Abstract
| Original language | English |
|---|---|
| Pages (from-to) | 131-132 |
| Journal | Physica Scripta |
| Volume | 1990 |
| Issue number | T33 |
| DOIs | |
| Publication status | Published - 1990 |
| MoE publication type | A1 Journal article-refereed |
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Combined SUPREM and MINIMOS Simulations of LDMOS Structure in IGBT. / Drozdy, Gyözö; Eränen, Simo; Ronkainen, Hannu.
In: Physica Scripta, Vol. 1990, No. T33, 1990, p. 131-132.Research output: Contribution to journal › Article › Scientific › peer-review
TY - JOUR
T1 - Combined SUPREM and MINIMOS Simulations of LDMOS Structure in IGBT
AU - Drozdy, Gyözö
AU - Eränen, Simo
AU - Ronkainen, Hannu
PY - 1990
Y1 - 1990
N2 - The MINIMOS modeling capability was extended to lateral double diffused MOS-transistors. With combined use of MINIMOS, SUPREM and a newly developed interface program we have got a helpful tool for designing the technology and device structure of the Insulated Gate Bipolar Transistor. The calculated characteristics of the lateral double diffused MOS-transistor were in acceptable agreement with the measurements.
AB - The MINIMOS modeling capability was extended to lateral double diffused MOS-transistors. With combined use of MINIMOS, SUPREM and a newly developed interface program we have got a helpful tool for designing the technology and device structure of the Insulated Gate Bipolar Transistor. The calculated characteristics of the lateral double diffused MOS-transistor were in acceptable agreement with the measurements.
U2 - 10.1088/0031-8949/1990/T33/023
DO - 10.1088/0031-8949/1990/T33/023
M3 - Article
VL - 1990
SP - 131
EP - 132
JO - Physica Scripta
JF - Physica Scripta
SN - 0031-8949
IS - T33
ER -