Abstract
VTT has developed a straightforward and fast process to fabricate
four-side buttable (edgeless) microstrip and pixel detectors on 6 in. (150 mm)
wafers. The process relies on advanced ion implantation to activate the
edges of the detector instead of using polysilicon. The article
characterizes 150 μm thick n-on-n edgeless pixel detector prototypes with a dead layer at the edge below 1 μm. Electrical and radiation response characterization of 1.4×1.4 cm2
n-on-n edgeless detectors has been done by coupling them to the
Medipix2 readout chips. The distance of the detector's physical edge
from the pixels was either 20 or 50 μm. The leakage current of flip-chip bonded edgeless Medipix2 detector assembles were measured to be ∼90 nA/cm2 and no breakdown was observed below 110 V.
Radiation response characterization includes X-ray tube and radiation
source responses. The characterization results show that the detector's
response at the pixels close to the physical edge of the detector depend
dramatically on the pixel-to-edge distance.
Original language | English |
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Pages (from-to) | S32-S36 |
Journal | Nuclear Instruments and Methods in Physics Research. Section A: Accelerators, Spectrometers, Detectors and Associated Equipment |
Volume | 648 |
Issue number | Suppl. 1 |
DOIs | |
Publication status | Published - 2011 |
MoE publication type | A1 Journal article-refereed |
Event | NIMA_4th International Conference on Imaging techniques in Subatomic Physics, Astrophysics, Medicine, Biology and Industry - Stockholm, Sweden Duration: 1 Jun 2011 → … |
Keywords
- Solid-state detector
- Silicon detector
- Four-side buttable detector
- Edgeless detector
- Active edge detector
- Medipix2