CMOS compatible switched MEMS capacitors up to 220 GHz applications

Tauno Vähä-Heikkilä; Mari Ylönen

doi:10.1109/EUMC.2006.281116

CMOS compatible switched MEMS capacitors up to 220 GHz applications

Research output: Chapter in Book/Report/Conference proceeding › Conference article in proceedings › Scientific › peer-review

9 Citations (Scopus)

Abstract

Very wideband switched MEMS capacitors have been designed and fabricated using CMOS compatible surface micromachining process. On-wafer measurement results are presented at G-band (140-220 GHz) up to 220 GHz showing that MEMS components can be modelled accurately with lumped elements and transmission line models.

Original language	English
Title of host publication	Proceedings of the 36th European Microwave Conference
Subtitle of host publication	Manchester, UK, 10-15 September 2006
Publisher	IEEE Institute of Electrical and Electronic Engineers
Pages	1060-1063
ISBN (Print)	2-9600551-6-0
DOIs	https://doi.org/10.1109/EUMC.2006.281116
Publication status	Published - 2006
MoE publication type	A4 Article in a conference publication

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10.1109/EUMC.2006.281116

Cite this

@inproceedings{e48976a247414df7b587046644ebf300,

title = "CMOS compatible switched MEMS capacitors up to 220 GHz applications",

abstract = "Very wideband switched MEMS capacitors have been designed and fabricated using CMOS compatible surface micromachining process. On-wafer measurement results are presented at G-band (140-220 GHz) up to 220 GHz showing that MEMS components can be modelled accurately with lumped elements and transmission line models.",

author = "Tauno V{\"a}h{\"a}-Heikkil{\"a} and Mari Yl{\"o}nen",

year = "2006",

doi = "10.1109/EUMC.2006.281116",

language = "English",

isbn = "2-9600551-6-0",

pages = "1060--1063",

booktitle = "Proceedings of the 36th European Microwave Conference",

publisher = "IEEE Institute of Electrical and Electronic Engineers",

address = "United States",

}

CMOS compatible switched MEMS capacitors up to 220 GHz applications. / Vähä-Heikkilä, Tauno; Ylönen, Mari.
Proceedings of the 36th European Microwave Conference: Manchester, UK, 10-15 September 2006. IEEE Institute of Electrical and Electronic Engineers, 2006. p. 1060-1063.

Research output: Chapter in Book/Report/Conference proceeding › Conference article in proceedings › Scientific › peer-review

TY - GEN

T1 - CMOS compatible switched MEMS capacitors up to 220 GHz applications

AU - Vähä-Heikkilä, Tauno

AU - Ylönen, Mari

PY - 2006

Y1 - 2006

N2 - Very wideband switched MEMS capacitors have been designed and fabricated using CMOS compatible surface micromachining process. On-wafer measurement results are presented at G-band (140-220 GHz) up to 220 GHz showing that MEMS components can be modelled accurately with lumped elements and transmission line models.

AB - Very wideband switched MEMS capacitors have been designed and fabricated using CMOS compatible surface micromachining process. On-wafer measurement results are presented at G-band (140-220 GHz) up to 220 GHz showing that MEMS components can be modelled accurately with lumped elements and transmission line models.

U2 - 10.1109/EUMC.2006.281116

DO - 10.1109/EUMC.2006.281116

M3 - Conference article in proceedings

SN - 2-9600551-6-0

SP - 1060

EP - 1063

BT - Proceedings of the 36th European Microwave Conference

PB - IEEE Institute of Electrical and Electronic Engineers

ER -

CMOS compatible switched MEMS capacitors up to 220 GHz applications

Abstract

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