Two window layer materials, Al0.51In0.49P (Eg = 2.3 eV) and Ga0.51In0.49P (Eg = 1.88 eV) were compared for gas-source and solid-source MBE grown GaAs and Ga0.84In0.16As0.68P0.32 (Eg = 1.55 eV) solar cells. Due to the wider band-gap of Al0.51In0.49P, the increased spectral response was observed for both GaAs and Ga0.84In0.16As0.68P0.32 material based solar cells. In the case of the GaAs cells, the short-circuit current density was observed to Increase from 32.5 mA/cm2 to 34.4 mA/cm2 with the Al0.51In0.49P window layer at AM0. Similar improvement was observed for the Ga0.84In0.16As0.68P0.32 solar cells.
|Title of host publication||Proceedings of the 1997 IEEE 26th Photovoltaic Specialists Conference|
|Publisher||IEEE Institute of Electrical and Electronic Engineers|
|Publication status||Published - 1997|
|MoE publication type||A4 Article in a conference publication|
|Event||26th Photovoltaic Specialists Conference - Anaheim, United States|
Duration: 29 Sep 1997 → 3 Oct 1997
|Conference||26th Photovoltaic Specialists Conference|
|Period||29/09/97 → 3/10/97|
Jaakkola, R., Lammasniemi, J., Kazantsev, A. B., & Tappura, K. (1997). Comparison of Al0.51In0.49P and Ga0.51In0.49P window layers for GaAs and GaInAsP solar cells. In Proceedings of the 1997 IEEE 26th Photovoltaic Specialists Conference (pp. 891-894). IEEE Institute of Electrical and Electronic Engineers.