Characterization of surface states by SPV-transient

J. Sinkkonen, S. Novikov, A. Varpula

Research output: Contribution to journalArticleScientificpeer-review

4 Citations (Scopus)


A model for the slow, large signal SPV-transient is developed which accounts for carrier trapping to surface states. Both majority and minority carrier processes are included. SPV-transients are measured from various epiready n + -GaAs wafers using Kelvin probe. Typically the transients take place in 1-1000 s time scale. By fitting the model with experimental results trapping parameters, i.e. surface potential barrier height, energy and density of surface states and electron and hole capture cross-sections are determined.

Original languageEnglish
Pages (from-to)662-664
Number of pages3
JournalApplied Surface Science
Issue number3
Publication statusPublished - 30 Nov 2008
MoE publication typeA1 Journal article-refereed


  • Gallium arsenide
  • Kelvin probe
  • Surface states
  • Trapping kinetics


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