Characterization of wet chemistry resist and resist residues removal processes

Esa Muukkonen, Teija Häkkinen, Tarja Riihisaari, Simo Eränen, Ismo Luusua, Arto Kiviranta, Pekka Savolahti

    Research output: Contribution to journalArticleScientificpeer-review

    Abstract

    Light scattering measurement equipment was used in setting up a resist removal and cleaning process. The resist residue removal efficiency of the SCI bath after unsuccessful resist stripping was tested. Metal contamination loading was measured with Total reflection x-ray Fluorescence (TXRF) equipment. Chemical analysis methods and in situ monitoring were used to study aging of the bath.
    Original languageEnglish
    Pages (from-to)255-258
    Number of pages4
    JournalPhysica Scripta
    VolumeT79
    DOIs
    Publication statusPublished - 1999
    MoE publication typeA1 Journal article-refereed

    Fingerprint

    Resist
    Chemistry
    baths
    chemistry
    x ray fluorescence
    stripping
    chemical analysis
    cleaning
    Chemical Analysis
    contamination
    light scattering
    Cleaning
    Light Scattering
    Contamination
    Fluorescence
    Metals
    Monitoring
    metals

    Cite this

    Muukkonen, E., Häkkinen, T., Riihisaari, T., Eränen, S., Luusua, I., Kiviranta, A., & Savolahti, P. (1999). Characterization of wet chemistry resist and resist residues removal processes. Physica Scripta, T79, 255-258. https://doi.org/10.1238/Physica.Topical.079a00255
    Muukkonen, Esa ; Häkkinen, Teija ; Riihisaari, Tarja ; Eränen, Simo ; Luusua, Ismo ; Kiviranta, Arto ; Savolahti, Pekka. / Characterization of wet chemistry resist and resist residues removal processes. In: Physica Scripta. 1999 ; Vol. T79. pp. 255-258.
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    abstract = "Light scattering measurement equipment was used in setting up a resist removal and cleaning process. The resist residue removal efficiency of the SCI bath after unsuccessful resist stripping was tested. Metal contamination loading was measured with Total reflection x-ray Fluorescence (TXRF) equipment. Chemical analysis methods and in situ monitoring were used to study aging of the bath.",
    author = "Esa Muukkonen and Teija H{\"a}kkinen and Tarja Riihisaari and Simo Er{\"a}nen and Ismo Luusua and Arto Kiviranta and Pekka Savolahti",
    year = "1999",
    doi = "10.1238/Physica.Topical.079a00255",
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    Muukkonen, E, Häkkinen, T, Riihisaari, T, Eränen, S, Luusua, I, Kiviranta, A & Savolahti, P 1999, 'Characterization of wet chemistry resist and resist residues removal processes', Physica Scripta, vol. T79, pp. 255-258. https://doi.org/10.1238/Physica.Topical.079a00255

    Characterization of wet chemistry resist and resist residues removal processes. / Muukkonen, Esa; Häkkinen, Teija; Riihisaari, Tarja; Eränen, Simo; Luusua, Ismo; Kiviranta, Arto; Savolahti, Pekka.

    In: Physica Scripta, Vol. T79, 1999, p. 255-258.

    Research output: Contribution to journalArticleScientificpeer-review

    TY - JOUR

    T1 - Characterization of wet chemistry resist and resist residues removal processes

    AU - Muukkonen, Esa

    AU - Häkkinen, Teija

    AU - Riihisaari, Tarja

    AU - Eränen, Simo

    AU - Luusua, Ismo

    AU - Kiviranta, Arto

    AU - Savolahti, Pekka

    PY - 1999

    Y1 - 1999

    N2 - Light scattering measurement equipment was used in setting up a resist removal and cleaning process. The resist residue removal efficiency of the SCI bath after unsuccessful resist stripping was tested. Metal contamination loading was measured with Total reflection x-ray Fluorescence (TXRF) equipment. Chemical analysis methods and in situ monitoring were used to study aging of the bath.

    AB - Light scattering measurement equipment was used in setting up a resist removal and cleaning process. The resist residue removal efficiency of the SCI bath after unsuccessful resist stripping was tested. Metal contamination loading was measured with Total reflection x-ray Fluorescence (TXRF) equipment. Chemical analysis methods and in situ monitoring were used to study aging of the bath.

    U2 - 10.1238/Physica.Topical.079a00255

    DO - 10.1238/Physica.Topical.079a00255

    M3 - Article

    VL - T79

    SP - 255

    EP - 258

    JO - Physica Scripta

    JF - Physica Scripta

    SN - 0031-8949

    ER -