Coated porous Si for high performance on-chip supercapacitors

Kestutis Grigoras, Jari Keskinen, Leif Grönberg, Jouni Ahopelto, Mika Prunnila (Corresponding Author)

Research output: Contribution to journalArticleScientificpeer-review

15 Citations (Scopus)

Abstract

High performance porous Si based supercapacitor electrodes are demonstrated. High power density and stability is provided by ultra-thin TiN coating of the porous Si matrix. The TiN layer is deposited by atomic layer deposition (ALD), which provides sufficient conformality to reach the bottom of the high aspect ratio pores. Our porous Si supercapacitor devices exhibit almost ideal double layer capacitor characteristic with electrode volumetric capacitance of 7.3 F/cm3. Several orders of magnitude increase in power and energy density is obtained comparing to uncoated porous silicon electrodes. Good stability of devices is confirmed performing several thousands of charge/discharge cycles.
Original languageEnglish
Article number012058
Number of pages4
JournalJournal of Physics: Conference Series
Volume557
Issue numberConference 1
DOIs
Publication statusPublished - 2014
MoE publication typeA1 Journal article-refereed
Event14th International Conference on Micro and Nanotechnology for Power Generation and Energy Conversion Applications, PowerMEMS 2014 - Hyogo, Japan
Duration: 18 Nov 201421 Nov 2014

Fingerprint

electrochemical capacitors
chips
electrodes
radiant flux density
atomic layer epitaxy
high aspect ratio
porous silicon
flux density
capacitance
porosity
coatings
cycles
matrices

Keywords

  • porous silicon
  • ALD
  • supercapacitor
  • in-chip device

Cite this

@article{16f8449f26fc4e669ba5f105cfb5230d,
title = "Coated porous Si for high performance on-chip supercapacitors",
abstract = "High performance porous Si based supercapacitor electrodes are demonstrated. High power density and stability is provided by ultra-thin TiN coating of the porous Si matrix. The TiN layer is deposited by atomic layer deposition (ALD), which provides sufficient conformality to reach the bottom of the high aspect ratio pores. Our porous Si supercapacitor devices exhibit almost ideal double layer capacitor characteristic with electrode volumetric capacitance of 7.3 F/cm3. Several orders of magnitude increase in power and energy density is obtained comparing to uncoated porous silicon electrodes. Good stability of devices is confirmed performing several thousands of charge/discharge cycles.",
keywords = "porous silicon, ALD, supercapacitor, in-chip device",
author = "Kestutis Grigoras and Jari Keskinen and Leif Gr{\"o}nberg and Jouni Ahopelto and Mika Prunnila",
note = "CA2: BA1114 Project code: 73742",
year = "2014",
doi = "10.1088/1742-6596/557/1/012058",
language = "English",
volume = "557",
journal = "Journal of Physics: Conference Series",
issn = "1742-6588",
publisher = "Institute of Physics IOP",
number = "Conference 1",

}

Coated porous Si for high performance on-chip supercapacitors. / Grigoras, Kestutis; Keskinen, Jari; Grönberg, Leif; Ahopelto, Jouni; Prunnila, Mika (Corresponding Author).

In: Journal of Physics: Conference Series, Vol. 557, No. Conference 1, 012058, 2014.

Research output: Contribution to journalArticleScientificpeer-review

TY - JOUR

T1 - Coated porous Si for high performance on-chip supercapacitors

AU - Grigoras, Kestutis

AU - Keskinen, Jari

AU - Grönberg, Leif

AU - Ahopelto, Jouni

AU - Prunnila, Mika

N1 - CA2: BA1114 Project code: 73742

PY - 2014

Y1 - 2014

N2 - High performance porous Si based supercapacitor electrodes are demonstrated. High power density and stability is provided by ultra-thin TiN coating of the porous Si matrix. The TiN layer is deposited by atomic layer deposition (ALD), which provides sufficient conformality to reach the bottom of the high aspect ratio pores. Our porous Si supercapacitor devices exhibit almost ideal double layer capacitor characteristic with electrode volumetric capacitance of 7.3 F/cm3. Several orders of magnitude increase in power and energy density is obtained comparing to uncoated porous silicon electrodes. Good stability of devices is confirmed performing several thousands of charge/discharge cycles.

AB - High performance porous Si based supercapacitor electrodes are demonstrated. High power density and stability is provided by ultra-thin TiN coating of the porous Si matrix. The TiN layer is deposited by atomic layer deposition (ALD), which provides sufficient conformality to reach the bottom of the high aspect ratio pores. Our porous Si supercapacitor devices exhibit almost ideal double layer capacitor characteristic with electrode volumetric capacitance of 7.3 F/cm3. Several orders of magnitude increase in power and energy density is obtained comparing to uncoated porous silicon electrodes. Good stability of devices is confirmed performing several thousands of charge/discharge cycles.

KW - porous silicon

KW - ALD

KW - supercapacitor

KW - in-chip device

U2 - 10.1088/1742-6596/557/1/012058

DO - 10.1088/1742-6596/557/1/012058

M3 - Article

VL - 557

JO - Journal of Physics: Conference Series

JF - Journal of Physics: Conference Series

SN - 1742-6588

IS - Conference 1

M1 - 012058

ER -