Comparative study of ALD SiO2 thin films for optical applications

Kristin Pfeiffer, Svetlana Shestaeva, Astrid Bingel, Peter Munzert, Lilit Ghazaryan, Cristian van Helvoirt, Wilhelmus M.M. Kessels, Umut T. Sanli, Corinne Grévent, Gisela Schütz, Matti Putkonen, Iain Buchanan, Lars Jensen, Detlev Ristau, Andreas Tünnermann, Adriana Szeghalmi (Corresponding Author)

    Research output: Contribution to journalArticleScientificpeer-review

    19 Citations (Scopus)

    Abstract

    We have investigated the suitability of atomic layer deposition (ALD) for SiO2 optical coatings and applied it to broadband antireflective multilayers in combination with HfO2 as the high refractive index material. SiO2 thin films were successfully grown using tris[dimethylamino]silane (3DMAS), bis[diethylamino]silane (BDEAS) with plasma activated oxygen as precursors, and the AP-LTO 330 precursor with ozone, respectively. The amorphous SiO2 films show very low optical losses within a spectral range of 200 nm to 1100 nm. Laser calorimetric measurements show absorption losses of 300 nm thick SiO2 films of about 1.5 parts per million at a wavelength of 1064 nm. The films are optically homogeneous and possess a good scalability of film thickness. The film surface porosity - which correlates to a shift in the transmittance spectra under vacuum and air conditions - has been suppressed by optimized plasma parameters or Al2O3 sealing layers.
    Original languageEnglish
    Pages (from-to)660-670
    JournalOptical Materials Express
    Volume6
    Issue number2
    DOIs
    Publication statusPublished - 2016
    MoE publication typeA1 Journal article-refereed

    Fingerprint

    Atomic layer deposition
    Silanes
    Optical coatings
    Plasmas
    Thin films
    Optical losses
    Ozone
    Amorphous films
    Thick films
    Film thickness
    Scalability
    Refractive index
    Multilayers
    Porosity
    Vacuum
    Oxygen
    Wavelength
    Lasers
    Air
    tris(dimethylamino)silane

    Cite this

    Pfeiffer, K., Shestaeva, S., Bingel, A., Munzert, P., Ghazaryan, L., van Helvoirt, C., ... Szeghalmi, A. (2016). Comparative study of ALD SiO2 thin films for optical applications. Optical Materials Express, 6(2), 660-670. https://doi.org/10.1364/OME.6.000660
    Pfeiffer, Kristin ; Shestaeva, Svetlana ; Bingel, Astrid ; Munzert, Peter ; Ghazaryan, Lilit ; van Helvoirt, Cristian ; Kessels, Wilhelmus M.M. ; Sanli, Umut T. ; Grévent, Corinne ; Schütz, Gisela ; Putkonen, Matti ; Buchanan, Iain ; Jensen, Lars ; Ristau, Detlev ; Tünnermann, Andreas ; Szeghalmi, Adriana. / Comparative study of ALD SiO2 thin films for optical applications. In: Optical Materials Express. 2016 ; Vol. 6, No. 2. pp. 660-670.
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    title = "Comparative study of ALD SiO2 thin films for optical applications",
    abstract = "We have investigated the suitability of atomic layer deposition (ALD) for SiO2 optical coatings and applied it to broadband antireflective multilayers in combination with HfO2 as the high refractive index material. SiO2 thin films were successfully grown using tris[dimethylamino]silane (3DMAS), bis[diethylamino]silane (BDEAS) with plasma activated oxygen as precursors, and the AP-LTO 330 precursor with ozone, respectively. The amorphous SiO2 films show very low optical losses within a spectral range of 200 nm to 1100 nm. Laser calorimetric measurements show absorption losses of 300 nm thick SiO2 films of about 1.5 parts per million at a wavelength of 1064 nm. The films are optically homogeneous and possess a good scalability of film thickness. The film surface porosity - which correlates to a shift in the transmittance spectra under vacuum and air conditions - has been suppressed by optimized plasma parameters or Al2O3 sealing layers.",
    author = "Kristin Pfeiffer and Svetlana Shestaeva and Astrid Bingel and Peter Munzert and Lilit Ghazaryan and {van Helvoirt}, Cristian and Kessels, {Wilhelmus M.M.} and Sanli, {Umut T.} and Corinne Gr{\'e}vent and Gisela Sch{\"u}tz and Matti Putkonen and Iain Buchanan and Lars Jensen and Detlev Ristau and Andreas T{\"u}nnermann and Adriana Szeghalmi",
    year = "2016",
    doi = "10.1364/OME.6.000660",
    language = "English",
    volume = "6",
    pages = "660--670",
    journal = "Optical Materials Express",
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    Pfeiffer, K, Shestaeva, S, Bingel, A, Munzert, P, Ghazaryan, L, van Helvoirt, C, Kessels, WMM, Sanli, UT, Grévent, C, Schütz, G, Putkonen, M, Buchanan, I, Jensen, L, Ristau, D, Tünnermann, A & Szeghalmi, A 2016, 'Comparative study of ALD SiO2 thin films for optical applications', Optical Materials Express, vol. 6, no. 2, pp. 660-670. https://doi.org/10.1364/OME.6.000660

