Comparison of anodization spectroscopy with SIMS and RBS measurements for the characterization of Nb/AlAlOx/NB Josephson junction structures

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Abstract

The thin tunneling barrier in a Nb/AlAlOx/Nb was characterized by anodization spectroscopy, SIMS and RBS. From the anodization spectroscopy we can get the film thickness from the voltage span and, most importantly, also the sharpness of the Nb/AlOx and Al/Nb interfaces around the tunneling barrier. Comparison of the anodization profiles with SIMS depth profiles and RBS spectra shows that the anodization spectroscopy can be used to characterize the junction quality.

Original languageEnglish
Pages (from-to)474-477
Number of pages4
JournalNuclear Instruments and Methods in Physics Research. Section B: Beam Interactions with Materials and Atoms
Volume79
Issue number1-4
DOIs
Publication statusPublished - 2 Jun 1993
MoE publication typeA1 Journal article-refereed

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Secondary ion mass spectrometry
Josephson junctions
secondary ion mass spectrometry
Spectroscopy
spectroscopy
sharpness
profiles
Film thickness
film thickness
Electric potential
electric potential

Keywords

  • Josephson junction

Cite this

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title = "Comparison of anodization spectroscopy with SIMS and RBS measurements for the characterization of Nb/AlAlOx/NB Josephson junction structures",
abstract = "The thin tunneling barrier in a Nb/AlAlOx/Nb was characterized by anodization spectroscopy, SIMS and RBS. From the anodization spectroscopy we can get the film thickness from the voltage span and, most importantly, also the sharpness of the Nb/AlOx and Al/Nb interfaces around the tunneling barrier. Comparison of the anodization profiles with SIMS depth profiles and RBS spectra shows that the anodization spectroscopy can be used to characterize the junction quality.",
keywords = "Josephson junction",
author = "Jaakko Saarilahti and Jari Likonen and Leif Gr{\"o}nberg",
note = "Project code: PUOT9124",
year = "1993",
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doi = "10.1016/0168-583X(93)95392-I",
language = "English",
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journal = "Nuclear Instruments and Methods in Physics Research. Section B: Beam Interactions with Materials and Atoms",
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T1 - Comparison of anodization spectroscopy with SIMS and RBS measurements for the characterization of Nb/AlAlOx/NB Josephson junction structures

AU - Saarilahti, Jaakko

AU - Likonen, Jari

AU - Grönberg, Leif

N1 - Project code: PUOT9124

PY - 1993/6/2

Y1 - 1993/6/2

N2 - The thin tunneling barrier in a Nb/AlAlOx/Nb was characterized by anodization spectroscopy, SIMS and RBS. From the anodization spectroscopy we can get the film thickness from the voltage span and, most importantly, also the sharpness of the Nb/AlOx and Al/Nb interfaces around the tunneling barrier. Comparison of the anodization profiles with SIMS depth profiles and RBS spectra shows that the anodization spectroscopy can be used to characterize the junction quality.

AB - The thin tunneling barrier in a Nb/AlAlOx/Nb was characterized by anodization spectroscopy, SIMS and RBS. From the anodization spectroscopy we can get the film thickness from the voltage span and, most importantly, also the sharpness of the Nb/AlOx and Al/Nb interfaces around the tunneling barrier. Comparison of the anodization profiles with SIMS depth profiles and RBS spectra shows that the anodization spectroscopy can be used to characterize the junction quality.

KW - Josephson junction

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U2 - 10.1016/0168-583X(93)95392-I

DO - 10.1016/0168-583X(93)95392-I

M3 - Article

AN - SCOPUS:50749132174

VL - 79

SP - 474

EP - 477

JO - Nuclear Instruments and Methods in Physics Research. Section B: Beam Interactions with Materials and Atoms

JF - Nuclear Instruments and Methods in Physics Research. Section B: Beam Interactions with Materials and Atoms

SN - 0168-583X

IS - 1-4

ER -