Abstract
Two window layer materials, Al0.51In0.49P (Eg = 2.3 eV) and Ga0.51In0.49P (Eg = 1.88 eV) were compared for gas-source and solid-source MBE grown GaAs and Ga0.84In0.16As0.68P0.32 (Eg = 1.55 eV) solar cells. Due to the wider band-gap of Al0.51In0.49P, the increased spectral response was observed for both GaAs and Ga0.84In0.16As0.68P0.32 material based solar cells. In the case of the GaAs cells, the short-circuit current density was observed to Increase from 32.5 mA/cm2 to 34.4 mA/cm2 with the Al0.51In0.49P window layer at AM0. Similar improvement was observed for the Ga0.84In0.16As0.68P0.32 solar cells.
Original language | English |
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Title of host publication | Proceedings of the 1997 IEEE 26th Photovoltaic Specialists Conference |
Publisher | IEEE Institute of Electrical and Electronic Engineers |
Pages | 891-894 |
Publication status | Published - 1997 |
MoE publication type | A4 Article in a conference publication |
Event | 26th Photovoltaic Specialists Conference - Anaheim, United States Duration: 29 Sept 1997 → 3 Oct 1997 |
Conference
Conference | 26th Photovoltaic Specialists Conference |
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Country/Territory | United States |
City | Anaheim |
Period | 29/09/97 → 3/10/97 |