Charge carrier mobility in Langmuir-Blodgett films of poly (3-hexylthiophene)

G. Juška, K. Arlauskas, Ronald Österbacka, Henrik Sandberg, Henrik Stubb

Research output: Contribution to journalArticleScientificpeer-review

1 Citation (Scopus)

Abstract

The tendency to saturation in the collected charge as a function of light intensity in Langmuir-Blodgett films of poly(3-hexylthiophene) (PHT) has been studied. The tendency to saturation can have two reasons; that the space charge limited current regime has been reached, or influence of very fast bimolecular recombination. We have studied these two cases, and we conclude that bimolecular recombination is a probable cause for the tendency to saturation. The hole mobility in PHT can therefore possibly be estimated as high as 1 cm2/Vs in the initial stage after photoexcitation.
Original languageEnglish
Pages (from-to)88-89
JournalSynthetic Metals
Volume101
Issue number1
DOIs
Publication statusPublished - 1999
MoE publication typeA1 Journal article-refereed

Fingerprint

Dive into the research topics of 'Charge carrier mobility in Langmuir-Blodgett films of poly (3-hexylthiophene)'. Together they form a unique fingerprint.

Cite this