Characterization of edgeless pixel detectors coupled to Medipix2 readout chip

Juha Kalliopuska (Corresponding Author), Lukas Tlustos, Simo Eränen, Tuula Virolainen

Research output: Contribution to journalArticleScientificpeer-review

11 Citations (Scopus)

Abstract

VTT has developed a straightforward and fast process to fabricate four-side buttable (edgeless) microstrip and pixel detectors on 6 in. (150 mm) wafers. The process relies on advanced ion implantation to activate the edges of the detector instead of using polysilicon. The article characterizes 150 μm thick n-on-n edgeless pixel detector prototypes with a dead layer at the edge below 1 μm. Electrical and radiation response characterization of 1.4×1.4 cm2 n-on-n edgeless detectors has been done by coupling them to the Medipix2 readout chips. The distance of the detector's physical edge from the pixels was either 20 or 50 μm. The leakage current of flip-chip bonded edgeless Medipix2 detector assembles were measured to be ∼90 nA/cm2 and no breakdown was observed below 110 V. Radiation response characterization includes X-ray tube and radiation source responses. The characterization results show that the detector's response at the pixels close to the physical edge of the detector depend dramatically on the pixel-to-edge distance.
Original languageEnglish
Pages (from-to)S32-S36
JournalNuclear Instruments and Methods in Physics Research. Section A: Accelerators, Spectrometers, Detectors and Associated Equipment
Volume648
Issue numberSuppl. 1
DOIs
Publication statusPublished - 2011
MoE publication typeA1 Journal article-refereed
EventNIMA_4th International Conference on Imaging techniques in Subatomic Physics, Astrophysics, Medicine, Biology and Industry - Stockholm, Sweden
Duration: 1 Jun 2011 → …

Fingerprint

readout
Pixels
pixels
chips
Detectors
detectors
Radiation
X ray tubes
radiation
radiation sources
Polysilicon
Ion implantation
Leakage currents
ion implantation
leakage
breakdown
prototypes
wafers
tubes
x rays

Keywords

  • Solid-state detector
  • Silicon detector
  • Four-side buttable detector
  • Edgeless detector
  • Active edge detector
  • Medipix2

Cite this

@article{16f7d268c51f41a1b516c2259626be9b,
title = "Characterization of edgeless pixel detectors coupled to Medipix2 readout chip",
abstract = "VTT has developed a straightforward and fast process to fabricate four-side buttable (edgeless) microstrip and pixel detectors on 6 in. (150 mm) wafers. The process relies on advanced ion implantation to activate the edges of the detector instead of using polysilicon. The article characterizes 150 μm thick n-on-n edgeless pixel detector prototypes with a dead layer at the edge below 1 μm. Electrical and radiation response characterization of 1.4×1.4 cm2 n-on-n edgeless detectors has been done by coupling them to the Medipix2 readout chips. The distance of the detector's physical edge from the pixels was either 20 or 50 μm. The leakage current of flip-chip bonded edgeless Medipix2 detector assembles were measured to be ∼90 nA/cm2 and no breakdown was observed below 110 V. Radiation response characterization includes X-ray tube and radiation source responses. The characterization results show that the detector's response at the pixels close to the physical edge of the detector depend dramatically on the pixel-to-edge distance.",
keywords = "Solid-state detector, Silicon detector, Four-side buttable detector, Edgeless detector, Active edge detector, Medipix2",
author = "Juha Kalliopuska and Lukas Tlustos and Simo Er{\"a}nen and Tuula Virolainen",
year = "2011",
doi = "10.1016/j.nima.2011.01.006",
language = "English",
volume = "648",
pages = "S32--S36",
journal = "Nuclear Instruments and Methods in Physics Research. Section A: Accelerators, Spectrometers, Detectors and Associated Equipment",
issn = "0168-9002",
publisher = "Elsevier",
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}

Characterization of edgeless pixel detectors coupled to Medipix2 readout chip. / Kalliopuska, Juha (Corresponding Author); Tlustos, Lukas; Eränen, Simo; Virolainen, Tuula.

In: Nuclear Instruments and Methods in Physics Research. Section A: Accelerators, Spectrometers, Detectors and Associated Equipment, Vol. 648, No. Suppl. 1, 2011, p. S32-S36.

Research output: Contribution to journalArticleScientificpeer-review

TY - JOUR

T1 - Characterization of edgeless pixel detectors coupled to Medipix2 readout chip

AU - Kalliopuska, Juha

AU - Tlustos, Lukas

AU - Eränen, Simo

AU - Virolainen, Tuula

PY - 2011

Y1 - 2011

N2 - VTT has developed a straightforward and fast process to fabricate four-side buttable (edgeless) microstrip and pixel detectors on 6 in. (150 mm) wafers. The process relies on advanced ion implantation to activate the edges of the detector instead of using polysilicon. The article characterizes 150 μm thick n-on-n edgeless pixel detector prototypes with a dead layer at the edge below 1 μm. Electrical and radiation response characterization of 1.4×1.4 cm2 n-on-n edgeless detectors has been done by coupling them to the Medipix2 readout chips. The distance of the detector's physical edge from the pixels was either 20 or 50 μm. The leakage current of flip-chip bonded edgeless Medipix2 detector assembles were measured to be ∼90 nA/cm2 and no breakdown was observed below 110 V. Radiation response characterization includes X-ray tube and radiation source responses. The characterization results show that the detector's response at the pixels close to the physical edge of the detector depend dramatically on the pixel-to-edge distance.

AB - VTT has developed a straightforward and fast process to fabricate four-side buttable (edgeless) microstrip and pixel detectors on 6 in. (150 mm) wafers. The process relies on advanced ion implantation to activate the edges of the detector instead of using polysilicon. The article characterizes 150 μm thick n-on-n edgeless pixel detector prototypes with a dead layer at the edge below 1 μm. Electrical and radiation response characterization of 1.4×1.4 cm2 n-on-n edgeless detectors has been done by coupling them to the Medipix2 readout chips. The distance of the detector's physical edge from the pixels was either 20 or 50 μm. The leakage current of flip-chip bonded edgeless Medipix2 detector assembles were measured to be ∼90 nA/cm2 and no breakdown was observed below 110 V. Radiation response characterization includes X-ray tube and radiation source responses. The characterization results show that the detector's response at the pixels close to the physical edge of the detector depend dramatically on the pixel-to-edge distance.

KW - Solid-state detector

KW - Silicon detector

KW - Four-side buttable detector

KW - Edgeless detector

KW - Active edge detector

KW - Medipix2

U2 - 10.1016/j.nima.2011.01.006

DO - 10.1016/j.nima.2011.01.006

M3 - Article

VL - 648

SP - S32-S36

JO - Nuclear Instruments and Methods in Physics Research. Section A: Accelerators, Spectrometers, Detectors and Associated Equipment

JF - Nuclear Instruments and Methods in Physics Research. Section A: Accelerators, Spectrometers, Detectors and Associated Equipment

SN - 0168-9002

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