Charactrerisation of Medipix2 edgeless pixel detectors

Juha Kalliopuska, Simo Eränen, Tuula Virolainen

Research output: Contribution to conferenceConference articleScientific

Abstract

VTT has developed a straightforward and fast process to fabricate edgeless (active edge) microstrip and pixel detectors on 6" (150 mm) wafers. The presentation summarizes the fabrication process of 150 ?m thick p-on-n and n-on-n prototypes having dead layer at the edge below a micron. Electrical and radiation response characterization of 1.4x1.4 cm2 edgeless detectors has been done by coupling them to the Medipix2 readout chips. The leakage currents were measured to be ~90 nA/cm2. Radiation response characterization includes a X-ray tube and source responses. These results show that the edge response depends dramatically on the active edge distance from the nearest pixels.
Original languageEnglish
Publication statusPublished - 2010
MoE publication typeNot Eligible
Event5th "Trento" Workshop on Advanced Silicon Radiation Detectors - Manchester, United Kingdom
Duration: 24 Feb 201026 Feb 2010

Conference

Conference5th "Trento" Workshop on Advanced Silicon Radiation Detectors
CountryUnited Kingdom
CityManchester
Period24/02/1026/02/10

Fingerprint

pixels
detectors
radiation
readout
leakage
chips
prototypes
wafers
tubes
fabrication
x rays

Keywords

  • ion-implantation
  • edgeless detector
  • Medipix2

Cite this

Kalliopuska, J., Eränen, S., & Virolainen, T. (2010). Charactrerisation of Medipix2 edgeless pixel detectors. Paper presented at 5th "Trento" Workshop on Advanced Silicon Radiation Detectors, Manchester, United Kingdom.
Kalliopuska, Juha ; Eränen, Simo ; Virolainen, Tuula. / Charactrerisation of Medipix2 edgeless pixel detectors. Paper presented at 5th "Trento" Workshop on Advanced Silicon Radiation Detectors, Manchester, United Kingdom.
@conference{605d533b5f594536a29195d6678a37a4,
title = "Charactrerisation of Medipix2 edgeless pixel detectors",
abstract = "VTT has developed a straightforward and fast process to fabricate edgeless (active edge) microstrip and pixel detectors on 6{"} (150 mm) wafers. The presentation summarizes the fabrication process of 150 ?m thick p-on-n and n-on-n prototypes having dead layer at the edge below a micron. Electrical and radiation response characterization of 1.4x1.4 cm2 edgeless detectors has been done by coupling them to the Medipix2 readout chips. The leakage currents were measured to be ~90 nA/cm2. Radiation response characterization includes a X-ray tube and source responses. These results show that the edge response depends dramatically on the active edge distance from the nearest pixels.",
keywords = "ion-implantation, edgeless detector, Medipix2",
author = "Juha Kalliopuska and Simo Er{\"a}nen and Tuula Virolainen",
note = "Project code: 33212 Slides 28 p.; 5th {"}Trento{"} Workshop on Advanced Silicon Radiation Detectors ; Conference date: 24-02-2010 Through 26-02-2010",
year = "2010",
language = "English",

}

Kalliopuska, J, Eränen, S & Virolainen, T 2010, 'Charactrerisation of Medipix2 edgeless pixel detectors' Paper presented at 5th "Trento" Workshop on Advanced Silicon Radiation Detectors, Manchester, United Kingdom, 24/02/10 - 26/02/10, .

Charactrerisation of Medipix2 edgeless pixel detectors. / Kalliopuska, Juha; Eränen, Simo; Virolainen, Tuula.

2010. Paper presented at 5th "Trento" Workshop on Advanced Silicon Radiation Detectors, Manchester, United Kingdom.

Research output: Contribution to conferenceConference articleScientific

TY - CONF

T1 - Charactrerisation of Medipix2 edgeless pixel detectors

AU - Kalliopuska, Juha

AU - Eränen, Simo

AU - Virolainen, Tuula

N1 - Project code: 33212 Slides 28 p.

PY - 2010

Y1 - 2010

N2 - VTT has developed a straightforward and fast process to fabricate edgeless (active edge) microstrip and pixel detectors on 6" (150 mm) wafers. The presentation summarizes the fabrication process of 150 ?m thick p-on-n and n-on-n prototypes having dead layer at the edge below a micron. Electrical and radiation response characterization of 1.4x1.4 cm2 edgeless detectors has been done by coupling them to the Medipix2 readout chips. The leakage currents were measured to be ~90 nA/cm2. Radiation response characterization includes a X-ray tube and source responses. These results show that the edge response depends dramatically on the active edge distance from the nearest pixels.

AB - VTT has developed a straightforward and fast process to fabricate edgeless (active edge) microstrip and pixel detectors on 6" (150 mm) wafers. The presentation summarizes the fabrication process of 150 ?m thick p-on-n and n-on-n prototypes having dead layer at the edge below a micron. Electrical and radiation response characterization of 1.4x1.4 cm2 edgeless detectors has been done by coupling them to the Medipix2 readout chips. The leakage currents were measured to be ~90 nA/cm2. Radiation response characterization includes a X-ray tube and source responses. These results show that the edge response depends dramatically on the active edge distance from the nearest pixels.

KW - ion-implantation

KW - edgeless detector

KW - Medipix2

M3 - Conference article

ER -

Kalliopuska J, Eränen S, Virolainen T. Charactrerisation of Medipix2 edgeless pixel detectors. 2010. Paper presented at 5th "Trento" Workshop on Advanced Silicon Radiation Detectors, Manchester, United Kingdom.