Characterization of thin p-on-p radiation detectors with active edges

T. Peltola; X. Wu; Juha Kalliopuska; C. Granja; J. Jakubek; M. Jakubek; J. Härkönen; A. Gädda

doi:10.1016/j.nima.2016.01.016

Characterization of thin p-on-p radiation detectors with active edges

T. Peltola^*
, X. Wu
, Juha Kalliopuska
, C. Granja
, J. Jakubek
, M. Jakubek
, J. Härkönen
, A. Gädda

^*Corresponding author for this work

VTT Technical Research Centre of Finland

Research output: Contribution to journal › Article › Scientific › peer-review

4 Citations (Scopus)

Abstract

Active edge p-on-p silicon pixel detectors with thickness of 100μm were fabricated on 150 mm float zone silicon wafers at VTT. By combining measured results and TCAD simulations, a detailed study of electric field distributions and charge collection performances as a function of applied voltage in a p-on-p detector was carried out. A comparison with the results of a more conventional active edge p-on-n pixel sensor is presented. The results from 3D spatial mapping show that at pixel-to-edge distances less than 100μm the sensitive volume is extended to the physical edge of the detector when the applied voltage is above full depletion. The results from a spectroscopic measurement demonstrate a good functionality of the edge pixels. The interpixel isolation above full depletion and the breakdown voltage were found to be equal to the p-on-n sensor while lower charge collection was observed in the p-on-p pixel sensor below 80 V. Simulations indicated this to be partly a result of a more favourable weighting field in the p-on-n sensor and partly of lower hole lifetimes in the p-bulk.

Original language	English
Pages (from-to)	139-146
Journal	Nuclear Instruments and Methods in Physics Research. Section A: Accelerators, Spectrometers, Detectors and Associated Equipment
Volume	813
DOIs	https://doi.org/10.1016/j.nima.2016.01.016
Publication status	Published - 21 Mar 2016
MoE publication type	A1 Journal article-refereed

Funding

Access and operation of the Van de Graaff accelerator of the IEAP CTU Prague were supported by the MSMT Grant Research Infrastructure No. LM2011030 of the Ministry of Education, Youth and Sports of the Czech Republic.

Keywords

Charge collection
Electrical characterization
Pixel sensors
Silicon radiation detectors
TCAD simulations

Access to Document

10.1016/j.nima.2016.01.016

Cite this

@article{90a5db0d26454ced886c8de05cd10e6a,

title = "Characterization of thin p-on-p radiation detectors with active edges",

abstract = "Active edge p-on-p silicon pixel detectors with thickness of 100μm were fabricated on 150 mm float zone silicon wafers at VTT. By combining measured results and TCAD simulations, a detailed study of electric field distributions and charge collection performances as a function of applied voltage in a p-on-p detector was carried out. A comparison with the results of a more conventional active edge p-on-n pixel sensor is presented. The results from 3D spatial mapping show that at pixel-to-edge distances less than 100μm the sensitive volume is extended to the physical edge of the detector when the applied voltage is above full depletion. The results from a spectroscopic measurement demonstrate a good functionality of the edge pixels. The interpixel isolation above full depletion and the breakdown voltage were found to be equal to the p-on-n sensor while lower charge collection was observed in the p-on-p pixel sensor below 80 V. Simulations indicated this to be partly a result of a more favourable weighting field in the p-on-n sensor and partly of lower hole lifetimes in the p-bulk.",

keywords = "Charge collection, Electrical characterization, Pixel sensors, Silicon radiation detectors, TCAD simulations",

author = "T. Peltola and X. Wu and Juha Kalliopuska and C. Granja and J. Jakubek and M. Jakubek and J. H{\"a}rk{\"o}nen and A. G{\"a}dda",

year = "2016",

month = mar,

day = "21",

doi = "10.1016/j.nima.2016.01.016",

language = "English",

volume = "813",

pages = "139--146",

journal = "Nuclear Instruments and Methods in Physics Research. Section A: Accelerators, Spectrometers, Detectors and Associated Equipment",

issn = "0168-9002",

publisher = "Elsevier",

}

TY - JOUR

T1 - Characterization of thin p-on-p radiation detectors with active edges

AU - Peltola, T.

AU - Wu, X.

AU - Kalliopuska, Juha

AU - Granja, C.

AU - Jakubek, J.

AU - Jakubek, M.

AU - Härkönen, J.

AU - Gädda, A.

PY - 2016/3/21

Y1 - 2016/3/21

N2 - Active edge p-on-p silicon pixel detectors with thickness of 100μm were fabricated on 150 mm float zone silicon wafers at VTT. By combining measured results and TCAD simulations, a detailed study of electric field distributions and charge collection performances as a function of applied voltage in a p-on-p detector was carried out. A comparison with the results of a more conventional active edge p-on-n pixel sensor is presented. The results from 3D spatial mapping show that at pixel-to-edge distances less than 100μm the sensitive volume is extended to the physical edge of the detector when the applied voltage is above full depletion. The results from a spectroscopic measurement demonstrate a good functionality of the edge pixels. The interpixel isolation above full depletion and the breakdown voltage were found to be equal to the p-on-n sensor while lower charge collection was observed in the p-on-p pixel sensor below 80 V. Simulations indicated this to be partly a result of a more favourable weighting field in the p-on-n sensor and partly of lower hole lifetimes in the p-bulk.

AB - Active edge p-on-p silicon pixel detectors with thickness of 100μm were fabricated on 150 mm float zone silicon wafers at VTT. By combining measured results and TCAD simulations, a detailed study of electric field distributions and charge collection performances as a function of applied voltage in a p-on-p detector was carried out. A comparison with the results of a more conventional active edge p-on-n pixel sensor is presented. The results from 3D spatial mapping show that at pixel-to-edge distances less than 100μm the sensitive volume is extended to the physical edge of the detector when the applied voltage is above full depletion. The results from a spectroscopic measurement demonstrate a good functionality of the edge pixels. The interpixel isolation above full depletion and the breakdown voltage were found to be equal to the p-on-n sensor while lower charge collection was observed in the p-on-p pixel sensor below 80 V. Simulations indicated this to be partly a result of a more favourable weighting field in the p-on-n sensor and partly of lower hole lifetimes in the p-bulk.

KW - Charge collection

KW - Electrical characterization

KW - Pixel sensors

KW - Silicon radiation detectors

KW - TCAD simulations

UR - https://www.scopus.com/pages/publications/84956996604

U2 - 10.1016/j.nima.2016.01.016

DO - 10.1016/j.nima.2016.01.016

M3 - Article

AN - SCOPUS:84956996604

SN - 0168-9002

VL - 813

SP - 139

EP - 146

JO - Nuclear Instruments and Methods in Physics Research. Section A: Accelerators, Spectrometers, Detectors and Associated Equipment

JF - Nuclear Instruments and Methods in Physics Research. Section A: Accelerators, Spectrometers, Detectors and Associated Equipment

ER -

Characterization of thin p-on-p radiation detectors with active edges

Abstract

Funding

Keywords

Access to Document

Other files and links

Fingerprint

Cite this