Comparison of electron-phonon and hole-phonon energy loss rates in silicon

J.S. Richardson-Bullock; M.J. Prest; V.A. Shah; David Gunnarsson; Mika Prunnila; A. Dobbie; M. Myronov; R.J.H. Morris; T.E. Whall; E.H.C. Parker; D.R. Leadley

doi:10.1016/j.sse.2014.09.002

Comparison of electron-phonon and hole-phonon energy loss rates in silicon

J.S. Richardson-Bullock (Corresponding Author), M.J. Prest, V.A. Shah, David Gunnarsson, Mika Prunnila, A. Dobbie, M. Myronov, R.J.H. Morris, T.E. Whall, E.H.C. Parker, D.R. Leadley

University of Warwick

Research output: Contribution to journal › Article › Scientific › peer-review

Abstract

The hole-phonon energy loss rate in silicon is measured at phonon temperatures ranging from 300 mK to 700 mK. We demonstrate that it is approximately an order of magnitude higher than the corresponding electron-phonon energy loss rate over an identical temperature range.

Original language	English
Pages (from-to)	40-43
Journal	Solid-State Electronics
Volume	103
DOIs	https://doi.org/10.1016/j.sse.2014.09.002
Publication status	Published - 2015
MoE publication type	A1 Journal article-refereed

Keywords

couplings
electrons
phonons
energy-loss rate

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10.1016/j.sse.2014.09.002

Cite this

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title = "Comparison of electron-phonon and hole-phonon energy loss rates in silicon",

abstract = "The hole-phonon energy loss rate in silicon is measured at phonon temperatures ranging from 300 mK to 700 mK. We demonstrate that it is approximately an order of magnitude higher than the corresponding electron-phonon energy loss rate over an identical temperature range.",

keywords = "couplings, electrons, phonons, energy-loss rate",

author = "J.S. Richardson-Bullock and M.J. Prest and V.A. Shah and David Gunnarsson and Mika Prunnila and A. Dobbie and M. Myronov and R.J.H. Morris and T.E. Whall and E.H.C. Parker and D.R. Leadley",

year = "2015",

doi = "10.1016/j.sse.2014.09.002",

language = "English",

volume = "103",

pages = "40--43",

journal = "Solid-State Electronics",

issn = "0038-1101",

publisher = "Elsevier",

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TY - JOUR

T1 - Comparison of electron-phonon and hole-phonon energy loss rates in silicon

AU - Richardson-Bullock, J.S.

AU - Prest, M.J.

AU - Shah, V.A.

AU - Gunnarsson, David

AU - Prunnila, Mika

AU - Dobbie, A.

AU - Myronov, M.

AU - Morris, R.J.H.

AU - Whall, T.E.

AU - Parker, E.H.C.

AU - Leadley, D.R.

PY - 2015

Y1 - 2015

N2 - The hole-phonon energy loss rate in silicon is measured at phonon temperatures ranging from 300 mK to 700 mK. We demonstrate that it is approximately an order of magnitude higher than the corresponding electron-phonon energy loss rate over an identical temperature range.

AB - The hole-phonon energy loss rate in silicon is measured at phonon temperatures ranging from 300 mK to 700 mK. We demonstrate that it is approximately an order of magnitude higher than the corresponding electron-phonon energy loss rate over an identical temperature range.

KW - couplings

KW - electrons

KW - phonons

KW - energy-loss rate

U2 - 10.1016/j.sse.2014.09.002

DO - 10.1016/j.sse.2014.09.002

M3 - Article

SN - 0038-1101

VL - 103

SP - 40

EP - 43

JO - Solid-State Electronics

JF - Solid-State Electronics

ER -

Comparison of electron-phonon and hole-phonon energy loss rates in silicon

Abstract

Keywords

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