Comparison of Al0.51In0.49P and Ga0.51In0.49P window layers for GaAs and GaInAsP solar cells

R. Jaakkola, J. Lammasniemi, A.B. Kazantsev, K. Tappura

Research output: Chapter in Book/Report/Conference proceedingConference article in proceedingsScientificpeer-review

6 Citations (Scopus)

Abstract

Two window layer materials, Al0.51In0.49P (Eg = 2.3 eV) and Ga0.51In0.49P (Eg = 1.88 eV) were compared for gas-source and solid-source MBE grown GaAs and Ga0.84In0.16As0.68P0.32 (Eg = 1.55 eV) solar cells. Due to the wider band-gap of Al0.51In0.49P, the increased spectral response was observed for both GaAs and Ga0.84In0.16As0.68P0.32 material based solar cells. In the case of the GaAs cells, the short-circuit current density was observed to Increase from 32.5 mA/cm2 to 34.4 mA/cm2 with the Al0.51In0.49P window layer at AM0. Similar improvement was observed for the Ga0.84In0.16As0.68P0.32 solar cells.
Original languageUndefined
Title of host publicationProceedings of the 1997 IEEE 26th Photovoltaic Specialists Conference
PublisherIEEE Institute of Electrical and Electronic Engineers
Pages891-894
Publication statusPublished - 1997
MoE publication typeA4 Article in a conference publication
Event26th Photovoltaic Specialists Conference - Anaheim, United States
Duration: 29 Sep 19973 Oct 1997

Conference

Conference26th Photovoltaic Specialists Conference
CountryUnited States
CityAnaheim
Period29/09/973/10/97

Cite this

Jaakkola, R., Lammasniemi, J., Kazantsev, A. B., & Tappura, K. (1997). Comparison of Al0.51In0.49P and Ga0.51In0.49P window layers for GaAs and GaInAsP solar cells. In Proceedings of the 1997 IEEE 26th Photovoltaic Specialists Conference (pp. 891-894). IEEE Institute of Electrical and Electronic Engineers.