Characterization of low-temperature processed single-crystalline silicon thin-film transistor on glass

Xuejie Shi, Kimmo Henttinen, Tommi Suni, Ilkka Suni, S.S Lau, Man Wong

Research output: Contribution to journalArticleScientificpeer-review

14 Citations (Scopus)

Abstract

Single-crystalline silicon thin film on glass (cSOG) has been prepared using an "ion-cutting" based "layer-transfer" technique. Low-temperature processed thin-film transistors, fabricated both on cSOG and metal-induced laterally crystallized polycrystalline silicon, have been characterized and compared. The cSOG-based transistors performed comparatively better, exhibiting a significantly higher electron field-effect mobility (/spl sim/430 cm/sup 2//Vs), a steeper subthreshold slope and a lower leakage current that was also relatively insensitive to gate bias.
Original languageEnglish
Pages (from-to)574-576
JournalIEEE Electron Device Letters
Volume24
Issue number9
DOIs
Publication statusPublished - 2003
MoE publication typeA1 Journal article-refereed

Keywords

  • Glass
  • ion cutting
  • layer transfer
  • thin-film transistor

Fingerprint Dive into the research topics of 'Characterization of low-temperature processed single-crystalline silicon thin-film transistor on glass'. Together they form a unique fingerprint.

Cite this