Comparison of thermally and mechanically induced Si layer transfer in hydrogen-implanted Si wafers

Tobias Höchbauer (Corresponding Author), A. Misra, M. Nastasi, Kimmo Henttinen, T. Suni, Ilkka Suni, S.S. Lau, W. Ensinger

Research output: Contribution to journalArticleScientificpeer-review

15 Citations (Scopus)

Abstract

Hydrogen ion-implantation into Si and subsequent heat treatment has been shown to be an effective means of cleaving thin layer of Si from its parent wafer. This process has been called Smart CutTM or ion-cut. We investigated the cleavage process in H-implanted silicon samples, in which the ion-cut was provoked thermally and mechanically, respectively. A 〈1 0 0〉 oriented p-type silicon wafer was irradiated at room temperature with 100 keV H2+-ions to a dose of 5 × 1016 H2/cm2 and subsequently joined to a handle wafer. Ion-cutting was achieved by two different methods: (1) thermally by annealing to 350 °C and (2) mechanically by insertion of a razor blade sidewise into the bonded wafers near the bond interface. The H-concentration and the crystal damage depth profiles before and after the ion-cut were investigated through the combined use of elastic recoil detection analysis and Rutherford backscattering spectroscopy (RBS). The location at which the ion-cut occurred was determined by RBS in channeling mode and cross-section transmission electron spectroscopy. The ion-cut depth was found to be independent on the cutting method. The gained knowledge was correlated to the depth distribution of the H-platelet density in the as-implanted sample, which contains two separate peaks in the implantation zone. The obtained results suggest that the ion-cut location coincides with the depth of the H-platelet density peak located at a larger depth.
Original languageEnglish
Pages (from-to)257 - 263
Number of pages7
JournalNuclear Instruments and Methods in Physics Research. Section B: Beam Interactions with Materials and Atoms
Volume216
DOIs
Publication statusPublished - 2004
MoE publication typeA1 Journal article-refereed

Fingerprint

wafers
Hydrogen
Ions
hydrogen
ions
Rutherford backscattering spectroscopy
Platelets
platelets
backscattering
razor blades
Electron spectroscopy
silicon
hydrogen ions
Silicon wafers
Ion implantation
spectroscopy
electron spectroscopy
ion implantation
insertion
cleavage

Keywords

  • ion-cut
  • implantation
  • fracture mechanics
  • silicon on insulator

Cite this

Höchbauer, Tobias ; Misra, A. ; Nastasi, M. ; Henttinen, Kimmo ; Suni, T. ; Suni, Ilkka ; Lau, S.S. ; Ensinger, W. / Comparison of thermally and mechanically induced Si layer transfer in hydrogen-implanted Si wafers. In: Nuclear Instruments and Methods in Physics Research. Section B: Beam Interactions with Materials and Atoms. 2004 ; Vol. 216. pp. 257 - 263.
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Comparison of thermally and mechanically induced Si layer transfer in hydrogen-implanted Si wafers. / Höchbauer, Tobias (Corresponding Author); Misra, A.; Nastasi, M.; Henttinen, Kimmo; Suni, T.; Suni, Ilkka; Lau, S.S.; Ensinger, W.

In: Nuclear Instruments and Methods in Physics Research. Section B: Beam Interactions with Materials and Atoms, Vol. 216, 2004, p. 257 - 263.

Research output: Contribution to journalArticleScientificpeer-review

TY - JOUR

T1 - Comparison of thermally and mechanically induced Si layer transfer in hydrogen-implanted Si wafers

AU - Höchbauer, Tobias

AU - Misra, A.

AU - Nastasi, M.

AU - Henttinen, Kimmo

AU - Suni, T.

AU - Suni, Ilkka

AU - Lau, S.S.

AU - Ensinger, W.

PY - 2004

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N2 - Hydrogen ion-implantation into Si and subsequent heat treatment has been shown to be an effective means of cleaving thin layer of Si from its parent wafer. This process has been called Smart CutTM or ion-cut. We investigated the cleavage process in H-implanted silicon samples, in which the ion-cut was provoked thermally and mechanically, respectively. A 〈1 0 0〉 oriented p-type silicon wafer was irradiated at room temperature with 100 keV H2+-ions to a dose of 5 × 1016 H2/cm2 and subsequently joined to a handle wafer. Ion-cutting was achieved by two different methods: (1) thermally by annealing to 350 °C and (2) mechanically by insertion of a razor blade sidewise into the bonded wafers near the bond interface. The H-concentration and the crystal damage depth profiles before and after the ion-cut were investigated through the combined use of elastic recoil detection analysis and Rutherford backscattering spectroscopy (RBS). The location at which the ion-cut occurred was determined by RBS in channeling mode and cross-section transmission electron spectroscopy. The ion-cut depth was found to be independent on the cutting method. The gained knowledge was correlated to the depth distribution of the H-platelet density in the as-implanted sample, which contains two separate peaks in the implantation zone. The obtained results suggest that the ion-cut location coincides with the depth of the H-platelet density peak located at a larger depth.

AB - Hydrogen ion-implantation into Si and subsequent heat treatment has been shown to be an effective means of cleaving thin layer of Si from its parent wafer. This process has been called Smart CutTM or ion-cut. We investigated the cleavage process in H-implanted silicon samples, in which the ion-cut was provoked thermally and mechanically, respectively. A 〈1 0 0〉 oriented p-type silicon wafer was irradiated at room temperature with 100 keV H2+-ions to a dose of 5 × 1016 H2/cm2 and subsequently joined to a handle wafer. Ion-cutting was achieved by two different methods: (1) thermally by annealing to 350 °C and (2) mechanically by insertion of a razor blade sidewise into the bonded wafers near the bond interface. The H-concentration and the crystal damage depth profiles before and after the ion-cut were investigated through the combined use of elastic recoil detection analysis and Rutherford backscattering spectroscopy (RBS). The location at which the ion-cut occurred was determined by RBS in channeling mode and cross-section transmission electron spectroscopy. The ion-cut depth was found to be independent on the cutting method. The gained knowledge was correlated to the depth distribution of the H-platelet density in the as-implanted sample, which contains two separate peaks in the implantation zone. The obtained results suggest that the ion-cut location coincides with the depth of the H-platelet density peak located at a larger depth.

KW - ion-cut

KW - implantation

KW - fracture mechanics

KW - silicon on insulator

U2 - 10.1016/j.nimb.2003.11.043

DO - 10.1016/j.nimb.2003.11.043

M3 - Article

VL - 216

SP - 257

EP - 263

JO - Nuclear Instruments and Methods in Physics Research. Section B: Beam Interactions with Materials and Atoms

JF - Nuclear Instruments and Methods in Physics Research. Section B: Beam Interactions with Materials and Atoms

SN - 0168-583X

ER -