Very wideband switched MEMS capacitors have been designed and fabricated using CMOS compatible surface micromachining process. On-wafer measurement results are presented at G-band (140-220 GHz) up to 220 GHz showing that MEMS components can be modelled accurately with lumped elements and transmission line models.
|Title of host publication||Proceedings of the 36th European Microwave Conference|
|Subtitle of host publication||Manchester, UK, 10-15 September 2006|
|Publisher||IEEE Institute of Electrical and Electronic Engineers|
|Publication status||Published - 2006|
|MoE publication type||A4 Article in a conference publication|
Vähä-Heikkilä, T., & Ylönen, M. (2006). CMOS compatible switched MEMS capacitors up to 220 GHz applications. In Proceedings of the 36th European Microwave Conference: Manchester, UK, 10-15 September 2006 (pp. 1060-1063). IEEE Institute of Electrical and Electronic Engineers . https://doi.org/10.1109/EUMC.2006.281116