Cold ion-cutting of hydrogen implanted Si

Kimmo Henttinen (Corresponding Author), Tommi Suni, Arto Nurmela, Ilkka Suni (Corresponding Author), S. Lau, T. Höchbauer, M. Nastasi, V.-M. Airaksinen

Research output: Contribution to journalArticleScientificpeer-review

20 Citations (Scopus)

Abstract

The strength of the H-implanted layer has been measured in <1 0 0>, <1 1 1> and <1 1 0> oriented Si wafers using the crack opening method. The required annealing temperature for mechanical layer transfer increases in the order <1 0 0>, <1 1 1> and <1 1 0>. The damage induced by the implantation has been studied by Rutherford backscattering in the channeling mode (RBS/C). The same methods have been used to investigate the influence of boron and arsenic doping on the mechanical exfoliation. Boron doping reduces the strength of the H-implanted layer thereby enabling mechanical layer transfer at temperatures below 200 °C. We found that the exfoliation takes place closer to the wafer surface in highly boron doped Si as compared to the undoped Si. The RBS damage peak also appears to move closer to the surface when the boron concentration of the H-implanted layer is >1019 cm-3. No lowering of the exfoliation temperature was observed for compensated and arsenic doped Si layers. We suggest that the lowering of the exfoliation temperature with increasing boron doping is related to Si H bonds associated with the neutralization of shallow acceptors by hydrogen.
Original languageEnglish
Pages (from-to)761-766
JournalNuclear Instruments and Methods in Physics Research. Section B: Beam Interactions with Materials and Atoms
Volume190
Issue number1-4
DOIs
Publication statusPublished - 2002
MoE publication typeA1 Journal article-refereed

Fingerprint

Boron
boron
Hydrogen
Ions
hydrogen
Doping (additives)
ions
Arsenic
arsenic
Temperature
wafers
damage
Rutherford backscattering spectroscopy
temperature
Annealing
implantation
backscattering
Cracks
cracks
annealing

Keywords

  • silicon on insulator
  • hydrogen implantation
  • ion channeling
  • wafer bonding

Cite this

Henttinen, Kimmo ; Suni, Tommi ; Nurmela, Arto ; Suni, Ilkka ; Lau, S. ; Höchbauer, T. ; Nastasi, M. ; Airaksinen, V.-M. / Cold ion-cutting of hydrogen implanted Si. In: Nuclear Instruments and Methods in Physics Research. Section B: Beam Interactions with Materials and Atoms. 2002 ; Vol. 190, No. 1-4. pp. 761-766.
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abstract = "The strength of the H-implanted layer has been measured in <1 0 0>, <1 1 1> and <1 1 0> oriented Si wafers using the crack opening method. The required annealing temperature for mechanical layer transfer increases in the order <1 0 0>, <1 1 1> and <1 1 0>. The damage induced by the implantation has been studied by Rutherford backscattering in the channeling mode (RBS/C). The same methods have been used to investigate the influence of boron and arsenic doping on the mechanical exfoliation. Boron doping reduces the strength of the H-implanted layer thereby enabling mechanical layer transfer at temperatures below 200 °C. We found that the exfoliation takes place closer to the wafer surface in highly boron doped Si as compared to the undoped Si. The RBS damage peak also appears to move closer to the surface when the boron concentration of the H-implanted layer is >1019 cm-3. No lowering of the exfoliation temperature was observed for compensated and arsenic doped Si layers. We suggest that the lowering of the exfoliation temperature with increasing boron doping is related to Si H bonds associated with the neutralization of shallow acceptors by hydrogen.",
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author = "Kimmo Henttinen and Tommi Suni and Arto Nurmela and Ilkka Suni and S. Lau and T. H{\"o}chbauer and M. Nastasi and V.-M. Airaksinen",
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Henttinen, K, Suni, T, Nurmela, A, Suni, I, Lau, S, Höchbauer, T, Nastasi, M & Airaksinen, V-M 2002, 'Cold ion-cutting of hydrogen implanted Si', Nuclear Instruments and Methods in Physics Research. Section B: Beam Interactions with Materials and Atoms, vol. 190, no. 1-4, pp. 761-766. https://doi.org/10.1016/S0168-583X(01)01209-5

