Charge carrier mobility in Langmuir-Blodgett films of poly (3-hexylthiophene)

G. Juška; K. Arlauskas; Ronald Österbacka; Henrik Sandberg; Henrik Stubb

doi:10.1016/S0379-6779(98)01203-X

Charge carrier mobility in Langmuir-Blodgett films of poly (3-hexylthiophene)

G. Juška
, K. Arlauskas
, Ronald Österbacka
, Henrik Sandberg
, Henrik Stubb

Not published at VTT

Research output: Contribution to journal › Article › Scientific › peer-review

1 Citation (Scopus)

Abstract

The tendency to saturation in the collected charge as a function of light intensity in Langmuir-Blodgett films of poly(3-hexylthiophene) (PHT) has been studied. The tendency to saturation can have two reasons; that the space charge limited current regime has been reached, or influence of very fast bimolecular recombination. We have studied these two cases, and we conclude that bimolecular recombination is a probable cause for the tendency to saturation. The hole mobility in PHT can therefore possibly be estimated as high as 1 cm2/Vs in the initial stage after photoexcitation.

Original language	English
Pages (from-to)	88-89
Journal	Synthetic Metals
Volume	101
Issue number	1
DOIs	https://doi.org/10.1016/S0379-6779(98)01203-X
Publication status	Published - 1999
MoE publication type	A1 Journal article-refereed

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@article{66c554c2c2a34386a0107bb6fc183a87,

title = "Charge carrier mobility in Langmuir-Blodgett films of poly (3-hexylthiophene)",

abstract = "The tendency to saturation in the collected charge as a function of light intensity in Langmuir-Blodgett films of poly(3-hexylthiophene) (PHT) has been studied. The tendency to saturation can have two reasons; that the space charge limited current regime has been reached, or influence of very fast bimolecular recombination. We have studied these two cases, and we conclude that bimolecular recombination is a probable cause for the tendency to saturation. The hole mobility in PHT can therefore possibly be estimated as high as 1 cm2/Vs in the initial stage after photoexcitation.",

author = "G. Ju{\v s}ka and K. Arlauskas and Ronald {\"O}sterbacka and Henrik Sandberg and Henrik Stubb",

year = "1999",

doi = "10.1016/S0379-6779(98)01203-X",

language = "English",

volume = "101",

pages = "88--89",

journal = "Synthetic Metals",

issn = "0379-6779",

publisher = "Elsevier",

number = "1",

}

TY - JOUR

T1 - Charge carrier mobility in Langmuir-Blodgett films of poly (3-hexylthiophene)

AU - Juška, G.

AU - Arlauskas, K.

AU - Österbacka, Ronald

AU - Sandberg, Henrik

AU - Stubb, Henrik

PY - 1999

Y1 - 1999

N2 - The tendency to saturation in the collected charge as a function of light intensity in Langmuir-Blodgett films of poly(3-hexylthiophene) (PHT) has been studied. The tendency to saturation can have two reasons; that the space charge limited current regime has been reached, or influence of very fast bimolecular recombination. We have studied these two cases, and we conclude that bimolecular recombination is a probable cause for the tendency to saturation. The hole mobility in PHT can therefore possibly be estimated as high as 1 cm2/Vs in the initial stage after photoexcitation.

AB - The tendency to saturation in the collected charge as a function of light intensity in Langmuir-Blodgett films of poly(3-hexylthiophene) (PHT) has been studied. The tendency to saturation can have two reasons; that the space charge limited current regime has been reached, or influence of very fast bimolecular recombination. We have studied these two cases, and we conclude that bimolecular recombination is a probable cause for the tendency to saturation. The hole mobility in PHT can therefore possibly be estimated as high as 1 cm2/Vs in the initial stage after photoexcitation.

UR - https://www.scopus.com/pages/publications/0032597460

U2 - 10.1016/S0379-6779(98)01203-X

DO - 10.1016/S0379-6779(98)01203-X

M3 - Article

SN - 0379-6779

VL - 101

SP - 88

EP - 89

JO - Synthetic Metals

JF - Synthetic Metals

IS - 1

ER -

Charge carrier mobility in Langmuir-Blodgett films of poly (3-hexylthiophene)

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