Characterization of surface states by SPV-transient

J. Sinkkonen, S. Novikov, A. Varpula

Research output: Contribution to journalArticleScientificpeer-review

Abstract

A model for the slow, large signal SPV-transient is developed which accounts for carrier trapping to surface states. Both majority and minority carrier processes are included. SPV-transients are measured from various epiready n + -GaAs wafers using Kelvin probe. Typically the transients take place in 1-1000 s time scale. By fitting the model with experimental results trapping parameters, i.e. surface potential barrier height, energy and density of surface states and electron and hole capture cross-sections are determined.

Original languageEnglish
Pages (from-to)662-664
Number of pages3
JournalApplied Surface Science
Volume255
Issue number3
DOIs
Publication statusPublished - 30 Nov 2008
MoE publication typeA1 Journal article-refereed

Fingerprint

Surface states
trapping
majority carriers
Energy barriers
Surface potential
minority carriers
electron capture
absorption cross sections
wafers
Electrons
probes
energy

Keywords

  • Gallium arsenide
  • Kelvin probe
  • Surface states
  • Trapping kinetics

Cite this

Sinkkonen, J. ; Novikov, S. ; Varpula, A. / Characterization of surface states by SPV-transient. In: Applied Surface Science. 2008 ; Vol. 255, No. 3. pp. 662-664.
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Characterization of surface states by SPV-transient. / Sinkkonen, J.; Novikov, S.; Varpula, A.

In: Applied Surface Science, Vol. 255, No. 3, 30.11.2008, p. 662-664.

Research output: Contribution to journalArticleScientificpeer-review

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