    Comparative study of ALD SiO2 thin films for optical applications. / Pfeiffer, Kristin; Shestaeva, Svetlana; Bingel, Astrid; Munzert, Peter; Ghazaryan, Lilit; van Helvoirt, Cristian; Kessels, Wilhelmus M.M.; Sanli, Umut T.; Grévent, Corinne; Schütz, Gisela; Putkonen, Matti; Buchanan, Iain; Jensen, Lars; Ristau, Detlev; Tünnermann, Andreas; Szeghalmi, Adriana (Corresponding Author).

    In: Optical Materials Express, Vol. 6, No. 2, 2016, p. 660-670.

    Research output: Contribution to journalArticleScientificpeer-review

    TY - JOUR

    T1 - Comparative study of ALD SiO2 thin films for optical applications

    AU - Pfeiffer, Kristin

    AU - Shestaeva, Svetlana

    AU - Bingel, Astrid

    AU - Munzert, Peter

    AU - Ghazaryan, Lilit

    AU - van Helvoirt, Cristian

    AU - Kessels, Wilhelmus M.M.

    AU - Sanli, Umut T.

    AU - Grévent, Corinne

    AU - Schütz, Gisela

    AU - Putkonen, Matti

    AU - Buchanan, Iain

    AU - Jensen, Lars

    AU - Ristau, Detlev

    AU - Tünnermann, Andreas

    AU - Szeghalmi, Adriana

    PY - 2016

    Y1 - 2016

    N2 - We have investigated the suitability of atomic layer deposition (ALD) for SiO2 optical coatings and applied it to broadband antireflective multilayers in combination with HfO2 as the high refractive index material. SiO2 thin films were successfully grown using tris[dimethylamino]silane (3DMAS), bis[diethylamino]silane (BDEAS) with plasma activated oxygen as precursors, and the AP-LTO 330 precursor with ozone, respectively. The amorphous SiO2 films show very low optical losses within a spectral range of 200 nm to 1100 nm. Laser calorimetric measurements show absorption losses of 300 nm thick SiO2 films of about 1.5 parts per million at a wavelength of 1064 nm. The films are optically homogeneous and possess a good scalability of film thickness. The film surface porosity - which correlates to a shift in the transmittance spectra under vacuum and air conditions - has been suppressed by optimized plasma parameters or Al2O3 sealing layers.

    AB - We have investigated the suitability of atomic layer deposition (ALD) for SiO2 optical coatings and applied it to broadband antireflective multilayers in combination with HfO2 as the high refractive index material. SiO2 thin films were successfully grown using tris[dimethylamino]silane (3DMAS), bis[diethylamino]silane (BDEAS) with plasma activated oxygen as precursors, and the AP-LTO 330 precursor with ozone, respectively. The amorphous SiO2 films show very low optical losses within a spectral range of 200 nm to 1100 nm. Laser calorimetric measurements show absorption losses of 300 nm thick SiO2 films of about 1.5 parts per million at a wavelength of 1064 nm. The films are optically homogeneous and possess a good scalability of film thickness. The film surface porosity - which correlates to a shift in the transmittance spectra under vacuum and air conditions - has been suppressed by optimized plasma parameters or Al2O3 sealing layers.

    U2 - 10.1364/OME.6.000660

    DO - 10.1364/OME.6.000660

    M3 - Article

    VL - 6

    SP - 660

    EP - 670

    JO - Optical Materials Express

    JF - Optical Materials Express

    SN - 2159-3930

    IS - 2

    ER -

    Pfeiffer K, Shestaeva S, Bingel A, Munzert P, Ghazaryan L, van Helvoirt C et al. Comparative study of ALD SiO2 thin films for optical applications. Optical Materials Express. 2016;6(2):660-670. https://doi.org/10.1364/OME.6.000660