Characterization of edgeless pixel detectors coupled to Medipix2 readout chip

Juha Kalliopuska (Corresponding Author), Lukas Tlustos, Simo Eränen, Tuula Virolainen

Research output: Contribution to journalArticleScientificpeer-review

14 Citations (Scopus)


VTT has developed a straightforward and fast process to fabricate four-side buttable (edgeless) microstrip and pixel detectors on 6 in. (150 mm) wafers. The process relies on advanced ion implantation to activate the edges of the detector instead of using polysilicon. The article characterizes 150 μm thick n-on-n edgeless pixel detector prototypes with a dead layer at the edge below 1 μm. Electrical and radiation response characterization of 1.4×1.4 cm2 n-on-n edgeless detectors has been done by coupling them to the Medipix2 readout chips. The distance of the detector's physical edge from the pixels was either 20 or 50 μm. The leakage current of flip-chip bonded edgeless Medipix2 detector assembles were measured to be ∼90 nA/cm2 and no breakdown was observed below 110 V. Radiation response characterization includes X-ray tube and radiation source responses. The characterization results show that the detector's response at the pixels close to the physical edge of the detector depend dramatically on the pixel-to-edge distance.
Original languageEnglish
Pages (from-to)S32-S36
JournalNuclear Instruments and Methods in Physics Research. Section A: Accelerators, Spectrometers, Detectors and Associated Equipment
Issue numberSuppl. 1
Publication statusPublished - 2011
MoE publication typeA1 Journal article-refereed
EventNIMA_4th International Conference on Imaging techniques in Subatomic Physics, Astrophysics, Medicine, Biology and Industry - Stockholm, Sweden
Duration: 1 Jun 2011 → …


  • Solid-state detector
  • Silicon detector
  • Four-side buttable detector
  • Edgeless detector
  • Active edge detector
  • Medipix2


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