Characterization of optical properties of nanocrystalline doped PZT thin films

Jyrki Lappalainen (Corresponding Author), Jussi Hiltunen, Vilho Lantto

    Research output: Contribution to journalArticleScientificpeer-review

    18 Citations (Scopus)

    Abstract

    High optical transmittance and refractive index together with strong electro-optic Kerr effect of the ferroelectric lead-zirconate-titanate (PZT) films can be utilized in various active optical applications like optical shutters, modulators and waveguides. Pulsed laser deposition (PLD) with XeCl-excimer laser with a wavelength of 308 nm and Nd-modified PZT target were used for the optical thin film fabrication. The films were deposited on single-crystal MgO (1 0 0) substrates. The crystal structure and grain size distribution were studied using XRD technique. The optical transmission spectra of the films were measured at UV–vis–NIR wavelengths, which was utilized to obtain the refraction index n dispersion, extinction coefficient k, and the value of the band gap Eg. Electro-optic coefficients were determined by ellipsometric technique. In the case of polycrystalline films, mean grain size was between 9 and 20 nm. At the wavelength of 633 nm the refractive index varied from 2.28 to 2.46 as a function of mean grain size. Also, the electro-optic coefficient showed dependence on grain size distribution increasing from 0.37 × 10−18 to 2.49 × 10−18 m2/V2 with increasing mean grain size.
    Original languageEnglish
    Pages (from-to)2273 - 2276
    Number of pages4
    JournalJournal of the European Ceramic Society
    Volume25
    Issue number12
    DOIs
    Publication statusPublished - 2005
    MoE publication typeA1 Journal article-refereed

    Keywords

    • films
    • grain size
    • optical properties
    • PZT
    • lead-zirconate-titanate
    • electro-optics

    Fingerprint

    Dive into the research topics of 'Characterization of optical properties of nanocrystalline doped PZT thin films'. Together they form a unique fingerprint.

    Cite this