Characterization of reacted ohmic contacts to GaAs

Hannu Kattelus; Jawahar Tandon; Marc Nicolet

doi:10.1016/0038-1101(86)90011-0

Characterization of reacted ohmic contacts to GaAs

Hannu Kattelus, Jawahar Tandon, Marc Nicolet

VTT Technical Research Centre of Finland

California Institute of Technology

Research output: Contribution to journal › Article › Scientific › peer-review

19 Citations (Scopus)

Abstract

In the calculation of the true value of specific resistivity of reacted ohmic contacts, a modification in the conductivity of the semiconductor that may occur below the contact must be considered. Contacts to GaAs are discussed. A substantial decrease in the sheet resistance of p-type GaAs is measured for Pt-reacted contacts in which a single thin layer of Mg is interposed. It is pointed out that this lowering, which is attributed to the doping action of Mg, if not taken into account, can lead to serious errors in the estimation of specific contact resistivity.

Original language	English
Pages (from-to)	903-905
Journal	Solid-State Electronics
Volume	29
Issue number	9
DOIs	https://doi.org/10.1016/0038-1101(86)90011-0
Publication status	Published - 1986
MoE publication type	A1 Journal article-refereed

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10.1016/0038-1101(86)90011-0

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title = "Characterization of reacted ohmic contacts to GaAs",

abstract = "In the calculation of the true value of specific resistivity of reacted ohmic contacts, a modification in the conductivity of the semiconductor that may occur below the contact must be considered. Contacts to GaAs are discussed. A substantial decrease in the sheet resistance of p-type GaAs is measured for Pt-reacted contacts in which a single thin layer of Mg is interposed. It is pointed out that this lowering, which is attributed to the doping action of Mg, if not taken into account, can lead to serious errors in the estimation of specific contact resistivity.",

author = "Hannu Kattelus and Jawahar Tandon and Marc Nicolet",

year = "1986",

doi = "10.1016/0038-1101(86)90011-0",

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T1 - Characterization of reacted ohmic contacts to GaAs

AU - Kattelus, Hannu

AU - Tandon, Jawahar

AU - Nicolet, Marc

PY - 1986

Y1 - 1986

N2 - In the calculation of the true value of specific resistivity of reacted ohmic contacts, a modification in the conductivity of the semiconductor that may occur below the contact must be considered. Contacts to GaAs are discussed. A substantial decrease in the sheet resistance of p-type GaAs is measured for Pt-reacted contacts in which a single thin layer of Mg is interposed. It is pointed out that this lowering, which is attributed to the doping action of Mg, if not taken into account, can lead to serious errors in the estimation of specific contact resistivity.

AB - In the calculation of the true value of specific resistivity of reacted ohmic contacts, a modification in the conductivity of the semiconductor that may occur below the contact must be considered. Contacts to GaAs are discussed. A substantial decrease in the sheet resistance of p-type GaAs is measured for Pt-reacted contacts in which a single thin layer of Mg is interposed. It is pointed out that this lowering, which is attributed to the doping action of Mg, if not taken into account, can lead to serious errors in the estimation of specific contact resistivity.

U2 - 10.1016/0038-1101(86)90011-0

DO - 10.1016/0038-1101(86)90011-0

M3 - Article

SN - 0038-1101

VL - 29

SP - 903

EP - 905

JO - Solid-State Electronics

JF - Solid-State Electronics

IS - 9

ER -

Characterization of reacted ohmic contacts to GaAs

Abstract

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