Comparative study of the substrate-film interfaces of GaAs grown by two molecular beam epitaxial methods

K. Tappura; A. Salokatve; K. Rakennus; H. Asonen; M. Pessa

doi:10.1063/1.103880

Comparative study of the substrate-film interfaces of GaAs grown by two molecular beam epitaxial methods

K. Tappura, A. Salokatve, K. Rakennus, H. Asonen, M. Pessa

Not published at VTT

Tampere University of Technology (TUT)

Research output: Contribution to journal › Article › Scientific › peer-review

4 Citations (Scopus)

Abstract

Carrier concentration profiles in the region of a substrate‐film homojunction for n‐ and p‐type GaAs were studied using a capacitance‐voltage carrier profiling technique. The GaAs films were grown on GaAs substrates by molecular beam epitaxy (MBE) and by gas‐source molecular beam epitaxy (GSMBE). The GaAs homojunctions grown by MBE exhibited a much larger reduction in carrier concentration than those prepared by GSMBE. The highest quality interface, without an observable depletion region, was obtained when an additional hydrogen plasma was used during heat treatment prior to GSMBE growth.

Original language	English
Pages (from-to)	2313-2314
Journal	Applied Physics Letters
Volume	57
Issue number	22
DOIs	https://doi.org/10.1063/1.103880
Publication status	Published - 1990
MoE publication type	A1 Journal article-refereed

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10.1063/1.103880

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abstract = "Carrier concentration profiles in the region of a substrate‐film homojunction for n‐ and p‐type GaAs were studied using a capacitance‐voltage carrier profiling technique. The GaAs films were grown on GaAs substrates by molecular beam epitaxy (MBE) and by gas‐source molecular beam epitaxy (GSMBE). The GaAs homojunctions grown by MBE exhibited a much larger reduction in carrier concentration than those prepared by GSMBE. The highest quality interface, without an observable depletion region, was obtained when an additional hydrogen plasma was used during heat treatment prior to GSMBE growth.",

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AU - Tappura, K.

AU - Salokatve, A.

AU - Rakennus, K.

AU - Asonen, H.

AU - Pessa, M.

PY - 1990

Y1 - 1990

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AB - Carrier concentration profiles in the region of a substrate‐film homojunction for n‐ and p‐type GaAs were studied using a capacitance‐voltage carrier profiling technique. The GaAs films were grown on GaAs substrates by molecular beam epitaxy (MBE) and by gas‐source molecular beam epitaxy (GSMBE). The GaAs homojunctions grown by MBE exhibited a much larger reduction in carrier concentration than those prepared by GSMBE. The highest quality interface, without an observable depletion region, was obtained when an additional hydrogen plasma was used during heat treatment prior to GSMBE growth.

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JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 22

ER -

Comparative study of the substrate-film interfaces of GaAs grown by two molecular beam epitaxial methods

Abstract

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