Combined SUPREM and MINIMOS Simulations of LDMOS Structure in IGBT

Gyözö Drozdy, Simo Eränen, Hannu Ronkainen

Research output: Contribution to journalArticleScientificpeer-review

Abstract

The MINIMOS modeling capability was extended to lateral double diffused MOS-transistors. With combined use of MINIMOS, SUPREM and a newly developed interface program we have got a helpful tool for designing the technology and device structure of the Insulated Gate Bipolar Transistor. The calculated characteristics of the lateral double diffused MOS-transistor were in acceptable agreement with the measurements.
Original languageEnglish
Pages (from-to)131-132
JournalPhysica Scripta
Volume1990
Issue numberT33
DOIs
Publication statusPublished - 1990
MoE publication typeA1 Journal article-refereed

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Lateral
transistors
bipolar transistors
Simulation
simulation
Modeling

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Drozdy, Gyözö ; Eränen, Simo ; Ronkainen, Hannu. / Combined SUPREM and MINIMOS Simulations of LDMOS Structure in IGBT. In: Physica Scripta. 1990 ; Vol. 1990, No. T33. pp. 131-132.
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abstract = "The MINIMOS modeling capability was extended to lateral double diffused MOS-transistors. With combined use of MINIMOS, SUPREM and a newly developed interface program we have got a helpful tool for designing the technology and device structure of the Insulated Gate Bipolar Transistor. The calculated characteristics of the lateral double diffused MOS-transistor were in acceptable agreement with the measurements.",
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Combined SUPREM and MINIMOS Simulations of LDMOS Structure in IGBT. / Drozdy, Gyözö; Eränen, Simo; Ronkainen, Hannu.

In: Physica Scripta, Vol. 1990, No. T33, 1990, p. 131-132.

Research output: Contribution to journalArticleScientificpeer-review

TY - JOUR

T1 - Combined SUPREM and MINIMOS Simulations of LDMOS Structure in IGBT

AU - Drozdy, Gyözö

AU - Eränen, Simo

AU - Ronkainen, Hannu

PY - 1990

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AB - The MINIMOS modeling capability was extended to lateral double diffused MOS-transistors. With combined use of MINIMOS, SUPREM and a newly developed interface program we have got a helpful tool for designing the technology and device structure of the Insulated Gate Bipolar Transistor. The calculated characteristics of the lateral double diffused MOS-transistor were in acceptable agreement with the measurements.

U2 - 10.1088/0031-8949/1990/T33/023

DO - 10.1088/0031-8949/1990/T33/023

M3 - Article

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SP - 131

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JO - Physica Scripta

JF - Physica Scripta

SN - 0031-8949

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