Characterization of edgeless pixel detectors coupled to Medipix2 readout chip

Juha Kalliopuska; Lukas Tlustos; Simo Eränen; Tuula Virolainen

doi:10.1016/j.nima.2011.01.006

Characterization of edgeless pixel detectors coupled to Medipix2 readout chip

Juha Kalliopuska (Corresponding Author), Lukas Tlustos, Simo Eränen, Tuula Virolainen

VTT Technical Research Centre of Finland

Research output: Contribution to journal › Article › Scientific › peer-review

12 Citations (Scopus)

Abstract

VTT has developed a straightforward and fast process to fabricate four-side buttable (edgeless) microstrip and pixel detectors on 6 in. (150 mm) wafers. The process relies on advanced ion implantation to activate the edges of the detector instead of using polysilicon. The article characterizes 150 μm thick n-on-n edgeless pixel detector prototypes with a dead layer at the edge below 1 μm. Electrical and radiation response characterization of 1.4×1.4 cm² n-on-n edgeless detectors has been done by coupling them to the Medipix2 readout chips. The distance of the detector's physical edge from the pixels was either 20 or 50 μm. The leakage current of flip-chip bonded edgeless Medipix2 detector assembles were measured to be ∼90 nA/cm² and no breakdown was observed below 110 V. Radiation response characterization includes X-ray tube and radiation source responses. The characterization results show that the detector's response at the pixels close to the physical edge of the detector depend dramatically on the pixel-to-edge distance.

Original language	English
Pages (from-to)	S32-S36
Journal	Nuclear Instruments and Methods in Physics Research. Section A: Accelerators, Spectrometers, Detectors and Associated Equipment
Volume	648
Issue number	Suppl. 1
DOIs	https://doi.org/10.1016/j.nima.2011.01.006
Publication status	Published - 2011
MoE publication type	A1 Journal article-refereed
Event	NIMA_4th International Conference on Imaging techniques in Subatomic Physics, Astrophysics, Medicine, Biology and Industry - Stockholm, Sweden Duration: 1 Jun 2011 → …

Keywords

Solid-state detector
Silicon detector
Four-side buttable detector
Edgeless detector
Active edge detector
Medipix2

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@article{16f7d268c51f41a1b516c2259626be9b,

title = "Characterization of edgeless pixel detectors coupled to Medipix2 readout chip",

abstract = "VTT has developed a straightforward and fast process to fabricate four-side buttable (edgeless) microstrip and pixel detectors on 6 in. (150 mm) wafers. The process relies on advanced ion implantation to activate the edges of the detector instead of using polysilicon. The article characterizes 150 μm thick n-on-n edgeless pixel detector prototypes with a dead layer at the edge below 1 μm. Electrical and radiation response characterization of 1.4×1.4 cm2 n-on-n edgeless detectors has been done by coupling them to the Medipix2 readout chips. The distance of the detector's physical edge from the pixels was either 20 or 50 μm. The leakage current of flip-chip bonded edgeless Medipix2 detector assembles were measured to be ∼90 nA/cm2 and no breakdown was observed below 110 V. Radiation response characterization includes X-ray tube and radiation source responses. The characterization results show that the detector's response at the pixels close to the physical edge of the detector depend dramatically on the pixel-to-edge distance.",

keywords = "Solid-state detector, Silicon detector, Four-side buttable detector, Edgeless detector, Active edge detector, Medipix2",

author = "Juha Kalliopuska and Lukas Tlustos and Simo Er{\"a}nen and Tuula Virolainen",

year = "2011",

doi = "10.1016/j.nima.2011.01.006",

language = "English",

volume = "648",

pages = "S32--S36",

journal = "Nuclear Instruments and Methods in Physics Research. Section A: Accelerators, Spectrometers, Detectors and Associated Equipment",

issn = "0168-9002",

publisher = "Elsevier",

number = "Suppl. 1",

note = "NIMA_4th International Conference on Imaging techniques in Subatomic Physics, Astrophysics, Medicine, Biology and Industry, NIMA ; Conference date: 01-06-2011",

}

Characterization of edgeless pixel detectors coupled to Medipix2 readout chip. / Kalliopuska, Juha (Corresponding Author); Tlustos, Lukas; Eränen, Simo; Virolainen, Tuula.

In: Nuclear Instruments and Methods in Physics Research. Section A: Accelerators, Spectrometers, Detectors and Associated Equipment, Vol. 648, No. Suppl. 1, 2011, p. S32-S36.

Research output: Contribution to journal › Article › Scientific › peer-review

TY - JOUR

T1 - Characterization of edgeless pixel detectors coupled to Medipix2 readout chip

AU - Kalliopuska, Juha

AU - Tlustos, Lukas

AU - Eränen, Simo

AU - Virolainen, Tuula

PY - 2011

Y1 - 2011

N2 - VTT has developed a straightforward and fast process to fabricate four-side buttable (edgeless) microstrip and pixel detectors on 6 in. (150 mm) wafers. The process relies on advanced ion implantation to activate the edges of the detector instead of using polysilicon. The article characterizes 150 μm thick n-on-n edgeless pixel detector prototypes with a dead layer at the edge below 1 μm. Electrical and radiation response characterization of 1.4×1.4 cm2 n-on-n edgeless detectors has been done by coupling them to the Medipix2 readout chips. The distance of the detector's physical edge from the pixels was either 20 or 50 μm. The leakage current of flip-chip bonded edgeless Medipix2 detector assembles were measured to be ∼90 nA/cm2 and no breakdown was observed below 110 V. Radiation response characterization includes X-ray tube and radiation source responses. The characterization results show that the detector's response at the pixels close to the physical edge of the detector depend dramatically on the pixel-to-edge distance.

AB - VTT has developed a straightforward and fast process to fabricate four-side buttable (edgeless) microstrip and pixel detectors on 6 in. (150 mm) wafers. The process relies on advanced ion implantation to activate the edges of the detector instead of using polysilicon. The article characterizes 150 μm thick n-on-n edgeless pixel detector prototypes with a dead layer at the edge below 1 μm. Electrical and radiation response characterization of 1.4×1.4 cm2 n-on-n edgeless detectors has been done by coupling them to the Medipix2 readout chips. The distance of the detector's physical edge from the pixels was either 20 or 50 μm. The leakage current of flip-chip bonded edgeless Medipix2 detector assembles were measured to be ∼90 nA/cm2 and no breakdown was observed below 110 V. Radiation response characterization includes X-ray tube and radiation source responses. The characterization results show that the detector's response at the pixels close to the physical edge of the detector depend dramatically on the pixel-to-edge distance.

KW - Solid-state detector

KW - Silicon detector

KW - Four-side buttable detector

KW - Edgeless detector

KW - Active edge detector

KW - Medipix2

U2 - 10.1016/j.nima.2011.01.006

DO - 10.1016/j.nima.2011.01.006

M3 - Article

VL - 648

SP - S32-S36

JO - Nuclear Instruments and Methods in Physics Research. Section A: Accelerators, Spectrometers, Detectors and Associated Equipment

JF - Nuclear Instruments and Methods in Physics Research. Section A: Accelerators, Spectrometers, Detectors and Associated Equipment

SN - 0168-9002

IS - Suppl. 1

T2 - NIMA_4th International Conference on Imaging techniques in Subatomic Physics, Astrophysics, Medicine, Biology and Industry

Y2 - 1 June 2011

ER -