Combined SUPREM and MINIMOS Simulations of LDMOS Structure in IGBT

Gyözö Drozdy; Simo Eränen; Hannu Ronkainen

doi:10.1088/0031-8949/1990/T33/023

Combined SUPREM and MINIMOS Simulations of LDMOS Structure in IGBT

Gyözö Drozdy
, Simo Eränen
, Hannu Ronkainen

Research output: Contribution to journal › Article › Scientific › peer-review

Abstract

The MINIMOS modeling capability was extended to lateral double diffused MOS-transistors. With combined use of MINIMOS, SUPREM and a newly developed interface program we have got a helpful tool for designing the technology and device structure of the Insulated Gate Bipolar Transistor. The calculated characteristics of the lateral double diffused MOS-transistor were in acceptable agreement with the measurements.

Original language	English
Pages (from-to)	131-132
Journal	Physica Scripta
Volume	1990
Issue number	T33
DOIs	https://doi.org/10.1088/0031-8949/1990/T33/023
Publication status	Published - 1990
MoE publication type	A1 Journal article-refereed

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@article{11da11c8a78b457a89659fefac602dab,

title = "Combined SUPREM and MINIMOS Simulations of LDMOS Structure in IGBT",

abstract = "The MINIMOS modeling capability was extended to lateral double diffused MOS-transistors. With combined use of MINIMOS, SUPREM and a newly developed interface program we have got a helpful tool for designing the technology and device structure of the Insulated Gate Bipolar Transistor. The calculated characteristics of the lateral double diffused MOS-transistor were in acceptable agreement with the measurements.",

author = "Gy{\"o}z{\"o} Drozdy and Simo Er{\"a}nen and Hannu Ronkainen",

year = "1990",

doi = "10.1088/0031-8949/1990/T33/023",

language = "English",

volume = "1990",

pages = "131--132",

journal = "Physica Scripta",

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publisher = "Addison-Wesley",

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TY - JOUR

T1 - Combined SUPREM and MINIMOS Simulations of LDMOS Structure in IGBT

AU - Drozdy, Gyözö

AU - Eränen, Simo

AU - Ronkainen, Hannu

PY - 1990

Y1 - 1990

N2 - The MINIMOS modeling capability was extended to lateral double diffused MOS-transistors. With combined use of MINIMOS, SUPREM and a newly developed interface program we have got a helpful tool for designing the technology and device structure of the Insulated Gate Bipolar Transistor. The calculated characteristics of the lateral double diffused MOS-transistor were in acceptable agreement with the measurements.

AB - The MINIMOS modeling capability was extended to lateral double diffused MOS-transistors. With combined use of MINIMOS, SUPREM and a newly developed interface program we have got a helpful tool for designing the technology and device structure of the Insulated Gate Bipolar Transistor. The calculated characteristics of the lateral double diffused MOS-transistor were in acceptable agreement with the measurements.

U2 - 10.1088/0031-8949/1990/T33/023

DO - 10.1088/0031-8949/1990/T33/023

M3 - Article

SN - 0031-8949

VL - 1990

SP - 131

EP - 132

JO - Physica Scripta

JF - Physica Scripta

IS - T33

ER -

Combined SUPREM and MINIMOS Simulations of LDMOS Structure in IGBT

Abstract

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