L., Seller, P., Wilson, M. D., Cernik, R. C., Kalliopuska, J., Pohjonen, H., Andersson, H., Nenonen, S., & Kachkanov, V. (2012). Characterization of edgeless CdTe detectors for use in hard X-Ray imaging applications. IEEE Transactions on Nuclear Science, 59(4 ), 1536-1543. https://doi.org/10.1109/TNS.2012.2197025