Comparison of electron-phonon and hole-phonon energy loss rates in silicon

J.S. Richardson-Bullock (Corresponding Author), M.J. Prest, V.A. Shah, David Gunnarsson, Mika Prunnila, A. Dobbie, M. Myronov, R.J.H. Morris, T.E. Whall, E.H.C. Parker, D.R. Leadley

    Research output: Contribution to journalArticleScientificpeer-review

    Abstract

    The hole-phonon energy loss rate in silicon is measured at phonon temperatures ranging from 300 mK to 700 mK. We demonstrate that it is approximately an order of magnitude higher than the corresponding electron-phonon energy loss rate over an identical temperature range.
    Original languageEnglish
    Pages (from-to)40-43
    JournalSolid-State Electronics
    Volume103
    DOIs
    Publication statusPublished - 2015
    MoE publication typeA1 Journal article-refereed

    Keywords

    • couplings
    • electrons
    • phonons
    • energy-loss rate

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    Richardson-Bullock, J. S., Prest, M. J., Shah, V. A., Gunnarsson, D., Prunnila, M., Dobbie, A., Myronov, M., Morris, R. J. H., Whall, T. E., Parker, E. H. C., & Leadley, D. R. (2015). Comparison of electron-phonon and hole-phonon energy loss rates in silicon. Solid-State Electronics, 103, 40-43. https://doi.org/10.1016/j.sse.2014.09.002