Comparison of nonvolatile memory cells for molybdenum gate analog BeCMOS process

Hannu Ronkainen, K. Theqvist

    Research output: Chapter in Book/Report/Conference proceedingConference article in proceedingsScientificpeer-review

    Abstract

    Floating gate nonvolatile memory cells fabricated with a molybdenum gate triple well BeCMOS process are described. Programming, endurance and retention characteristics of two types of cells are compared. The first type is programmed through the gate oxide with Fowler-Nordheim tunnelling and the second through the control gate - floating gate silicon nitride dielectric with Frenkel-Poole emission. The measured endurance for both types was more than 10,000 cycles and the estimated retention more than 10 years.
    Original languageEnglish
    Title of host publicationASDAM '02: Proceedings of the Fourth International Conference on Advanced Semiconductor Devices and Microsystems
    Subtitle of host publicationSmolenice Castle, Slovakia, 14-16 October 2002
    PublisherIEEE Institute of Electrical and Electronic Engineers
    Pages255-258
    ISBN (Print)0-7803-7276-X
    DOIs
    Publication statusPublished - 2002
    MoE publication typeA4 Article in a conference publication

    Fingerprint Dive into the research topics of 'Comparison of nonvolatile memory cells for molybdenum gate analog BeCMOS process'. Together they form a unique fingerprint.

    Cite this