INIS
simulation
100%
charges
100%
electrodes
100%
si semiconductor detectors
100%
charge collection
100%
interactions
66%
pulses
66%
performance
33%
comparative evaluations
33%
efficiency
33%
surfaces
33%
thickness
33%
speed
33%
voltage
33%
sensors
33%
variations
33%
depth
33%
signals
33%
testing
33%
distance
33%
hypothesis
33%
Keyphrases
3D Detectors
100%
3D Simulation
100%
Charge Collection
100%
Silicon Radiation Detectors
100%
3D Silicon
100%
Current Pulse
66%
Detector Structure
66%
Bias Voltage
33%
Surface Charge
33%
Collection Method
33%
Shortest Distance
33%
Wafer Thickness
33%
Charge Sharing
33%
Planar Detector
33%
Pixel Electrode
33%
Sensor Materials
33%
Serial Resistance
33%
Engineering
Current Pulse
100%
3d Simulation
100%
Radiation Detector
100%
Bias Voltage
50%
Collection Surface
50%
Sensor Material
50%