VTT has developed a straightforward and fast process to fabricate edgeless (active edge) microstrip and pixel detectors on 6" (150 mm) wafers. The presentation summarizes the fabrication process of 150 ?m thick p-on-n and n-on-n prototypes having dead layer at the edge below a micron. Electrical and radiation response characterization of 1.4x1.4 cm2 edgeless detectors has been done by coupling them to the Medipix2 readout chips. The leakage currents were measured to be ~90 nA/cm2. Radiation response characterization includes a X-ray tube and source responses. These results show that the edge response depends dramatically on the active edge distance from the nearest pixels.
|Publication status||Published - 2010|
|MoE publication type||Not Eligible|
|Event||5th "Trento" Workshop on Advanced Silicon Radiation Detectors - Manchester, United Kingdom|
Duration: 24 Feb 2010 → 26 Feb 2010
|Conference||5th "Trento" Workshop on Advanced Silicon Radiation Detectors|
|Period||24/02/10 → 26/02/10|
- edgeless detector