Characterization of low-temperature processed single-crystalline silicon thin-film transistor on glass

Tommi Suni, Kimmo Henttinen, Ilkka Suni, Xuejie Shi, Man Wong, S.S Lau

Research output: Contribution to journalArticleScientificpeer-review

13 Citations (Scopus)

Abstract

Single-crystalline silicon thin film on glass (cSOG) has been prepared using an "ion-cutting" based "layer-transfer" technique. Low-temperature processed thin-film transistors, fabricated both on cSOG and metal-induced laterally crystallized polycrystalline silicon, have been characterized and compared. The cSOG-based transistors performed comparatively better, exhibiting a significantly higher electron field-effect mobility (/spl sim/430 cm/sup 2//Vs), a steeper subthreshold slope and a lower leakage current that was also relatively insensitive to gate bias.
Original languageEnglish
Pages (from-to)574-576
Number of pages3
JournalIEEE Electron Device Letters
Volume24
Issue number9
DOIs
Publication statusPublished - 2003
MoE publication typeA1 Journal article-refereed

Fingerprint

Silicon
Thin film transistors
Crystalline materials
Glass
Thin films
Polysilicon
Leakage currents
Temperature
Transistors
Metals
Ions
Electrons

Keywords

  • Glass
  • ion cutting
  • layer transfer
  • thin-film transistor

Cite this

Suni, Tommi ; Henttinen, Kimmo ; Suni, Ilkka ; Shi, Xuejie ; Wong, Man ; Lau, S.S. / Characterization of low-temperature processed single-crystalline silicon thin-film transistor on glass. In: IEEE Electron Device Letters. 2003 ; Vol. 24, No. 9. pp. 574-576.
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Characterization of low-temperature processed single-crystalline silicon thin-film transistor on glass. / Suni, Tommi; Henttinen, Kimmo; Suni, Ilkka; Shi, Xuejie; Wong, Man; Lau, S.S.

In: IEEE Electron Device Letters, Vol. 24, No. 9, 2003, p. 574-576.

Research output: Contribution to journalArticleScientificpeer-review

TY - JOUR

T1 - Characterization of low-temperature processed single-crystalline silicon thin-film transistor on glass

AU - Suni, Tommi

AU - Henttinen, Kimmo

AU - Suni, Ilkka

AU - Shi, Xuejie

AU - Wong, Man

AU - Lau, S.S

PY - 2003

Y1 - 2003

N2 - Single-crystalline silicon thin film on glass (cSOG) has been prepared using an "ion-cutting" based "layer-transfer" technique. Low-temperature processed thin-film transistors, fabricated both on cSOG and metal-induced laterally crystallized polycrystalline silicon, have been characterized and compared. The cSOG-based transistors performed comparatively better, exhibiting a significantly higher electron field-effect mobility (/spl sim/430 cm/sup 2//Vs), a steeper subthreshold slope and a lower leakage current that was also relatively insensitive to gate bias.

AB - Single-crystalline silicon thin film on glass (cSOG) has been prepared using an "ion-cutting" based "layer-transfer" technique. Low-temperature processed thin-film transistors, fabricated both on cSOG and metal-induced laterally crystallized polycrystalline silicon, have been characterized and compared. The cSOG-based transistors performed comparatively better, exhibiting a significantly higher electron field-effect mobility (/spl sim/430 cm/sup 2//Vs), a steeper subthreshold slope and a lower leakage current that was also relatively insensitive to gate bias.

KW - Glass

KW - ion cutting

KW - layer transfer

KW - thin-film transistor

U2 - 10.1109/LED.2003.815945

DO - 10.1109/LED.2003.815945

M3 - Article

VL - 24

SP - 574

EP - 576

JO - IEEE Electron Device Letters

JF - IEEE Electron Device Letters

SN - 0741-3106

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