Chemical stability of Ta diffusion barrier between Cu and Si

T. Laurila, K. Zeng, Jorma Kivilahti, Jyrki Molarius, Ilkka Suni

Research output: Contribution to journalArticleScientificpeer-review

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Abstract

The reactions in the Si/Ta/Cu metallization system produced by the sputtering process were investigated by means of sheet resistance measurements, X-ray diffraction (XRD), Rutherford backscattering spectroscopy (RBS), scanning electron microscopy (SEM) and optical microscopy. In particular, the reaction sequence was emphasized. The reaction mechanisms and their relation to the microstructure and defect density of the thin films are discussed on the basis of the experimental results and the assessed ternary Si–Ta–Cu phase diagram at 700°C. It was found out that the effectiveness of the Ta barrier is mainly governed by the defect density and their distribution in the Ta film. The failure was induced by the Cu diffusion through the Ta film and almost simultaneous formation of Cu3Si and TaSi2.

Original languageEnglish
Pages (from-to)64 - 67
Number of pages4
JournalThin Solid Films
Volume373
Issue number1-2
DOIs
Publication statusPublished - 2000
MoE publication typeA1 Journal article-refereed

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Diffusion barriers
Defect density
Chemical stability
Sheet resistance
Rutherford backscattering spectroscopy
Metallizing
Phase diagrams
Optical microscopy
Sputtering
defects
X ray diffraction
Thin films
Microstructure
Scanning electron microscopy
density distribution
backscattering
sputtering
phase diagrams
microscopy
microstructure

Cite this

Laurila, T., Zeng, K., Kivilahti, J., Molarius, J., & Suni, I. (2000). Chemical stability of Ta diffusion barrier between Cu and Si. Thin Solid Films, 373(1-2), 64 - 67. https://doi.org/10.1016/S0040-6090(00)01102-0
Laurila, T. ; Zeng, K. ; Kivilahti, Jorma ; Molarius, Jyrki ; Suni, Ilkka. / Chemical stability of Ta diffusion barrier between Cu and Si. In: Thin Solid Films. 2000 ; Vol. 373, No. 1-2. pp. 64 - 67.
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Laurila, T, Zeng, K, Kivilahti, J, Molarius, J & Suni, I 2000, 'Chemical stability of Ta diffusion barrier between Cu and Si', Thin Solid Films, vol. 373, no. 1-2, pp. 64 - 67. https://doi.org/10.1016/S0040-6090(00)01102-0

Chemical stability of Ta diffusion barrier between Cu and Si. / Laurila, T.; Zeng, K.; Kivilahti, Jorma; Molarius, Jyrki; Suni, Ilkka.

In: Thin Solid Films, Vol. 373, No. 1-2, 2000, p. 64 - 67.

Research output: Contribution to journalArticleScientificpeer-review

TY - JOUR

T1 - Chemical stability of Ta diffusion barrier between Cu and Si

AU - Laurila, T.

AU - Zeng, K.

AU - Kivilahti, Jorma

AU - Molarius, Jyrki

AU - Suni, Ilkka

PY - 2000

Y1 - 2000

N2 - The reactions in the Si/Ta/Cu metallization system produced by the sputtering process were investigated by means of sheet resistance measurements, X-ray diffraction (XRD), Rutherford backscattering spectroscopy (RBS), scanning electron microscopy (SEM) and optical microscopy. In particular, the reaction sequence was emphasized. The reaction mechanisms and their relation to the microstructure and defect density of the thin films are discussed on the basis of the experimental results and the assessed ternary Si–Ta–Cu phase diagram at 700°C. It was found out that the effectiveness of the Ta barrier is mainly governed by the defect density and their distribution in the Ta film. The failure was induced by the Cu diffusion through the Ta film and almost simultaneous formation of Cu3Si and TaSi2.

AB - The reactions in the Si/Ta/Cu metallization system produced by the sputtering process were investigated by means of sheet resistance measurements, X-ray diffraction (XRD), Rutherford backscattering spectroscopy (RBS), scanning electron microscopy (SEM) and optical microscopy. In particular, the reaction sequence was emphasized. The reaction mechanisms and their relation to the microstructure and defect density of the thin films are discussed on the basis of the experimental results and the assessed ternary Si–Ta–Cu phase diagram at 700°C. It was found out that the effectiveness of the Ta barrier is mainly governed by the defect density and their distribution in the Ta film. The failure was induced by the Cu diffusion through the Ta film and almost simultaneous formation of Cu3Si and TaSi2.

U2 - 10.1016/S0040-6090(00)01102-0

DO - 10.1016/S0040-6090(00)01102-0

M3 - Article

VL - 373

SP - 64

EP - 67

JO - Thin Solid Films

JF - Thin Solid Films

SN - 0040-6090

IS - 1-2

ER -