@inproceedings{6cc5fc2712a243c19ca99690e165747d,
title = "Comparison of analytical methods for residue detection of resist removal processes",
abstract = "In integrated circuits fabrication photoresist layers are used as a pattern definition in etching and as a mask in ion implantation. Since photoresist layers are only used as an intermediate step and are not incorporated in the final structure, photoresist layers need to be thoroughly removed from the wafer surface. In this work we have evaluated the use of different on-line and off-line analytical methods for the detection of process residues of photoresist removal.",
keywords = "AFM, P and T-GC/MS, SIMS",
author = "Tarja Riihisaari and Jari Likonen and Ari Kiviranta and S. Er{\"a}nen and S. Lehto and Jarkko Tuominen and Timo Lindblom and Esa Muukkonen",
year = "1998",
doi = "10.4028/www.scientific.net/SSP.65-66.215",
language = "English",
isbn = "978-3-908450-40-5",
series = "Solid State Phenomena",
publisher = "Trans Tech Publications",
pages = "215--218",
editor = "Marc Heyns and Marc Meuris and Paul Mertens",
booktitle = "Ultra Clean Processing of Silicon Surfaces IV",
address = "Switzerland",
note = "4th International Symposium on Ultra Clean Processing of Silicon Surfaces, UCPSS 1998 ; Conference date: 21-09-1998 Through 23-09-1998",
}