Floating gate nonvolatile memory cells fabricated with a molybdenum gate triple well BeCMOS process are described. Programming, endurance and retention characteristics of two types of cells are compared. The first type is programmed through the gate oxide with Fowler-Nordheim tunnelling and the second through the control gate - floating gate silicon nitride dielectric with Frenkel-Poole emission. The measured endurance for both types was more than 10,000 cycles and the estimated retention more than 10 years.
|Title of host publication||ASDAM '02: Proceedings of the Fourth International Conference on Advanced Semiconductor Devices and Microsystems|
|Subtitle of host publication||Smolenice Castle, Slovakia, 14-16 October 2002|
|Publisher||IEEE Institute of Electrical and Electronic Engineers|
|Publication status||Published - 2002|
|MoE publication type||A4 Article in a conference publication|