Comparison of electronic effects and stress effects in enhancing regrowth rate of ion-implanted amorphous silicon

C. Pai, Silvanus Lau, Ilkka Suni, Lazlo Csepregi

Research output: Contribution to journalArticleScientificpeer-review

5 Citations (Scopus)

Abstract

The electronic effects and stress effects for epitaxial regrowth rate enhancement in ion‐implanted Si were investigated. By co‐doping B and Ge into Si layers at the same time, the strain field introduced by these impurities in Si can be compensated. Significantly enhanced regrowth rates were obtained in B‐Ge co‐doped and stress‐free Si samples. In contrast, only a slight increase in regrowth rate was observed in the strained Si samples doped only with Ge. These results lead us to conclude that the regrowth rate enhancement of ion‐implanted Si is due mainly to the electronic effects.
Original languageEnglish
Pages (from-to)1214-1216
JournalApplied Physics Letters
Volume47
Issue number11
DOIs
Publication statusPublished - 4 Aug 1998
MoE publication typeA1 Journal article-refereed

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amorphous silicon
electronics
ions
augmentation
impurities

Cite this

Pai, C. ; Lau, Silvanus ; Suni, Ilkka ; Csepregi, Lazlo. / Comparison of electronic effects and stress effects in enhancing regrowth rate of ion-implanted amorphous silicon. In: Applied Physics Letters. 1998 ; Vol. 47, No. 11. pp. 1214-1216.
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Comparison of electronic effects and stress effects in enhancing regrowth rate of ion-implanted amorphous silicon. / Pai, C.; Lau, Silvanus; Suni, Ilkka; Csepregi, Lazlo.

In: Applied Physics Letters, Vol. 47, No. 11, 04.08.1998, p. 1214-1216.

Research output: Contribution to journalArticleScientificpeer-review

TY - JOUR

T1 - Comparison of electronic effects and stress effects in enhancing regrowth rate of ion-implanted amorphous silicon

AU - Pai, C.

AU - Lau, Silvanus

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AU - Csepregi, Lazlo

PY - 1998/8/4

Y1 - 1998/8/4

N2 - The electronic effects and stress effects for epitaxial regrowth rate enhancement in ion‐implanted Si were investigated. By co‐doping B and Ge into Si layers at the same time, the strain field introduced by these impurities in Si can be compensated. Significantly enhanced regrowth rates were obtained in B‐Ge co‐doped and stress‐free Si samples. In contrast, only a slight increase in regrowth rate was observed in the strained Si samples doped only with Ge. These results lead us to conclude that the regrowth rate enhancement of ion‐implanted Si is due mainly to the electronic effects.

AB - The electronic effects and stress effects for epitaxial regrowth rate enhancement in ion‐implanted Si were investigated. By co‐doping B and Ge into Si layers at the same time, the strain field introduced by these impurities in Si can be compensated. Significantly enhanced regrowth rates were obtained in B‐Ge co‐doped and stress‐free Si samples. In contrast, only a slight increase in regrowth rate was observed in the strained Si samples doped only with Ge. These results lead us to conclude that the regrowth rate enhancement of ion‐implanted Si is due mainly to the electronic effects.

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DO - 10.1063/1.96332

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JO - Applied Physics Letters

JF - Applied Physics Letters

SN - 0003-6951

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