Comparison of Al0.51In0.49P and Ga0.51In0.49P window layers for GaAs and GaInAsP solar cells

R. Jaakkola; J. Lammasniemi; A.B. Kazantsev; K. Tappura

Comparison of Al0.51In0.49P and Ga0.51In0.49P window layers for GaAs and GaInAsP solar cells

R. Jaakkola
, J. Lammasniemi
, A.B. Kazantsev
, K. Tappura

Not published at VTT

Tampere University of Technology (TUT)

Research output: Chapter in Book/Report/Conference proceeding › Conference article in proceedings › Scientific › peer-review

7 Citations (Scopus)

Abstract

Two window layer materials, Al0.51In0.49P (Eg = 2.3 eV) and Ga0.51In0.49P (Eg = 1.88 eV) were compared for gas-source and solid-source MBE grown GaAs and Ga0.84In0.16As0.68P0.32 (Eg = 1.55 eV) solar cells. Due to the wider band-gap of Al0.51In0.49P, the increased spectral response was observed for both GaAs and Ga0.84In0.16As0.68P0.32 material based solar cells. In the case of the GaAs cells, the short-circuit current density was observed to Increase from 32.5 mA/cm2 to 34.4 mA/cm2 with the Al0.51In0.49P window layer at AM0. Similar improvement was observed for the Ga0.84In0.16As0.68P0.32 solar cells.

Original language	English
Title of host publication	Proceedings of the 1997 IEEE 26th Photovoltaic Specialists Conference
Publisher	IEEE Institute of Electrical and Electronic Engineers
Pages	891-894
Publication status	Published - 1997
MoE publication type	A4 Article in a conference publication
Event	26th Photovoltaic Specialists Conference - Anaheim, United States Duration: 29 Sept 1997 → 3 Oct 1997

Conference

Conference	26th Photovoltaic Specialists Conference
Country/Territory	United States
City	Anaheim
Period	29/09/97 → 3/10/97

Cite this

@inproceedings{3f4d3754a5b04d21a5176d52369ef851,

title = "Comparison of Al0.51In0.49P and Ga0.51In0.49P window layers for GaAs and GaInAsP solar cells",

abstract = "Two window layer materials, Al0.51In0.49P (Eg = 2.3 eV) and Ga0.51In0.49P (Eg = 1.88 eV) were compared for gas-source and solid-source MBE grown GaAs and Ga0.84In0.16As0.68P0.32 (Eg = 1.55 eV) solar cells. Due to the wider band-gap of Al0.51In0.49P, the increased spectral response was observed for both GaAs and Ga0.84In0.16As0.68P0.32 material based solar cells. In the case of the GaAs cells, the short-circuit current density was observed to Increase from 32.5 mA/cm2 to 34.4 mA/cm2 with the Al0.51In0.49P window layer at AM0. Similar improvement was observed for the Ga0.84In0.16As0.68P0.32 solar cells.",

author = "R. Jaakkola and J. Lammasniemi and A.B. Kazantsev and K. Tappura",

year = "1997",

language = "English",

pages = "891--894",

booktitle = "Proceedings of the 1997 IEEE 26th Photovoltaic Specialists Conference",

publisher = "IEEE Institute of Electrical and Electronic Engineers",

address = "United States",

note = "26th Photovoltaic Specialists Conference ; Conference date: 29-09-1997 Through 03-10-1997",

}

Jaakkola, R, Lammasniemi, J, Kazantsev, AB & Tappura, K 1997, Comparison of Al0.51In0.49P and Ga0.51In0.49P window layers for GaAs and GaInAsP solar cells. in Proceedings of the 1997 IEEE 26th Photovoltaic Specialists Conference. IEEE Institute of Electrical and Electronic Engineers, pp. 891-894, 26th Photovoltaic Specialists Conference, Anaheim, United States, 29/09/97.

Comparison of Al0.51In0.49P and Ga0.51In0.49P window layers for GaAs and GaInAsP solar cells. / Jaakkola, R.; Lammasniemi, J.; Kazantsev, A.B. et al.
Proceedings of the 1997 IEEE 26th Photovoltaic Specialists Conference. IEEE Institute of Electrical and Electronic Engineers, 1997. p. 891-894.

Research output: Chapter in Book/Report/Conference proceeding › Conference article in proceedings › Scientific › peer-review

TY - GEN

T1 - Comparison of Al0.51In0.49P and Ga0.51In0.49P window layers for GaAs and GaInAsP solar cells

AU - Jaakkola, R.

AU - Lammasniemi, J.

AU - Kazantsev, A.B.

AU - Tappura, K.

PY - 1997

Y1 - 1997

N2 - Two window layer materials, Al0.51In0.49P (Eg = 2.3 eV) and Ga0.51In0.49P (Eg = 1.88 eV) were compared for gas-source and solid-source MBE grown GaAs and Ga0.84In0.16As0.68P0.32 (Eg = 1.55 eV) solar cells. Due to the wider band-gap of Al0.51In0.49P, the increased spectral response was observed for both GaAs and Ga0.84In0.16As0.68P0.32 material based solar cells. In the case of the GaAs cells, the short-circuit current density was observed to Increase from 32.5 mA/cm2 to 34.4 mA/cm2 with the Al0.51In0.49P window layer at AM0. Similar improvement was observed for the Ga0.84In0.16As0.68P0.32 solar cells.

AB - Two window layer materials, Al0.51In0.49P (Eg = 2.3 eV) and Ga0.51In0.49P (Eg = 1.88 eV) were compared for gas-source and solid-source MBE grown GaAs and Ga0.84In0.16As0.68P0.32 (Eg = 1.55 eV) solar cells. Due to the wider band-gap of Al0.51In0.49P, the increased spectral response was observed for both GaAs and Ga0.84In0.16As0.68P0.32 material based solar cells. In the case of the GaAs cells, the short-circuit current density was observed to Increase from 32.5 mA/cm2 to 34.4 mA/cm2 with the Al0.51In0.49P window layer at AM0. Similar improvement was observed for the Ga0.84In0.16As0.68P0.32 solar cells.

UR - https://www.scopus.com/pages/publications/0031385608

M3 - Conference article in proceedings

SP - 891

EP - 894

BT - Proceedings of the 1997 IEEE 26th Photovoltaic Specialists Conference

PB - IEEE Institute of Electrical and Electronic Engineers

T2 - 26th Photovoltaic Specialists Conference

Y2 - 29 September 1997 through 3 October 1997

ER -

Comparison of Al0.51In0.49P and Ga0.51In0.49P window layers for GaAs and GaInAsP solar cells

Abstract

Conference

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