Coated porous Si for high performance on-chip supercapacitors

Kestutis Grigoras, Jari Keskinen, Leif Grönberg, Jouni Ahopelto, Mika Prunnila (Corresponding Author)

    Research output: Contribution to journalArticleScientificpeer-review

    21 Citations (Scopus)


    High performance porous Si based supercapacitor electrodes are demonstrated. High power density and stability is provided by ultra-thin TiN coating of the porous Si matrix. The TiN layer is deposited by atomic layer deposition (ALD), which provides sufficient conformality to reach the bottom of the high aspect ratio pores. Our porous Si supercapacitor devices exhibit almost ideal double layer capacitor characteristic with electrode volumetric capacitance of 7.3 F/cm3. Several orders of magnitude increase in power and energy density is obtained comparing to uncoated porous silicon electrodes. Good stability of devices is confirmed performing several thousands of charge/discharge cycles.
    Original languageEnglish
    Article number012058
    Number of pages4
    JournalJournal of Physics: Conference Series
    Issue numberConference 1
    Publication statusPublished - 2014
    MoE publication typeA1 Journal article-refereed
    Event14th International Conference on Micro and Nanotechnology for Power Generation and Energy Conversion Applications, PowerMEMS 2014 - Hyogo, Japan
    Duration: 18 Nov 201421 Nov 2014


    • porous silicon
    • ALD
    • supercapacitor
    • in-chip device


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