Comparison of analytical methods for residue detection of resist removal processes

Tarja Riihisaari, Jari Likonen, Ari Kiviranta, S. Eränen, S. Lehto, Jarkko Tuominen, Timo Lindblom, Esa Muukkonen

Research output: Chapter in Book/Report/Conference proceedingConference article in proceedingsScientificpeer-review

2 Citations (Scopus)

Abstract

In integrated circuits fabrication photoresist layers are used as a pattern definition in etching and as a mask in ion implantation. Since photoresist layers are only used as an intermediate step and are not incorporated in the final structure, photoresist layers need to be thoroughly removed from the wafer surface. In this work we have evaluated the use of different on-line and off-line analytical methods for the detection of process residues of photoresist removal.

Original languageEnglish
Title of host publicationUltra Clean Processing of Silicon Surfaces IV
EditorsMarc Heyns, Marc Meuris, Paul Mertens
Pages215-218
ISBN (Electronic)978-3-0357-0683-3, 978-3-03859-999-9
DOIs
Publication statusPublished - 1998
MoE publication typeA4 Article in a conference publication
Event4th International Symposium on Ultra Clean Processing of Silicon Surfaces, UCPSS 1998 - Ostend, Belgium
Duration: 21 Sep 199823 Sep 1998

Publication series

SeriesSolid State Phenomena
Volume65-66
ISSN1012-0394

Conference

Conference4th International Symposium on Ultra Clean Processing of Silicon Surfaces, UCPSS 1998
CountryBelgium
CityOstend
Period21/09/9823/09/98

Keywords

  • AFM
  • P and T-GC/MS
  • SIMS

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    Riihisaari, T., Likonen, J., Kiviranta, A., Eränen, S., Lehto, S., Tuominen, J., Lindblom, T., & Muukkonen, E. (1998). Comparison of analytical methods for residue detection of resist removal processes. In M. Heyns, M. Meuris, & P. Mertens (Eds.), Ultra Clean Processing of Silicon Surfaces IV (pp. 215-218). Solid State Phenomena, Vol.. 65-66 https://doi.org/10.4028/www.scientific.net/SSP.65-66.215