Charactrerisation of Medipix2 edgeless pixel detectors

Juha Kalliopuska; Simo Eränen; Tuula Virolainen

Charactrerisation of Medipix2 edgeless pixel detectors

Juha Kalliopuska, Simo Eränen, Tuula Virolainen

VTT Technical Research Centre of Finland

VTT (former employee or external)

Research output: Contribution to conference › Conference article › Scientific

Abstract

VTT has developed a straightforward and fast process to fabricate edgeless (active edge) microstrip and pixel detectors on 6" (150 mm) wafers. The presentation summarizes the fabrication process of 150 ?m thick p-on-n and n-on-n prototypes having dead layer at the edge below a micron. Electrical and radiation response characterization of 1.4x1.4 cm² edgeless detectors has been done by coupling them to the Medipix2 readout chips. The leakage currents were measured to be ~90 nA/cm². Radiation response characterization includes a X-ray tube and source responses. These results show that the edge response depends dramatically on the active edge distance from the nearest pixels.

Original language	English
Publication status	Published - 2010
MoE publication type	Not Eligible
Event	5th "Trento" Workshop on Advanced Silicon Radiation Detectors - Manchester, United Kingdom Duration: 24 Feb 2010 → 26 Feb 2010

Conference

Conference	5th "Trento" Workshop on Advanced Silicon Radiation Detectors
Country/Territory	United Kingdom
City	Manchester
Period	24/02/10 → 26/02/10

Keywords

ion-implantation
edgeless detector
Medipix2

Cite this

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title = "Charactrerisation of Medipix2 edgeless pixel detectors",

abstract = "VTT has developed a straightforward and fast process to fabricate edgeless (active edge) microstrip and pixel detectors on 6{"} (150 mm) wafers. The presentation summarizes the fabrication process of 150 ?m thick p-on-n and n-on-n prototypes having dead layer at the edge below a micron. Electrical and radiation response characterization of 1.4x1.4 cm2 edgeless detectors has been done by coupling them to the Medipix2 readout chips. The leakage currents were measured to be \textasciitilde{}90 nA/cm2. Radiation response characterization includes a X-ray tube and source responses. These results show that the edge response depends dramatically on the active edge distance from the nearest pixels.",

keywords = "ion-implantation, edgeless detector, Medipix2",

author = "Juha Kalliopuska and Simo Er{\"a}nen and Tuula Virolainen",

note = "Project code: 33212 Slides 28 p.; 5th {"}Trento{"} Workshop on Advanced Silicon Radiation Detectors ; Conference date: 24-02-2010 Through 26-02-2010",

year = "2010",

language = "English",

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TY - CONF

T1 - Charactrerisation of Medipix2 edgeless pixel detectors

AU - Kalliopuska, Juha

AU - Eränen, Simo

AU - Virolainen, Tuula

N1 - Project code: 33212 Slides 28 p.

PY - 2010

Y1 - 2010

N2 - VTT has developed a straightforward and fast process to fabricate edgeless (active edge) microstrip and pixel detectors on 6" (150 mm) wafers. The presentation summarizes the fabrication process of 150 ?m thick p-on-n and n-on-n prototypes having dead layer at the edge below a micron. Electrical and radiation response characterization of 1.4x1.4 cm2 edgeless detectors has been done by coupling them to the Medipix2 readout chips. The leakage currents were measured to be ~90 nA/cm2. Radiation response characterization includes a X-ray tube and source responses. These results show that the edge response depends dramatically on the active edge distance from the nearest pixels.

AB - VTT has developed a straightforward and fast process to fabricate edgeless (active edge) microstrip and pixel detectors on 6" (150 mm) wafers. The presentation summarizes the fabrication process of 150 ?m thick p-on-n and n-on-n prototypes having dead layer at the edge below a micron. Electrical and radiation response characterization of 1.4x1.4 cm2 edgeless detectors has been done by coupling them to the Medipix2 readout chips. The leakage currents were measured to be ~90 nA/cm2. Radiation response characterization includes a X-ray tube and source responses. These results show that the edge response depends dramatically on the active edge distance from the nearest pixels.

KW - ion-implantation

KW - edgeless detector

KW - Medipix2

M3 - Conference article

T2 - 5th "Trento" Workshop on Advanced Silicon Radiation Detectors

Y2 - 24 February 2010 through 26 February 2010

ER -

Charactrerisation of Medipix2 edgeless pixel detectors

Abstract

Conference

Keywords

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Cite this