Combined SUPREM and MINIMOS Simulations of LDMOS Structure in IGBT

Gyözö Drozdy, Simo Eränen, Hannu Ronkainen

    Research output: Contribution to journal › Article › Scientific › peer-review

    Abstract

    The MINIMOS modeling capability was extended to lateral double diffused MOS-transistors. With combined use of MINIMOS, SUPREM and a newly developed interface program we have got a helpful tool for designing the technology and device structure of the Insulated Gate Bipolar Transistor. The calculated characteristics of the lateral double diffused MOS-transistor were in acceptable agreement with the measurements.
    Original languageEnglish
    Pages (from-to)131-132
    JournalPhysica Scripta
    Volume1990
    Issue numberT33
    DOIs
    Publication statusPublished - 1990
    MoE publication typeA1 Journal article-refereed

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    Lateral
    transistors
    bipolar transistors
    Simulation
    simulation
    Modeling

    Cite this

    Drozdy, Gyözö ; Eränen, Simo ; Ronkainen, Hannu. / Combined SUPREM and MINIMOS Simulations of LDMOS Structure in IGBT. In: Physica Scripta. 1990 ; Vol. 1990, No. T33. pp. 131-132.
    @article{11da11c8a78b457a89659fefac602dab,
    title = "Combined SUPREM and MINIMOS Simulations of LDMOS Structure in IGBT",
    abstract = "The MINIMOS modeling capability was extended to lateral double diffused MOS-transistors. With combined use of MINIMOS, SUPREM and a newly developed interface program we have got a helpful tool for designing the technology and device structure of the Insulated Gate Bipolar Transistor. The calculated characteristics of the lateral double diffused MOS-transistor were in acceptable agreement with the measurements.",
    author = "Gy{\"o}z{\"o} Drozdy and Simo Er{\"a}nen and Hannu Ronkainen",
    year = "1990",
    doi = "10.1088/0031-8949/1990/T33/023",
    language = "English",
    volume = "1990",
    pages = "131--132",
    journal = "Physica Scripta",
    issn = "0031-8949",
    publisher = "Institute of Physics IOP",
    number = "T33",

    }

    Drozdy, G, Eränen, S & Ronkainen, H 1990, 'Combined SUPREM and MINIMOS Simulations of LDMOS Structure in IGBT', Physica Scripta, vol. 1990, no. T33, pp. 131-132. https://doi.org/10.1088/0031-8949/1990/T33/023

    Combined SUPREM and MINIMOS Simulations of LDMOS Structure in IGBT. / Drozdy, Gyözö; Eränen, Simo; Ronkainen, Hannu.

    In: Physica Scripta, Vol. 1990, No. T33, 1990, p. 131-132.

    Research output: Contribution to journal › Article › Scientific › peer-review

    TY - JOUR

    T1 - Combined SUPREM and MINIMOS Simulations of LDMOS Structure in IGBT

    AU - Drozdy, Gyözö

    AU - Eränen, Simo

    AU - Ronkainen, Hannu

    PY - 1990

    Y1 - 1990

    N2 - The MINIMOS modeling capability was extended to lateral double diffused MOS-transistors. With combined use of MINIMOS, SUPREM and a newly developed interface program we have got a helpful tool for designing the technology and device structure of the Insulated Gate Bipolar Transistor. The calculated characteristics of the lateral double diffused MOS-transistor were in acceptable agreement with the measurements.

    AB - The MINIMOS modeling capability was extended to lateral double diffused MOS-transistors. With combined use of MINIMOS, SUPREM and a newly developed interface program we have got a helpful tool for designing the technology and device structure of the Insulated Gate Bipolar Transistor. The calculated characteristics of the lateral double diffused MOS-transistor were in acceptable agreement with the measurements.

    U2 - 10.1088/0031-8949/1990/T33/023

    DO - 10.1088/0031-8949/1990/T33/023

    M3 - Article

    VL - 1990

    SP - 131

    EP - 132

    JO - Physica Scripta

    JF - Physica Scripta

    SN - 0031-8949

    IS - T33

    ER -

    Drozdy G, Eränen S, Ronkainen H. Combined SUPREM and MINIMOS Simulations of LDMOS Structure in IGBT. Physica Scripta. 1990;1990(T33):131-132. https://doi.org/10.1088/0031-8949/1990/T33/023

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