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Characterization of W-N alloys formed by sputter deposition

  • Klaus Affolter
  • , Hannu Kattelus
  • , Marc Nicolet
  • California Institute of Technology

Research output: Chapter in Book/Report/Conference proceedingConference article in proceedingsScientificpeer-review

Abstract

Thin films of W-N alloys have been prepared by reactive rf sputtering from a W target. Alloy compositions up to about 65at.%N, can be achieved by this method. The structure and stability of these films have been studied using x-ray diffraction analysis. Between 18 and 38at.%N, amorphous phases are formed with crystallization temperatures up to above 600°C. All the films gradually release N upon vacuum annealing and decompose into αW between 700 and 800°C in vacuo. Application of W-N alloys as diffusion barriers in a Si metallization scheme is discussed.
Original languageEnglish
Title of host publicationThin Films
Subtitle of host publicationThe Relationship of Structure to Properties
EditorsCarolyn Rubin Aita, K.S. SreeHarsha
Place of PublicationPittsburgh
PublisherMaterials Research Society
Pages167-173
ISBN (Print)978-0-931837-12-8
DOIs
Publication statusPublished - 1985
MoE publication typeA4 Article in a conference publication
EventMaterials Research Society 1985 Spring Meeting - San Francisco, United States
Duration: 15 Apr 198517 Apr 1985

Publication series

SeriesMaterials Research Society Symposia Proceedings
Volume47
ISSN0272-9172

Conference

ConferenceMaterials Research Society 1985 Spring Meeting
Country/TerritoryUnited States
CitySan Francisco
Period15/04/8517/04/85

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