Coated porous Si for high performance on-chip supercapacitors

Kestutis Grigoras, Jari Keskinen, Leif Grönberg, Jouni Ahopelto, Mika Prunnila (Corresponding Author)

    Research output: Contribution to journalArticleScientificpeer-review

    15 Citations (Scopus)

    Abstract

    High performance porous Si based supercapacitor electrodes are demonstrated. High power density and stability is provided by ultra-thin TiN coating of the porous Si matrix. The TiN layer is deposited by atomic layer deposition (ALD), which provides sufficient conformality to reach the bottom of the high aspect ratio pores. Our porous Si supercapacitor devices exhibit almost ideal double layer capacitor characteristic with electrode volumetric capacitance of 7.3 F/cm3. Several orders of magnitude increase in power and energy density is obtained comparing to uncoated porous silicon electrodes. Good stability of devices is confirmed performing several thousands of charge/discharge cycles.
    Original languageEnglish
    Article number012058
    Number of pages4
    JournalJournal of Physics: Conference Series
    Volume557
    Issue numberConference 1
    DOIs
    Publication statusPublished - 2014
    MoE publication typeA1 Journal article-refereed
    Event14th International Conference on Micro and Nanotechnology for Power Generation and Energy Conversion Applications, PowerMEMS 2014 - Hyogo, Japan
    Duration: 18 Nov 201421 Nov 2014

    Fingerprint

    electrochemical capacitors
    chips
    electrodes
    radiant flux density
    atomic layer epitaxy
    high aspect ratio
    porous silicon
    flux density
    capacitance
    porosity
    coatings
    cycles
    matrices

    Keywords

    • porous silicon
    • ALD
    • supercapacitor
    • in-chip device

    Cite this

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    title = "Coated porous Si for high performance on-chip supercapacitors",
    abstract = "High performance porous Si based supercapacitor electrodes are demonstrated. High power density and stability is provided by ultra-thin TiN coating of the porous Si matrix. The TiN layer is deposited by atomic layer deposition (ALD), which provides sufficient conformality to reach the bottom of the high aspect ratio pores. Our porous Si supercapacitor devices exhibit almost ideal double layer capacitor characteristic with electrode volumetric capacitance of 7.3 F/cm3. Several orders of magnitude increase in power and energy density is obtained comparing to uncoated porous silicon electrodes. Good stability of devices is confirmed performing several thousands of charge/discharge cycles.",
    keywords = "porous silicon, ALD, supercapacitor, in-chip device",
    author = "Kestutis Grigoras and Jari Keskinen and Leif Gr{\"o}nberg and Jouni Ahopelto and Mika Prunnila",
    note = "CA2: BA1114 Project code: 73742",
    year = "2014",
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    language = "English",
    volume = "557",
    journal = "Journal of Physics: Conference Series",
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    Coated porous Si for high performance on-chip supercapacitors. / Grigoras, Kestutis; Keskinen, Jari; Grönberg, Leif; Ahopelto, Jouni; Prunnila, Mika (Corresponding Author).

    In: Journal of Physics: Conference Series, Vol. 557, No. Conference 1, 012058, 2014.

    Research output: Contribution to journalArticleScientificpeer-review

    TY - JOUR

    T1 - Coated porous Si for high performance on-chip supercapacitors

    AU - Grigoras, Kestutis

    AU - Keskinen, Jari

    AU - Grönberg, Leif

    AU - Ahopelto, Jouni

    AU - Prunnila, Mika

    N1 - CA2: BA1114 Project code: 73742

    PY - 2014

    Y1 - 2014

    N2 - High performance porous Si based supercapacitor electrodes are demonstrated. High power density and stability is provided by ultra-thin TiN coating of the porous Si matrix. The TiN layer is deposited by atomic layer deposition (ALD), which provides sufficient conformality to reach the bottom of the high aspect ratio pores. Our porous Si supercapacitor devices exhibit almost ideal double layer capacitor characteristic with electrode volumetric capacitance of 7.3 F/cm3. Several orders of magnitude increase in power and energy density is obtained comparing to uncoated porous silicon electrodes. Good stability of devices is confirmed performing several thousands of charge/discharge cycles.

    AB - High performance porous Si based supercapacitor electrodes are demonstrated. High power density and stability is provided by ultra-thin TiN coating of the porous Si matrix. The TiN layer is deposited by atomic layer deposition (ALD), which provides sufficient conformality to reach the bottom of the high aspect ratio pores. Our porous Si supercapacitor devices exhibit almost ideal double layer capacitor characteristic with electrode volumetric capacitance of 7.3 F/cm3. Several orders of magnitude increase in power and energy density is obtained comparing to uncoated porous silicon electrodes. Good stability of devices is confirmed performing several thousands of charge/discharge cycles.

    KW - porous silicon

    KW - ALD

    KW - supercapacitor

    KW - in-chip device

    U2 - 10.1088/1742-6596/557/1/012058

    DO - 10.1088/1742-6596/557/1/012058

    M3 - Article

    VL - 557

    JO - Journal of Physics: Conference Series

    JF - Journal of Physics: Conference Series

    SN - 1742-6588

    IS - Conference 1

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