Charge carrier mobility in Langmuir-Blodgett films of poly (3-hexylthiophene)

G. Juška, K. Arlauskas, Ronald Österbacka, Henrik Sandberg, Henrik Stubb

Research output: Contribution to journalArticleScientificpeer-review

1 Citation (Scopus)

Abstract

The tendency to saturation in the collected charge as a function of light intensity in Langmuir-Blodgett films of poly(3-hexylthiophene) (PHT) has been studied. The tendency to saturation can have two reasons; that the space charge limited current regime has been reached, or influence of very fast bimolecular recombination. We have studied these two cases, and we conclude that bimolecular recombination is a probable cause for the tendency to saturation. The hole mobility in PHT can therefore possibly be estimated as high as 1 cm2/Vs in the initial stage after photoexcitation.
Original languageEnglish
Pages (from-to)88-89
JournalSynthetic Metals
Volume101
Issue number1
DOIs
Publication statusPublished - 1999
MoE publication typeA1 Journal article-refereed

Fingerprint

Hole mobility
Photoexcitation
Langmuir Blodgett films
Carrier mobility
Langmuir-Blodgett films
carrier mobility
Charge carriers
Electric space charge
charge carriers
tendencies
saturation
hole mobility
photoexcitation
luminous intensity
space charge
causes
poly(3-hexylthiophene)

Cite this

Juška, G. ; Arlauskas, K. ; Österbacka, Ronald ; Sandberg, Henrik ; Stubb, Henrik. / Charge carrier mobility in Langmuir-Blodgett films of poly (3-hexylthiophene). In: Synthetic Metals. 1999 ; Vol. 101, No. 1. pp. 88-89.
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Charge carrier mobility in Langmuir-Blodgett films of poly (3-hexylthiophene). / Juška, G.; Arlauskas, K.; Österbacka, Ronald; Sandberg, Henrik; Stubb, Henrik.

In: Synthetic Metals, Vol. 101, No. 1, 1999, p. 88-89.

Research output: Contribution to journalArticleScientificpeer-review

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