Charge collection characterization of a 3D silicon radiation detector by using 3D simulations

Juha Kalliopuska, Simo Eränen, Risto Orava

Research output: Contribution to journalArticleScientificpeer-review

1 Citation (Scopus)

Abstract

In 3D detectors, the electrodes are processed within the bulk of the sensor material. Therefore, the signal charge is collected independently of the wafer thickness and the collection process is faster due to shorter distances between the charge collection electrodes as compared to a planar detector. In this paper, 3D simulations are used to assess the performance of a 3D detector structure in terms of charge sharing, efficiency and speed of charge collection, surface charge, location of the primary interaction and the bias voltage. The measured current pulse is proposed to be delayed due to the resistance–capacitance (RC) product induced by the variation of the serial resistance of the pixel electrode depending on the depth of the primary interaction. Extensive simulations are carried out to characterize the 3D detector structures and to verify the proposed explanation for the delay of the current pulse. A method for testing the hypothesis experimentally is suggested
Original languageEnglish
Pages (from-to)292-296
JournalNuclear Instruments and Methods in Physics Research. Section A: Accelerators, Spectrometers, Detectors and Associated Equipment
Volume572
Issue number1
DOIs
Publication statusPublished - 2007
MoE publication typeA1 Journal article-refereed

Fingerprint

silicon radiation detectors
Silicon detectors
Radiation detectors
Detectors
detectors
Electrodes
electrodes
simulation
Surface charge
Bias voltage
pulses
Pixels
pixels
interactions
wafers
sensors
Sensors
Testing
electric potential
products

Keywords

  • silicon radiation detectors
  • 3D detectors
  • charge collection characteristics
  • charge sharing

Cite this

@article{e9c20b7136c94dcca107a29d73528b13,
title = "Charge collection characterization of a 3D silicon radiation detector by using 3D simulations",
abstract = "In 3D detectors, the electrodes are processed within the bulk of the sensor material. Therefore, the signal charge is collected independently of the wafer thickness and the collection process is faster due to shorter distances between the charge collection electrodes as compared to a planar detector. In this paper, 3D simulations are used to assess the performance of a 3D detector structure in terms of charge sharing, efficiency and speed of charge collection, surface charge, location of the primary interaction and the bias voltage. The measured current pulse is proposed to be delayed due to the resistance–capacitance (RC) product induced by the variation of the serial resistance of the pixel electrode depending on the depth of the primary interaction. Extensive simulations are carried out to characterize the 3D detector structures and to verify the proposed explanation for the delay of the current pulse. A method for testing the hypothesis experimentally is suggested",
keywords = "silicon radiation detectors, 3D detectors, charge collection characteristics, charge sharing",
author = "Juha Kalliopuska and Simo Er{\"a}nen and Risto Orava",
note = "Project code: 5061",
year = "2007",
doi = "10.1016/j.nima.2006.10.370",
language = "English",
volume = "572",
pages = "292--296",
journal = "Nuclear Instruments and Methods in Physics Research. Section A: Accelerators, Spectrometers, Detectors and Associated Equipment",
issn = "0168-9002",
publisher = "Elsevier",
number = "1",

}

Charge collection characterization of a 3D silicon radiation detector by using 3D simulations. / Kalliopuska, Juha; Eränen, Simo; Orava, Risto.

In: Nuclear Instruments and Methods in Physics Research. Section A: Accelerators, Spectrometers, Detectors and Associated Equipment, Vol. 572, No. 1, 2007, p. 292-296.

Research output: Contribution to journalArticleScientificpeer-review

TY - JOUR

T1 - Charge collection characterization of a 3D silicon radiation detector by using 3D simulations

AU - Kalliopuska, Juha

AU - Eränen, Simo

AU - Orava, Risto

N1 - Project code: 5061

PY - 2007

Y1 - 2007

N2 - In 3D detectors, the electrodes are processed within the bulk of the sensor material. Therefore, the signal charge is collected independently of the wafer thickness and the collection process is faster due to shorter distances between the charge collection electrodes as compared to a planar detector. In this paper, 3D simulations are used to assess the performance of a 3D detector structure in terms of charge sharing, efficiency and speed of charge collection, surface charge, location of the primary interaction and the bias voltage. The measured current pulse is proposed to be delayed due to the resistance–capacitance (RC) product induced by the variation of the serial resistance of the pixel electrode depending on the depth of the primary interaction. Extensive simulations are carried out to characterize the 3D detector structures and to verify the proposed explanation for the delay of the current pulse. A method for testing the hypothesis experimentally is suggested

AB - In 3D detectors, the electrodes are processed within the bulk of the sensor material. Therefore, the signal charge is collected independently of the wafer thickness and the collection process is faster due to shorter distances between the charge collection electrodes as compared to a planar detector. In this paper, 3D simulations are used to assess the performance of a 3D detector structure in terms of charge sharing, efficiency and speed of charge collection, surface charge, location of the primary interaction and the bias voltage. The measured current pulse is proposed to be delayed due to the resistance–capacitance (RC) product induced by the variation of the serial resistance of the pixel electrode depending on the depth of the primary interaction. Extensive simulations are carried out to characterize the 3D detector structures and to verify the proposed explanation for the delay of the current pulse. A method for testing the hypothesis experimentally is suggested

KW - silicon radiation detectors

KW - 3D detectors

KW - charge collection characteristics

KW - charge sharing

U2 - 10.1016/j.nima.2006.10.370

DO - 10.1016/j.nima.2006.10.370

M3 - Article

VL - 572

SP - 292

EP - 296

JO - Nuclear Instruments and Methods in Physics Research. Section A: Accelerators, Spectrometers, Detectors and Associated Equipment

JF - Nuclear Instruments and Methods in Physics Research. Section A: Accelerators, Spectrometers, Detectors and Associated Equipment

SN - 0168-9002

IS - 1

ER -