Comparison of anodization spectroscopy with SIMS and RBS measurements for the characterization of Nb/AlAlOx/NB Josephson junction structures

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    1 Citation (Scopus)

    Abstract

    The thin tunneling barrier in a Nb/AlAlOx/Nb was characterized by anodization spectroscopy, SIMS and RBS. From the anodization spectroscopy we can get the film thickness from the voltage span and, most importantly, also the sharpness of the Nb/AlOx and Al/Nb interfaces around the tunneling barrier. Comparison of the anodization profiles with SIMS depth profiles and RBS spectra shows that the anodization spectroscopy can be used to characterize the junction quality.

    Original languageEnglish
    Pages (from-to)474-477
    Number of pages4
    JournalNuclear Instruments and Methods in Physics Research. Section B: Beam Interactions with Materials and Atoms
    Volume79
    Issue number1-4
    DOIs
    Publication statusPublished - 2 Jun 1993
    MoE publication typeA1 Journal article-refereed

    Fingerprint

    Secondary ion mass spectrometry
    Josephson junctions
    secondary ion mass spectrometry
    Spectroscopy
    spectroscopy
    sharpness
    profiles
    Film thickness
    film thickness
    Electric potential
    electric potential

    Keywords

    • Josephson junction

    Cite this

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    title = "Comparison of anodization spectroscopy with SIMS and RBS measurements for the characterization of Nb/AlAlOx/NB Josephson junction structures",
    abstract = "The thin tunneling barrier in a Nb/AlAlOx/Nb was characterized by anodization spectroscopy, SIMS and RBS. From the anodization spectroscopy we can get the film thickness from the voltage span and, most importantly, also the sharpness of the Nb/AlOx and Al/Nb interfaces around the tunneling barrier. Comparison of the anodization profiles with SIMS depth profiles and RBS spectra shows that the anodization spectroscopy can be used to characterize the junction quality.",
    keywords = "Josephson junction",
    author = "Jaakko Saarilahti and Jari Likonen and Leif Gr{\"o}nberg",
    note = "Project code: PUOT9124",
    year = "1993",
    month = "6",
    day = "2",
    doi = "10.1016/0168-583X(93)95392-I",
    language = "English",
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    pages = "474--477",
    journal = "Nuclear Instruments and Methods in Physics Research. Section B: Beam Interactions with Materials and Atoms",
    issn = "0168-583X",
    publisher = "Elsevier",
    number = "1-4",

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    TY - JOUR

    T1 - Comparison of anodization spectroscopy with SIMS and RBS measurements for the characterization of Nb/AlAlOx/NB Josephson junction structures

    AU - Saarilahti, Jaakko

    AU - Likonen, Jari

    AU - Grönberg, Leif

    N1 - Project code: PUOT9124

    PY - 1993/6/2

    Y1 - 1993/6/2

    N2 - The thin tunneling barrier in a Nb/AlAlOx/Nb was characterized by anodization spectroscopy, SIMS and RBS. From the anodization spectroscopy we can get the film thickness from the voltage span and, most importantly, also the sharpness of the Nb/AlOx and Al/Nb interfaces around the tunneling barrier. Comparison of the anodization profiles with SIMS depth profiles and RBS spectra shows that the anodization spectroscopy can be used to characterize the junction quality.

    AB - The thin tunneling barrier in a Nb/AlAlOx/Nb was characterized by anodization spectroscopy, SIMS and RBS. From the anodization spectroscopy we can get the film thickness from the voltage span and, most importantly, also the sharpness of the Nb/AlOx and Al/Nb interfaces around the tunneling barrier. Comparison of the anodization profiles with SIMS depth profiles and RBS spectra shows that the anodization spectroscopy can be used to characterize the junction quality.

    KW - Josephson junction

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    U2 - 10.1016/0168-583X(93)95392-I

    DO - 10.1016/0168-583X(93)95392-I

    M3 - Article

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    SP - 474

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    JO - Nuclear Instruments and Methods in Physics Research. Section B: Beam Interactions with Materials and Atoms

    JF - Nuclear Instruments and Methods in Physics Research. Section B: Beam Interactions with Materials and Atoms

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