Cold ion-cutting of hydrogen implanted Si. / Henttinen, Kimmo (Corresponding Author); Suni, Tommi; Nurmela, Arto; Suni, Ilkka (Corresponding Author); Lau, S.; Höchbauer, T.; Nastasi, M.; Airaksinen, V.-M.

In: Nuclear Instruments and Methods in Physics Research. Section B: Beam Interactions with Materials and Atoms, Vol. 190, No. 1-4, 2002, p. 761-766.

Research output: Contribution to journalArticleScientificpeer-review

TY - JOUR

T1 - Cold ion-cutting of hydrogen implanted Si

AU - Henttinen, Kimmo

AU - Suni, Tommi

AU - Nurmela, Arto

AU - Suni, Ilkka

AU - Lau, S.

AU - Höchbauer, T.

AU - Nastasi, M.

AU - Airaksinen, V.-M.

N1 - Project code: T2SU00141

PY - 2002

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N2 - The strength of the H-implanted layer has been measured in <1 0 0>, <1 1 1> and <1 1 0> oriented Si wafers using the crack opening method. The required annealing temperature for mechanical layer transfer increases in the order <1 0 0>, <1 1 1> and <1 1 0>. The damage induced by the implantation has been studied by Rutherford backscattering in the channeling mode (RBS/C). The same methods have been used to investigate the influence of boron and arsenic doping on the mechanical exfoliation. Boron doping reduces the strength of the H-implanted layer thereby enabling mechanical layer transfer at temperatures below 200 °C. We found that the exfoliation takes place closer to the wafer surface in highly boron doped Si as compared to the undoped Si. The RBS damage peak also appears to move closer to the surface when the boron concentration of the H-implanted layer is >1019 cm-3. No lowering of the exfoliation temperature was observed for compensated and arsenic doped Si layers. We suggest that the lowering of the exfoliation temperature with increasing boron doping is related to Si H bonds associated with the neutralization of shallow acceptors by hydrogen.

AB - The strength of the H-implanted layer has been measured in <1 0 0>, <1 1 1> and <1 1 0> oriented Si wafers using the crack opening method. The required annealing temperature for mechanical layer transfer increases in the order <1 0 0>, <1 1 1> and <1 1 0>. The damage induced by the implantation has been studied by Rutherford backscattering in the channeling mode (RBS/C). The same methods have been used to investigate the influence of boron and arsenic doping on the mechanical exfoliation. Boron doping reduces the strength of the H-implanted layer thereby enabling mechanical layer transfer at temperatures below 200 °C. We found that the exfoliation takes place closer to the wafer surface in highly boron doped Si as compared to the undoped Si. The RBS damage peak also appears to move closer to the surface when the boron concentration of the H-implanted layer is >1019 cm-3. No lowering of the exfoliation temperature was observed for compensated and arsenic doped Si layers. We suggest that the lowering of the exfoliation temperature with increasing boron doping is related to Si H bonds associated with the neutralization of shallow acceptors by hydrogen.

KW - silicon on insulator

KW - hydrogen implantation

KW - ion channeling

KW - wafer bonding

U2 - 10.1016/S0168-583X(01)01209-5

DO - 10.1016/S0168-583X(01)01209-5

M3 - Article

VL - 190

SP - 761

EP - 766

JO - Nuclear Instruments and Methods in Physics Research. Section B: Beam Interactions with Materials and Atoms

JF - Nuclear Instruments and Methods in Physics Research. Section B: Beam Interactions with Materials and Atoms

SN - 0168-583X

IS - 1-4

ER -