Characterization of reacted ohmic contacts to GaAs

Hannu Kattelus, Jawahar Tandon, Marc Nicolet

Research output: Contribution to journalArticleScientificpeer-review

13 Citations (Scopus)

Abstract

In the calculation of the true value of specific resistivity of reacted ohmic contacts, a modification in the conductivity of the semiconductor that may occur below the contact must be considered. Contacts to GaAs are discussed. A substantial decrease in the sheet resistance of p-type GaAs is measured for Pt-reacted contacts in which a single thin layer of Mg is interposed. It is pointed out that this lowering, which is attributed to the doping action of Mg, if not taken into account, can lead to serious errors in the estimation of specific contact resistivity.

Original languageEnglish
Pages (from-to)903 - 905
Number of pages3
JournalSolid-State Electronics
Volume29
Issue number9
DOIs
Publication statusPublished - 1986
MoE publication typeNot Eligible

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Ohmic contacts
Sheet resistance
electric contacts
Doping (additives)
Semiconductor materials
electrical resistivity
conductivity
gallium arsenide

Cite this

Kattelus, Hannu ; Tandon, Jawahar ; Nicolet, Marc. / Characterization of reacted ohmic contacts to GaAs. In: Solid-State Electronics. 1986 ; Vol. 29, No. 9. pp. 903 - 905.
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Kattelus, H, Tandon, J & Nicolet, M 1986, 'Characterization of reacted ohmic contacts to GaAs', Solid-State Electronics, vol. 29, no. 9, pp. 903 - 905. https://doi.org/10.1016/0038-1101(86)90011-0

Characterization of reacted ohmic contacts to GaAs. / Kattelus, Hannu; Tandon, Jawahar; Nicolet, Marc.

In: Solid-State Electronics, Vol. 29, No. 9, 1986, p. 903 - 905.

Research output: Contribution to journalArticleScientificpeer-review

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AU - Kattelus, Hannu

AU - Tandon, Jawahar

AU - Nicolet, Marc

PY - 1986

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AB - In the calculation of the true value of specific resistivity of reacted ohmic contacts, a modification in the conductivity of the semiconductor that may occur below the contact must be considered. Contacts to GaAs are discussed. A substantial decrease in the sheet resistance of p-type GaAs is measured for Pt-reacted contacts in which a single thin layer of Mg is interposed. It is pointed out that this lowering, which is attributed to the doping action of Mg, if not taken into account, can lead to serious errors in the estimation of specific contact resistivity.

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DO - 10.1016/0038-1101(86)90011-0

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JO - Solid-State Electronics

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