Characterization of thin p-on-p radiation detectors with active edges

T. Peltola, X. Wu, J. Kalliopuska, C. Granja, J. Jakubek, M. Jakubek, J. Härkönen, A. Gädda

Research output: Contribution to journalArticleScientificpeer-review

2 Citations (Scopus)

Abstract

Active edge p-on-p silicon pixel detectors with thickness of 100μm were fabricated on 150 mm float zone silicon wafers at VTT. By combining measured results and TCAD simulations, a detailed study of electric field distributions and charge collection performances as a function of applied voltage in a p-on-p detector was carried out. A comparison with the results of a more conventional active edge p-on-n pixel sensor is presented. The results from 3D spatial mapping show that at pixel-to-edge distances less than 100μm the sensitive volume is extended to the physical edge of the detector when the applied voltage is above full depletion. The results from a spectroscopic measurement demonstrate a good functionality of the edge pixels. The interpixel isolation above full depletion and the breakdown voltage were found to be equal to the p-on-n sensor while lower charge collection was observed in the p-on-p pixel sensor below 80 V. Simulations indicated this to be partly a result of a more favourable weighting field in the p-on-n sensor and partly of lower hole lifetimes in the p-bulk.

Original languageEnglish
Pages (from-to)139-146
Number of pages8
JournalNuclear Instruments and Methods in Physics Research. Section A: Accelerators, Spectrometers, Detectors and Associated Equipment
Volume813
DOIs
Publication statusPublished - 21 Mar 2016
MoE publication typeA1 Journal article-refereed

Fingerprint

Radiation detectors
radiation detectors
Pixels
pixels
sensors
Sensors
Detectors
detectors
depletion
float zones
Electric potential
electric potential
silicon
Electric breakdown
Silicon wafers
electrical faults
isolation
simulation
Electric fields
wafers

Keywords

  • Charge collection
  • Electrical characterization
  • Pixel sensors
  • Silicon radiation detectors
  • TCAD simulations

Cite this

Peltola, T. ; Wu, X. ; Kalliopuska, J. ; Granja, C. ; Jakubek, J. ; Jakubek, M. ; Härkönen, J. ; Gädda, A. / Characterization of thin p-on-p radiation detectors with active edges. In: Nuclear Instruments and Methods in Physics Research. Section A: Accelerators, Spectrometers, Detectors and Associated Equipment. 2016 ; Vol. 813. pp. 139-146.
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Characterization of thin p-on-p radiation detectors with active edges. / Peltola, T.; Wu, X.; Kalliopuska, J.; Granja, C.; Jakubek, J.; Jakubek, M.; Härkönen, J.; Gädda, A.

In: Nuclear Instruments and Methods in Physics Research. Section A: Accelerators, Spectrometers, Detectors and Associated Equipment, Vol. 813, 21.03.2016, p. 139-146.

Research output: Contribution to journalArticleScientificpeer-review

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AU - Peltola, T.

AU - Wu, X.

AU - Kalliopuska, J.

AU - Granja, C.

AU - Jakubek, J.

AU - Jakubek, M.

AU - Härkönen, J.

AU - Gädda, A.

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