Comparison of electron-phonon and hole-phonon energy loss rates in silicon

J.S. Richardson-Bullock (Corresponding Author), M.J. Prest, V.A. Shah, David Gunnarsson, Mika Prunnila, A. Dobbie, M. Myronov, R.J.H. Morris, T.E. Whall, E.H.C. Parker, D.R. Leadley

Research output: Contribution to journalArticleScientificpeer-review

Abstract

The hole-phonon energy loss rate in silicon is measured at phonon temperatures ranging from 300 mK to 700 mK. We demonstrate that it is approximately an order of magnitude higher than the corresponding electron-phonon energy loss rate over an identical temperature range.
Original languageEnglish
Pages (from-to)40-43
JournalSolid-State Electronics
Volume103
DOIs
Publication statusPublished - 2015
MoE publication typeA1 Journal article-refereed

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Silicon
Energy dissipation
energy dissipation
Electrons
silicon
electrons
Temperature
temperature

Keywords

  • couplings
  • electrons
  • phonons
  • energy-loss rate

Cite this

Richardson-Bullock, J. S., Prest, M. J., Shah, V. A., Gunnarsson, D., Prunnila, M., Dobbie, A., ... Leadley, D. R. (2015). Comparison of electron-phonon and hole-phonon energy loss rates in silicon. Solid-State Electronics, 103, 40-43. https://doi.org/10.1016/j.sse.2014.09.002
Richardson-Bullock, J.S. ; Prest, M.J. ; Shah, V.A. ; Gunnarsson, David ; Prunnila, Mika ; Dobbie, A. ; Myronov, M. ; Morris, R.J.H. ; Whall, T.E. ; Parker, E.H.C. ; Leadley, D.R. / Comparison of electron-phonon and hole-phonon energy loss rates in silicon. In: Solid-State Electronics. 2015 ; Vol. 103. pp. 40-43.
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Richardson-Bullock, JS, Prest, MJ, Shah, VA, Gunnarsson, D, Prunnila, M, Dobbie, A, Myronov, M, Morris, RJH, Whall, TE, Parker, EHC & Leadley, DR 2015, 'Comparison of electron-phonon and hole-phonon energy loss rates in silicon', Solid-State Electronics, vol. 103, pp. 40-43. https://doi.org/10.1016/j.sse.2014.09.002

Comparison of electron-phonon and hole-phonon energy loss rates in silicon. / Richardson-Bullock, J.S. (Corresponding Author); Prest, M.J.; Shah, V.A.; Gunnarsson, David; Prunnila, Mika; Dobbie, A.; Myronov, M.; Morris, R.J.H.; Whall, T.E.; Parker, E.H.C.; Leadley, D.R.

In: Solid-State Electronics, Vol. 103, 2015, p. 40-43.

Research output: Contribution to journalArticleScientificpeer-review

TY - JOUR

T1 - Comparison of electron-phonon and hole-phonon energy loss rates in silicon

AU - Richardson-Bullock, J.S.

AU - Prest, M.J.

AU - Shah, V.A.

AU - Gunnarsson, David

AU - Prunnila, Mika

AU - Dobbie, A.

AU - Myronov, M.

AU - Morris, R.J.H.

AU - Whall, T.E.

AU - Parker, E.H.C.

AU - Leadley, D.R.

PY - 2015

Y1 - 2015

N2 - The hole-phonon energy loss rate in silicon is measured at phonon temperatures ranging from 300 mK to 700 mK. We demonstrate that it is approximately an order of magnitude higher than the corresponding electron-phonon energy loss rate over an identical temperature range.

AB - The hole-phonon energy loss rate in silicon is measured at phonon temperatures ranging from 300 mK to 700 mK. We demonstrate that it is approximately an order of magnitude higher than the corresponding electron-phonon energy loss rate over an identical temperature range.

KW - couplings

KW - electrons

KW - phonons

KW - energy-loss rate

U2 - 10.1016/j.sse.2014.09.002

DO - 10.1016/j.sse.2014.09.002

M3 - Article

VL - 103

SP - 40

EP - 43

JO - Solid-State Electronics

JF - Solid-State Electronics

SN - 0038-1101

ER -