Abstract
We have investigated the suitability of atomic layer
deposition (ALD) for SiO2 optical coatings and applied it
to broadband antireflective multilayers in combination
with HfO2 as the high refractive index material. SiO2
thin films were successfully grown using
tris[dimethylamino]silane (3DMAS),
bis[diethylamino]silane (BDEAS) with plasma activated
oxygen as precursors, and the AP-LTO 330 precursor with
ozone, respectively. The amorphous SiO2 films show very
low optical losses within a spectral range of 200 nm to
1100 nm. Laser calorimetric measurements show absorption
losses of 300 nm thick SiO2 films of about 1.5 parts per
million at a wavelength of 1064 nm. The films are
optically homogeneous and possess a good scalability of
film thickness. The film surface porosity - which
correlates to a shift in the transmittance spectra under
vacuum and air conditions - has been suppressed by
optimized plasma parameters or Al2O3 sealing layers.
Original language | English |
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Pages (from-to) | 660-670 |
Journal | Optical Materials Express |
Volume | 6 |
Issue number | 2 |
DOIs | |
Publication status | Published - 2016 |
MoE publication type | A1 Journal article-refereed |