Characterization of reacted ohmic contacts to GaAs

Hannu Kattelus, Jawahar Tandon, Marc Nicolet

Research output: Contribution to journalArticleScientificpeer-review

19 Citations (Scopus)


In the calculation of the true value of specific resistivity of reacted ohmic contacts, a modification in the conductivity of the semiconductor that may occur below the contact must be considered. Contacts to GaAs are discussed. A substantial decrease in the sheet resistance of p-type GaAs is measured for Pt-reacted contacts in which a single thin layer of Mg is interposed. It is pointed out that this lowering, which is attributed to the doping action of Mg, if not taken into account, can lead to serious errors in the estimation of specific contact resistivity.
Original languageEnglish
Pages (from-to)903-905
JournalSolid-State Electronics
Issue number9
Publication statusPublished - 1986
MoE publication typeA1 Journal article-refereed


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