Combined SUPREM and MINIMOS Simulations of LDMOS Structure in IGBT

Gyözö Drozdy, Simo Eränen, Hannu Ronkainen

    Research output: Contribution to journalArticleScientificpeer-review

    Abstract

    The MINIMOS modeling capability was extended to lateral double diffused MOS-transistors. With combined use of MINIMOS, SUPREM and a newly developed interface program we have got a helpful tool for designing the technology and device structure of the Insulated Gate Bipolar Transistor. The calculated characteristics of the lateral double diffused MOS-transistor were in acceptable agreement with the measurements.
    Original languageEnglish
    Pages (from-to)131-132
    JournalPhysica Scripta
    Volume1990
    Issue numberT33
    DOIs
    Publication statusPublished - 1990
    MoE publication typeA1 Journal article-refereed

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