Single-crystalline silicon thin film on glass (cSOG) has been prepared using an "ion-cutting" based "layer-transfer" technique. Low-temperature processed thin-film transistors, fabricated both on cSOG and metal-induced laterally crystallized polycrystalline silicon, have been characterized and compared. The cSOG-based transistors performed comparatively better, exhibiting a significantly higher electron field-effect mobility (/spl sim/430 cm/sup 2//Vs), a steeper subthreshold slope and a lower leakage current that was also relatively insensitive to gate bias.
- ion cutting
- layer transfer
- thin-film transistor
Shi, X., Henttinen, K., Suni, T., Suni, I., Lau, S. S., & Wong, M. (2003). Characterization of low-temperature processed single-crystalline silicon thin-film transistor on glass. IEEE Electron Device Letters, 24(9), 574-576. https://doi.org/10.1109/LED.2003.815945