The thin tunneling barrier in a Nb/AlAlOx/Nb was characterized by anodization spectroscopy, SIMS and RBS. From the anodization spectroscopy we can get the film thickness from the voltage span and, most importantly, also the sharpness of the Nb/AlOx and Al/Nb interfaces around the tunneling barrier. Comparison of the anodization profiles with SIMS depth profiles and RBS spectra shows that the anodization spectroscopy can be used to characterize the junction quality.
|Number of pages||4|
|Journal||Nuclear Instruments and Methods in Physics Research. Section B: Beam Interactions with Materials and Atoms|
|Publication status||Published - 2 Jun 1993|
|MoE publication type||A1 Journal article-refereed|
- Josephson junction