Characterization of surface states by SPV-transient

J. Sinkkonen; S. Novikov; A. Varpula

doi:10.1016/j.apsusc.2008.07.008

Characterization of surface states by SPV-transient

J. Sinkkonen^*, S. Novikov, A. Varpula

^*Corresponding author for this work

Not published at VTT

Aalto University

Research output: Contribution to journal › Article › Scientific › peer-review

4 Citations (Scopus)

Abstract

A model for the slow, large signal SPV-transient is developed which accounts for carrier trapping to surface states. Both majority and minority carrier processes are included. SPV-transients are measured from various epiready n ⁺ -GaAs wafers using Kelvin probe. Typically the transients take place in 1-1000 s time scale. By fitting the model with experimental results trapping parameters, i.e. surface potential barrier height, energy and density of surface states and electron and hole capture cross-sections are determined.

Original language	English
Pages (from-to)	662-664
Number of pages	3
Journal	Applied Surface Science
Volume	255
Issue number	3
DOIs	https://doi.org/10.1016/j.apsusc.2008.07.008
Publication status	Published - 30 Nov 2008
MoE publication type	A1 Journal article-refereed

Keywords

Gallium arsenide
Kelvin probe
Surface states
Trapping kinetics

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10.1016/j.apsusc.2008.07.008

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title = "Characterization of surface states by SPV-transient",

abstract = " A model for the slow, large signal SPV-transient is developed which accounts for carrier trapping to surface states. Both majority and minority carrier processes are included. SPV-transients are measured from various epiready n + -GaAs wafers using Kelvin probe. Typically the transients take place in 1-1000 s time scale. By fitting the model with experimental results trapping parameters, i.e. surface potential barrier height, energy and density of surface states and electron and hole capture cross-sections are determined.",

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AU - Novikov, S.

AU - Varpula, A.

PY - 2008/11/30

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N2 - A model for the slow, large signal SPV-transient is developed which accounts for carrier trapping to surface states. Both majority and minority carrier processes are included. SPV-transients are measured from various epiready n + -GaAs wafers using Kelvin probe. Typically the transients take place in 1-1000 s time scale. By fitting the model with experimental results trapping parameters, i.e. surface potential barrier height, energy and density of surface states and electron and hole capture cross-sections are determined.

AB - A model for the slow, large signal SPV-transient is developed which accounts for carrier trapping to surface states. Both majority and minority carrier processes are included. SPV-transients are measured from various epiready n + -GaAs wafers using Kelvin probe. Typically the transients take place in 1-1000 s time scale. By fitting the model with experimental results trapping parameters, i.e. surface potential barrier height, energy and density of surface states and electron and hole capture cross-sections are determined.

KW - Gallium arsenide

KW - Kelvin probe

KW - Surface states

KW - Trapping kinetics

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VL - 255

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JO - Applied Surface Science

JF - Applied Surface Science

IS - 3

ER -

Characterization of surface states by SPV-transient

Abstract

Keywords

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