Comparison of anodization spectroscopy with SIMS and RBS measurements for the characterization of Nb/AlAlOx/NB Josephson junction structures

Jaakko Saarilahti; Jari Likonen; Leif Grönberg

doi:10.1016/0168-583X(93)95392-I

Comparison of anodization spectroscopy with SIMS and RBS measurements for the characterization of Nb/AlAlOx/NB Josephson junction structures

Jaakko Saarilahti^*
, Jari Likonen
, Leif Grönberg

^*Corresponding author for this work

Helsinki University of Technology

Research output: Contribution to journal › Article › Scientific › peer-review

2 Citations (Scopus)

Abstract

The thin tunneling barrier in a Nb/AlAlO_x/Nb was characterized by anodization spectroscopy, SIMS and RBS. From the anodization spectroscopy we can get the film thickness from the voltage span and, most importantly, also the sharpness of the Nb/AlO_x and Al/Nb interfaces around the tunneling barrier. Comparison of the anodization profiles with SIMS depth profiles and RBS spectra shows that the anodization spectroscopy can be used to characterize the junction quality.

Original language	English
Pages (from-to)	474-477
Number of pages	4
Journal	Nuclear Instruments and Methods in Physics Research. Section B: Beam Interactions with Materials and Atoms
Volume	79
Issue number	1-4
DOIs	https://doi.org/10.1016/0168-583X(93)95392-I
Publication status	Published - 2 Jun 1993
MoE publication type	A1 Journal article-refereed

Keywords

Josephson junction

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10.1016/0168-583X(93)95392-I

Cite this

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title = "Comparison of anodization spectroscopy with SIMS and RBS measurements for the characterization of Nb/AlAlOx/NB Josephson junction structures",

abstract = "The thin tunneling barrier in a Nb/AlAlOx/Nb was characterized by anodization spectroscopy, SIMS and RBS. From the anodization spectroscopy we can get the film thickness from the voltage span and, most importantly, also the sharpness of the Nb/AlOx and Al/Nb interfaces around the tunneling barrier. Comparison of the anodization profiles with SIMS depth profiles and RBS spectra shows that the anodization spectroscopy can be used to characterize the junction quality.",

keywords = "Josephson junction",

author = "Jaakko Saarilahti and Jari Likonen and Leif Gr{\"o}nberg",

note = " Project code: PUOT9124",

year = "1993",

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doi = "10.1016/0168-583X(93)95392-I",

language = "English",

volume = "79",

pages = "474--477",

journal = "Nuclear Instruments and Methods in Physics Research. Section B: Beam Interactions with Materials and Atoms",

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Saarilahti, J, Likonen, J & Grönberg, L 1993, 'Comparison of anodization spectroscopy with SIMS and RBS measurements for the characterization of Nb/AlAlOx/NB Josephson junction structures', Nuclear Instruments and Methods in Physics Research. Section B: Beam Interactions with Materials and Atoms, vol. 79, no. 1-4, pp. 474-477. https://doi.org/10.1016/0168-583X(93)95392-I

Comparison of anodization spectroscopy with SIMS and RBS measurements for the characterization of Nb/AlAlOx/NB Josephson junction structures. / Saarilahti, Jaakko; Likonen, Jari; Grönberg, Leif.
In: Nuclear Instruments and Methods in Physics Research. Section B: Beam Interactions with Materials and Atoms, Vol. 79, No. 1-4, 02.06.1993, p. 474-477.

Research output: Contribution to journal › Article › Scientific › peer-review

TY - JOUR

T1 - Comparison of anodization spectroscopy with SIMS and RBS measurements for the characterization of Nb/AlAlOx/NB Josephson junction structures

AU - Saarilahti, Jaakko

AU - Likonen, Jari

AU - Grönberg, Leif

N1 - Project code: PUOT9124

PY - 1993/6/2

Y1 - 1993/6/2

N2 - The thin tunneling barrier in a Nb/AlAlOx/Nb was characterized by anodization spectroscopy, SIMS and RBS. From the anodization spectroscopy we can get the film thickness from the voltage span and, most importantly, also the sharpness of the Nb/AlOx and Al/Nb interfaces around the tunneling barrier. Comparison of the anodization profiles with SIMS depth profiles and RBS spectra shows that the anodization spectroscopy can be used to characterize the junction quality.

AB - The thin tunneling barrier in a Nb/AlAlOx/Nb was characterized by anodization spectroscopy, SIMS and RBS. From the anodization spectroscopy we can get the film thickness from the voltage span and, most importantly, also the sharpness of the Nb/AlOx and Al/Nb interfaces around the tunneling barrier. Comparison of the anodization profiles with SIMS depth profiles and RBS spectra shows that the anodization spectroscopy can be used to characterize the junction quality.

KW - Josephson junction

UR - https://www.scopus.com/pages/publications/50749132174

U2 - 10.1016/0168-583X(93)95392-I

DO - 10.1016/0168-583X(93)95392-I

M3 - Article

AN - SCOPUS:50749132174

SN - 0168-583X

VL - 79

SP - 474

EP - 477

JO - Nuclear Instruments and Methods in Physics Research. Section B: Beam Interactions with Materials and Atoms

JF - Nuclear Instruments and Methods in Physics Research. Section B: Beam Interactions with Materials and Atoms

IS - 1-4

ER -

Comparison of anodization spectroscopy with SIMS and RBS measurements for the characterization of Nb/AlAlOx/NB Josephson junction structures

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Keywords

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