Abstract
| Original language | English |
|---|---|
| Pages (from-to) | S32-S36 |
| Journal | Nuclear Instruments and Methods in Physics Research. Section A: Accelerators, Spectrometers, Detectors and Associated Equipment |
| Volume | 648 |
| Issue number | Suppl. 1 |
| DOIs | |
| Publication status | Published - 2011 |
| MoE publication type | A1 Journal article-refereed |
| Event | NIMA_4th International Conference on Imaging techniques in Subatomic Physics, Astrophysics, Medicine, Biology and Industry - Stockholm, Sweden Duration: 1 Jun 2011 → … |
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Keywords
- Solid-state detector
- Silicon detector
- Four-side buttable detector
- Edgeless detector
- Active edge detector
- Medipix2
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Characterization of edgeless pixel detectors coupled to Medipix2 readout chip. / Kalliopuska, Juha (Corresponding Author); Tlustos, Lukas; Eränen, Simo; Virolainen, Tuula.
In: Nuclear Instruments and Methods in Physics Research. Section A: Accelerators, Spectrometers, Detectors and Associated Equipment, Vol. 648, No. Suppl. 1, 2011, p. S32-S36.Research output: Contribution to journal › Article › Scientific › peer-review
TY - JOUR
T1 - Characterization of edgeless pixel detectors coupled to Medipix2 readout chip
AU - Kalliopuska, Juha
AU - Tlustos, Lukas
AU - Eränen, Simo
AU - Virolainen, Tuula
PY - 2011
Y1 - 2011
N2 - VTT has developed a straightforward and fast process to fabricate four-side buttable (edgeless) microstrip and pixel detectors on 6 in. (150 mm) wafers. The process relies on advanced ion implantation to activate the edges of the detector instead of using polysilicon. The article characterizes 150 μm thick n-on-n edgeless pixel detector prototypes with a dead layer at the edge below 1 μm. Electrical and radiation response characterization of 1.4×1.4 cm2 n-on-n edgeless detectors has been done by coupling them to the Medipix2 readout chips. The distance of the detector's physical edge from the pixels was either 20 or 50 μm. The leakage current of flip-chip bonded edgeless Medipix2 detector assembles were measured to be ∼90 nA/cm2 and no breakdown was observed below 110 V. Radiation response characterization includes X-ray tube and radiation source responses. The characterization results show that the detector's response at the pixels close to the physical edge of the detector depend dramatically on the pixel-to-edge distance.
AB - VTT has developed a straightforward and fast process to fabricate four-side buttable (edgeless) microstrip and pixel detectors on 6 in. (150 mm) wafers. The process relies on advanced ion implantation to activate the edges of the detector instead of using polysilicon. The article characterizes 150 μm thick n-on-n edgeless pixel detector prototypes with a dead layer at the edge below 1 μm. Electrical and radiation response characterization of 1.4×1.4 cm2 n-on-n edgeless detectors has been done by coupling them to the Medipix2 readout chips. The distance of the detector's physical edge from the pixels was either 20 or 50 μm. The leakage current of flip-chip bonded edgeless Medipix2 detector assembles were measured to be ∼90 nA/cm2 and no breakdown was observed below 110 V. Radiation response characterization includes X-ray tube and radiation source responses. The characterization results show that the detector's response at the pixels close to the physical edge of the detector depend dramatically on the pixel-to-edge distance.
KW - Solid-state detector
KW - Silicon detector
KW - Four-side buttable detector
KW - Edgeless detector
KW - Active edge detector
KW - Medipix2
U2 - 10.1016/j.nima.2011.01.006
DO - 10.1016/j.nima.2011.01.006
M3 - Article
VL - 648
SP - S32-S36
JO - Nuclear Instruments and Methods in Physics Research. Section A: Accelerators, Spectrometers, Detectors and Associated Equipment
JF - Nuclear Instruments and Methods in Physics Research. Section A: Accelerators, Spectrometers, Detectors and Associated Equipment
SN - 0168-9002
IS - Suppl. 1
ER -