Combined SUPREM and MINIMOS Simulations of LDMOS Structure in IGBT

Gyözö Drozdy; Simo Eränen; Hannu Ronkainen

doi:10.1088/0031-8949/1990/T33/023

Combined SUPREM and MINIMOS Simulations of LDMOS Structure in IGBT

Gyözö Drozdy, Simo Eränen, Hannu Ronkainen

Research output: Contribution to journal › Article › Scientific › peer-review

Abstract

The MINIMOS modeling capability was extended to lateral double diffused MOS-transistors. With combined use of MINIMOS, SUPREM and a newly developed interface program we have got a helpful tool for designing the technology and device structure of the Insulated Gate Bipolar Transistor. The calculated characteristics of the lateral double diffused MOS-transistor were in acceptable agreement with the measurements.

Original language	English
Pages (from-to)	131-132
Journal	Physica Scripta
Volume	1990
Issue number	T33
DOIs	https://doi.org/10.1088/0031-8949/1990/T33/023
Publication status	Published - 1990
MoE publication type	A1 Journal article-refereed

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10.1088/0031-8949/1990/T33/023

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Drozdy, G., Eränen, S., & Ronkainen, H. (1990). Combined SUPREM and MINIMOS Simulations of LDMOS Structure in IGBT. Physica Scripta, 1990(T33), 131-132. https://doi.org/10.1088/0031-8949/1990/T33/023

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abstract = "The MINIMOS modeling capability was extended to lateral double diffused MOS-transistors. With combined use of MINIMOS, SUPREM and a newly developed interface program we have got a helpful tool for designing the technology and device structure of the Insulated Gate Bipolar Transistor. The calculated characteristics of the lateral double diffused MOS-transistor were in acceptable agreement with the measurements.",

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doi = "10.1088/0031-8949/1990/T33/023",

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AU - Drozdy, Gyözö

AU - Eränen, Simo

AU - Ronkainen, Hannu

PY - 1990

Y1 - 1990

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AB - The MINIMOS modeling capability was extended to lateral double diffused MOS-transistors. With combined use of MINIMOS, SUPREM and a newly developed interface program we have got a helpful tool for designing the technology and device structure of the Insulated Gate Bipolar Transistor. The calculated characteristics of the lateral double diffused MOS-transistor were in acceptable agreement with the measurements.

U2 - 10.1088/0031-8949/1990/T33/023

DO - 10.1088/0031-8949/1990/T33/023

M3 - Article

VL - 1990

SP - 131

EP - 132

JO - Physica Scripta

JF - Physica Scripta

SN - 0031-8949

IS - T33

ER -