Charactrerisation of Medipix2 edgeless pixel detectors

Juha Kalliopuska, Simo Eränen, Tuula Virolainen

Research output: Contribution to conferenceConference articleScientific


VTT has developed a straightforward and fast process to fabricate edgeless (active edge) microstrip and pixel detectors on 6" (150 mm) wafers. The presentation summarizes the fabrication process of 150 ?m thick p-on-n and n-on-n prototypes having dead layer at the edge below a micron. Electrical and radiation response characterization of 1.4x1.4 cm2 edgeless detectors has been done by coupling them to the Medipix2 readout chips. The leakage currents were measured to be ~90 nA/cm2. Radiation response characterization includes a X-ray tube and source responses. These results show that the edge response depends dramatically on the active edge distance from the nearest pixels.
Original languageEnglish
Publication statusPublished - 2010
MoE publication typeNot Eligible
Event5th "Trento" Workshop on Advanced Silicon Radiation Detectors - Manchester, United Kingdom
Duration: 24 Feb 201026 Feb 2010


Conference5th "Trento" Workshop on Advanced Silicon Radiation Detectors
Country/TerritoryUnited Kingdom


  • ion-implantation
  • edgeless detector
  • Medipix2


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