Comparison of electromigration resistance changes in multilayer Al-Si/Ti and Al-Si/Ta interconnects

Manuela Finetti; Ilkka Suni; Giorgio DeSanti; Lusia Bacci; Claudia Caprile

doi:10.1557/PROC-71-297

Comparison of electromigration resistance changes in multilayer Al-Si/Ti and Al-Si/Ta interconnects

Manuela Finetti
, Ilkka Suni
, Giorgio DeSanti
, Lusia Bacci
, Claudia Caprile

VTT Technical Research Centre of Finland

LAMEL Institute
VTT (former employee or external)
SGS Microelettronica S.p.A.

Research output: Chapter in Book/Report/Conference proceeding › Conference article in proceedings › Scientific › peer-review

Abstract

We have applied a temperature-ramp resistance analysis to investigate electromigration effects in unpassivated Al-Si/Ta multilayer structures. The results are compared to the behaviour previously observed in Al-Si/Ti interconnects. For comparison, single layer Al-Si metallizations were also studied.

Original language	English
Title of host publication	Materials Issues in Silicon Integrated Circuit Processing
Editors	Marc Wittmer, James Stimmell, Michael D. Strathman
Place of Publication	Pittsburgh
Publisher	Materials Research Society
Pages	297-302
ISBN (Print)	978-0-931837-37-1
DOIs	https://doi.org/10.1557/PROC-71-297
Publication status	Published - 1986
MoE publication type	A4 Article in a conference publication
Event	Materials Research Symposium 1986 - Palo Alto, United States Duration: 15 Apr 1986 → 18 Apr 1986

Publication series

Series	Materials Research Society Symposia Proceedings
Volume	71
ISSN	0272-9172

Conference

Conference	Materials Research Symposium 1986
Country/Territory	United States
City	Palo Alto
Period	15/04/86 → 18/04/86

Access to Document

10.1557/PROC-71-297

Cite this

Finetti, Manuela ; Suni, Ilkka ; DeSanti, Giorgio et al. / Comparison of electromigration resistance changes in multilayer Al-Si/Ti and Al-Si/Ta interconnects. Materials Issues in Silicon Integrated Circuit Processing. editor / Marc Wittmer ; James Stimmell ; Michael D. Strathman. Pittsburgh : Materials Research Society, 1986. pp. 297-302 (Materials Research Society Symposia Proceedings, Vol. 71).

@inproceedings{dd1caeb59e7c446a88f3434db0dec8a7,

title = "Comparison of electromigration resistance changes in multilayer Al-Si/Ti and Al-Si/Ta interconnects",

abstract = "We have applied a temperature-ramp resistance analysis to investigate electromigration effects in unpassivated Al-Si/Ta multilayer structures. The results are compared to the behaviour previously observed in Al-Si/Ti interconnects. For comparison, single layer Al-Si metallizations were also studied.",

author = "Manuela Finetti and Ilkka Suni and Giorgio DeSanti and Lusia Bacci and Claudia Caprile",

year = "1986",

doi = "10.1557/PROC-71-297",

language = "English",

isbn = "978-0-931837-37-1",

series = "Materials Research Society Symposia Proceedings",

publisher = "Materials Research Society",

pages = "297--302",

editor = "Marc Wittmer and James Stimmell and Strathman, \{Michael D.\}",

booktitle = "Materials Issues in Silicon Integrated Circuit Processing",

address = "United States",

note = "Materials Research Symposium 1986 ; Conference date: 15-04-1986 Through 18-04-1986",

}

Finetti, M, Suni, I, DeSanti, G, Bacci, L & Caprile, C 1986, Comparison of electromigration resistance changes in multilayer Al-Si/Ti and Al-Si/Ta interconnects. in M Wittmer, J Stimmell & MD Strathman (eds), Materials Issues in Silicon Integrated Circuit Processing. Materials Research Society, Pittsburgh, Materials Research Society Symposia Proceedings, vol. 71, pp. 297-302, Materials Research Symposium 1986, Palo Alto, California, United States, 15/04/86. https://doi.org/10.1557/PROC-71-297

Comparison of electromigration resistance changes in multilayer Al-Si/Ti and Al-Si/Ta interconnects. / Finetti, Manuela; Suni, Ilkka; DeSanti, Giorgio et al.
Materials Issues in Silicon Integrated Circuit Processing. ed. / Marc Wittmer; James Stimmell; Michael D. Strathman. Pittsburgh: Materials Research Society, 1986. p. 297-302 (Materials Research Society Symposia Proceedings, Vol. 71).

Research output: Chapter in Book/Report/Conference proceeding › Conference article in proceedings › Scientific › peer-review

TY - GEN

T1 - Comparison of electromigration resistance changes in multilayer Al-Si/Ti and Al-Si/Ta interconnects

AU - Finetti, Manuela

AU - Suni, Ilkka

AU - DeSanti, Giorgio

AU - Bacci, Lusia

AU - Caprile, Claudia

PY - 1986

Y1 - 1986

N2 - We have applied a temperature-ramp resistance analysis to investigate electromigration effects in unpassivated Al-Si/Ta multilayer structures. The results are compared to the behaviour previously observed in Al-Si/Ti interconnects. For comparison, single layer Al-Si metallizations were also studied.

AB - We have applied a temperature-ramp resistance analysis to investigate electromigration effects in unpassivated Al-Si/Ta multilayer structures. The results are compared to the behaviour previously observed in Al-Si/Ti interconnects. For comparison, single layer Al-Si metallizations were also studied.

U2 - 10.1557/PROC-71-297

DO - 10.1557/PROC-71-297

M3 - Conference article in proceedings

SN - 978-0-931837-37-1

T3 - Materials Research Society Symposia Proceedings

SP - 297

EP - 302

BT - Materials Issues in Silicon Integrated Circuit Processing

A2 - Wittmer, Marc

A2 - Stimmell, James

A2 - Strathman, Michael D.

PB - Materials Research Society

CY - Pittsburgh

T2 - Materials Research Symposium 1986

Y2 - 15 April 1986 through 18 April 1986

ER -

Finetti M, Suni I, DeSanti G, Bacci L, Caprile C. Comparison of electromigration resistance changes in multilayer Al-Si/Ti and Al-Si/Ta interconnects. In Wittmer M, Stimmell J, Strathman MD, editors, Materials Issues in Silicon Integrated Circuit Processing. Pittsburgh: Materials Research Society. 1986. p. 297-302. (Materials Research Society Symposia Proceedings, Vol. 71). doi: 10.1557/PROC-71-297

Comparison of electromigration resistance changes in multilayer Al-Si/Ti and Al-Si/Ta interconnects

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