Comparison of nonvolatile memory cells for molybdenum gate analog BeCMOS process

Hannu Ronkainen; K. Theqvist

doi:10.1109/ASDAM.2002.1088520

Comparison of nonvolatile memory cells for molybdenum gate analog BeCMOS process

Hannu Ronkainen, K. Theqvist

Micro Analog Systems Oy

Research output: Chapter in Book/Report/Conference proceeding › Conference article in proceedings › Scientific › peer-review

Abstract

Floating gate nonvolatile memory cells fabricated with a molybdenum gate triple well BeCMOS process are described. Programming, endurance and retention characteristics of two types of cells are compared. The first type is programmed through the gate oxide with Fowler-Nordheim tunnelling and the second through the control gate - floating gate silicon nitride dielectric with Frenkel-Poole emission. The measured endurance for both types was more than 10,000 cycles and the estimated retention more than 10 years.

Original language	English
Title of host publication	ASDAM '02: Proceedings of the Fourth International Conference on Advanced Semiconductor Devices and Microsystems
Subtitle of host publication	Smolenice Castle, Slovakia, 14-16 October 2002
Publisher	IEEE Institute of Electrical and Electronic Engineers
Pages	255-258
ISBN (Print)	0-7803-7276-X
DOIs	https://doi.org/10.1109/ASDAM.2002.1088520
Publication status	Published - 2002
MoE publication type	A4 Article in a conference publication

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10.1109/ASDAM.2002.1088520

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Ronkainen, H., & Theqvist, K. (2002). Comparison of nonvolatile memory cells for molybdenum gate analog BeCMOS process. In ASDAM '02: Proceedings of the Fourth International Conference on Advanced Semiconductor Devices and Microsystems: Smolenice Castle, Slovakia, 14-16 October 2002 (pp. 255-258). IEEE Institute of Electrical and Electronic Engineers. https://doi.org/10.1109/ASDAM.2002.1088520

@inproceedings{dc76592001e54a12a22e5f77e035425f,

title = "Comparison of nonvolatile memory cells for molybdenum gate analog BeCMOS process",

abstract = "Floating gate nonvolatile memory cells fabricated with a molybdenum gate triple well BeCMOS process are described. Programming, endurance and retention characteristics of two types of cells are compared. The first type is programmed through the gate oxide with Fowler-Nordheim tunnelling and the second through the control gate - floating gate silicon nitride dielectric with Frenkel-Poole emission. The measured endurance for both types was more than 10,000 cycles and the estimated retention more than 10 years.",

author = "Hannu Ronkainen and K. Theqvist",

year = "2002",

doi = "10.1109/ASDAM.2002.1088520",

language = "English",

isbn = "0-7803-7276-X",

pages = "255--258",

booktitle = "ASDAM '02: Proceedings of the Fourth International Conference on Advanced Semiconductor Devices and Microsystems",

publisher = "IEEE Institute of Electrical and Electronic Engineers",

address = "United States",

}

Ronkainen, H & Theqvist, K 2002, Comparison of nonvolatile memory cells for molybdenum gate analog BeCMOS process. in ASDAM '02: Proceedings of the Fourth International Conference on Advanced Semiconductor Devices and Microsystems: Smolenice Castle, Slovakia, 14-16 October 2002. IEEE Institute of Electrical and Electronic Engineers, pp. 255-258. https://doi.org/10.1109/ASDAM.2002.1088520

Comparison of nonvolatile memory cells for molybdenum gate analog BeCMOS process. / Ronkainen, Hannu; Theqvist, K.
ASDAM '02: Proceedings of the Fourth International Conference on Advanced Semiconductor Devices and Microsystems: Smolenice Castle, Slovakia, 14-16 October 2002. IEEE Institute of Electrical and Electronic Engineers, 2002. p. 255-258.

Research output: Chapter in Book/Report/Conference proceeding › Conference article in proceedings › Scientific › peer-review

TY - GEN

T1 - Comparison of nonvolatile memory cells for molybdenum gate analog BeCMOS process

AU - Ronkainen, Hannu

AU - Theqvist, K.

PY - 2002

Y1 - 2002

N2 - Floating gate nonvolatile memory cells fabricated with a molybdenum gate triple well BeCMOS process are described. Programming, endurance and retention characteristics of two types of cells are compared. The first type is programmed through the gate oxide with Fowler-Nordheim tunnelling and the second through the control gate - floating gate silicon nitride dielectric with Frenkel-Poole emission. The measured endurance for both types was more than 10,000 cycles and the estimated retention more than 10 years.

AB - Floating gate nonvolatile memory cells fabricated with a molybdenum gate triple well BeCMOS process are described. Programming, endurance and retention characteristics of two types of cells are compared. The first type is programmed through the gate oxide with Fowler-Nordheim tunnelling and the second through the control gate - floating gate silicon nitride dielectric with Frenkel-Poole emission. The measured endurance for both types was more than 10,000 cycles and the estimated retention more than 10 years.

U2 - 10.1109/ASDAM.2002.1088520

DO - 10.1109/ASDAM.2002.1088520

M3 - Conference article in proceedings

SN - 0-7803-7276-X

SP - 255

EP - 258

BT - ASDAM '02: Proceedings of the Fourth International Conference on Advanced Semiconductor Devices and Microsystems

PB - IEEE Institute of Electrical and Electronic Engineers

ER -

Ronkainen H, Theqvist K. Comparison of nonvolatile memory cells for molybdenum gate analog BeCMOS process. In ASDAM '02: Proceedings of the Fourth International Conference on Advanced Semiconductor Devices and Microsystems: Smolenice Castle, Slovakia, 14-16 October 2002. IEEE Institute of Electrical and Electronic Engineers. 2002. p. 255-258 doi: 10.1109/ASDAM.2002.1088520

Comparison of nonvolatile memory cells for molybdenum gate analog BeCMOS process

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