Comparison of electron-phonon and hole-phonon energy loss rates in silicon

J.S. Richardson-Bullock (Corresponding Author), M.J. Prest, V.A. Shah, David Gunnarsson, Mika Prunnila, A. Dobbie, M. Myronov, R.J.H. Morris, T.E. Whall, E.H.C. Parker, D.R. Leadley

    Research output: Contribution to journalArticleScientificpeer-review

    Abstract

    The hole-phonon energy loss rate in silicon is measured at phonon temperatures ranging from 300 mK to 700 mK. We demonstrate that it is approximately an order of magnitude higher than the corresponding electron-phonon energy loss rate over an identical temperature range.
    Original languageEnglish
    Pages (from-to)40-43
    JournalSolid-State Electronics
    Volume103
    DOIs
    Publication statusPublished - 2015
    MoE publication typeA1 Journal article-refereed

    Fingerprint

    Silicon
    Energy dissipation
    energy dissipation
    Electrons
    silicon
    electrons
    Temperature
    temperature

    Keywords

    • couplings
    • electrons
    • phonons
    • energy-loss rate

    Cite this

    Richardson-Bullock, J. S., Prest, M. J., Shah, V. A., Gunnarsson, D., Prunnila, M., Dobbie, A., ... Leadley, D. R. (2015). Comparison of electron-phonon and hole-phonon energy loss rates in silicon. Solid-State Electronics, 103, 40-43. https://doi.org/10.1016/j.sse.2014.09.002
    Richardson-Bullock, J.S. ; Prest, M.J. ; Shah, V.A. ; Gunnarsson, David ; Prunnila, Mika ; Dobbie, A. ; Myronov, M. ; Morris, R.J.H. ; Whall, T.E. ; Parker, E.H.C. ; Leadley, D.R. / Comparison of electron-phonon and hole-phonon energy loss rates in silicon. In: Solid-State Electronics. 2015 ; Vol. 103. pp. 40-43.
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    abstract = "The hole-phonon energy loss rate in silicon is measured at phonon temperatures ranging from 300 mK to 700 mK. We demonstrate that it is approximately an order of magnitude higher than the corresponding electron-phonon energy loss rate over an identical temperature range.",
    keywords = "couplings, electrons, phonons, energy-loss rate",
    author = "J.S. Richardson-Bullock and M.J. Prest and V.A. Shah and David Gunnarsson and Mika Prunnila and A. Dobbie and M. Myronov and R.J.H. Morris and T.E. Whall and E.H.C. Parker and D.R. Leadley",
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    Richardson-Bullock, JS, Prest, MJ, Shah, VA, Gunnarsson, D, Prunnila, M, Dobbie, A, Myronov, M, Morris, RJH, Whall, TE, Parker, EHC & Leadley, DR 2015, 'Comparison of electron-phonon and hole-phonon energy loss rates in silicon', Solid-State Electronics, vol. 103, pp. 40-43. https://doi.org/10.1016/j.sse.2014.09.002

    Comparison of electron-phonon and hole-phonon energy loss rates in silicon. / Richardson-Bullock, J.S. (Corresponding Author); Prest, M.J.; Shah, V.A.; Gunnarsson, David; Prunnila, Mika; Dobbie, A.; Myronov, M.; Morris, R.J.H.; Whall, T.E.; Parker, E.H.C.; Leadley, D.R.

    In: Solid-State Electronics, Vol. 103, 2015, p. 40-43.

    Research output: Contribution to journalArticleScientificpeer-review

    TY - JOUR

    T1 - Comparison of electron-phonon and hole-phonon energy loss rates in silicon

    AU - Richardson-Bullock, J.S.

    AU - Prest, M.J.

    AU - Shah, V.A.

    AU - Gunnarsson, David

    AU - Prunnila, Mika

    AU - Dobbie, A.

    AU - Myronov, M.

    AU - Morris, R.J.H.

    AU - Whall, T.E.

    AU - Parker, E.H.C.

    AU - Leadley, D.R.

    PY - 2015

    Y1 - 2015

    N2 - The hole-phonon energy loss rate in silicon is measured at phonon temperatures ranging from 300 mK to 700 mK. We demonstrate that it is approximately an order of magnitude higher than the corresponding electron-phonon energy loss rate over an identical temperature range.

    AB - The hole-phonon energy loss rate in silicon is measured at phonon temperatures ranging from 300 mK to 700 mK. We demonstrate that it is approximately an order of magnitude higher than the corresponding electron-phonon energy loss rate over an identical temperature range.

    KW - couplings

    KW - electrons

    KW - phonons

    KW - energy-loss rate

    U2 - 10.1016/j.sse.2014.09.002

    DO - 10.1016/j.sse.2014.09.002

    M3 - Article

    VL - 103

    SP - 40

    EP - 43

    JO - Solid-State Electronics

    JF - Solid-State Electronics

    SN - 0038-1101

    ER -