Characterization of thin p-on-p radiation detectors with active edges

T. Peltola, X. Wu, Juha Kalliopuska, C. Granja, J. Jakubek, M. Jakubek, J. Härkönen, A. Gädda

Research output: Contribution to journalArticleScientificpeer-review

4 Citations (Scopus)


Active edge p-on-p silicon pixel detectors with thickness of 100μm were fabricated on 150 mm float zone silicon wafers at VTT. By combining measured results and TCAD simulations, a detailed study of electric field distributions and charge collection performances as a function of applied voltage in a p-on-p detector was carried out. A comparison with the results of a more conventional active edge p-on-n pixel sensor is presented. The results from 3D spatial mapping show that at pixel-to-edge distances less than 100μm the sensitive volume is extended to the physical edge of the detector when the applied voltage is above full depletion. The results from a spectroscopic measurement demonstrate a good functionality of the edge pixels. The interpixel isolation above full depletion and the breakdown voltage were found to be equal to the p-on-n sensor while lower charge collection was observed in the p-on-p pixel sensor below 80 V. Simulations indicated this to be partly a result of a more favourable weighting field in the p-on-n sensor and partly of lower hole lifetimes in the p-bulk.
Original languageEnglish
Pages (from-to)139-146
JournalNuclear Instruments and Methods in Physics Research. Section A: Accelerators, Spectrometers, Detectors and Associated Equipment
Publication statusPublished - 21 Mar 2016
MoE publication typeA1 Journal article-refereed


  • Charge collection
  • Electrical characterization
  • Pixel sensors
  • Silicon radiation detectors
  • TCAD simulations


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