Abstract
| Original language | English |
|---|---|
| Pages (from-to) | 177-190 |
| Number of pages | 14 |
| Journal | Solar Energy Materials and Solar Cells |
| Volume | 44 |
| Issue number | 2 |
| DOIs | |
| Publication status | Published - 1996 |
| MoE publication type | A1 Journal article-refereed |
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Keywords
- solar cells
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Characterization of etching procedure in preparation of CdTe solar cells. / Sarlund, Juha; Ritala, Mikko (Corresponding Author); Leskelä, Markku; Siponmaa, Eija; Zilliacus, Riitta.
In: Solar Energy Materials and Solar Cells, Vol. 44, No. 2, 1996, p. 177-190.Research output: Contribution to journal › Article › Scientific › peer-review
TY - JOUR
T1 - Characterization of etching procedure in preparation of CdTe solar cells
AU - Sarlund, Juha
AU - Ritala, Mikko
AU - Leskelä, Markku
AU - Siponmaa, Eija
AU - Zilliacus, Riitta
PY - 1996
Y1 - 1996
N2 - An etching procedure for forming a low resistance contact to polycrystalline CdTe thin films in CdS/CdTe solar cells was studied. The etching solution used was a mixture of HNO3, H3PO4 and H20. X-ray diffraction (XRD), secondary ion mass spectrometry (SIMS) and electric measurements revealed that the etching results in a formation of crystalline tellurium on the film surface, thereby increasing substantially the conductivity of the surface layer. The total process was found to consist of three steps: (i) immediately after an immersion into the etching solution there was a certain induction period with no discernible changes, (ii) a subsequent reaction step during which poorly crystallized elemental tellurium was formed, gaseous byproducts liberated and the surface changed its colour, and (iii) after taking out of the etching solution the tellurium crystallized causing a strong decrease in the sheet resistance. In situ XRD and electric measurements were carried out to follow the third step. The chemical aspects of the three steps as well as their contributions to the reproducibility and control of the overall etching procedure have been considered.
AB - An etching procedure for forming a low resistance contact to polycrystalline CdTe thin films in CdS/CdTe solar cells was studied. The etching solution used was a mixture of HNO3, H3PO4 and H20. X-ray diffraction (XRD), secondary ion mass spectrometry (SIMS) and electric measurements revealed that the etching results in a formation of crystalline tellurium on the film surface, thereby increasing substantially the conductivity of the surface layer. The total process was found to consist of three steps: (i) immediately after an immersion into the etching solution there was a certain induction period with no discernible changes, (ii) a subsequent reaction step during which poorly crystallized elemental tellurium was formed, gaseous byproducts liberated and the surface changed its colour, and (iii) after taking out of the etching solution the tellurium crystallized causing a strong decrease in the sheet resistance. In situ XRD and electric measurements were carried out to follow the third step. The chemical aspects of the three steps as well as their contributions to the reproducibility and control of the overall etching procedure have been considered.
KW - solar cells
U2 - 10.1016/0927-0248(96)00053-0
DO - 10.1016/0927-0248(96)00053-0
M3 - Article
VL - 44
SP - 177
EP - 190
JO - Solar Energy Materials and Solar Cells
JF - Solar Energy Materials and Solar Cells
SN - 0927-0248
IS - 2
ER -