Concentration dependent and independent Si diffusion in ion-implanted GaAs

T. Ahlgren, Jari Likonen, J. Slotte, Jyrki Räisänen, M. Rajatora, J. Keinonen

Research output: Contribution to journalArticleScientificpeer-review

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Abstract

The diffusion of silicon has been studied in ⟨100⟩ GaAs implanted with 1×1016 40-keV 30Si+ ions/cm2. The Si concentration profiles were measured by secondary-ion mass spectrometry and nuclear resonance broadening techniques and the defect distributions by the Rutherford backscattering spectrometry channeling technique. The implanted samples were subjected to annealing in argon atmosphere in the temperature range 650 °C–850 °C. Two independent silicon diffusion mechanisms were observed. Concentration independent diffusion, observed as a broadening of the initial implanted distribution, is very slow and is assigned to Si atoms diffusing interstitially. Concentration dependent diffusion with low solubility and extending deep into the sample is quantitatively explained by diffusion via vacancies of Si atoms in the Ga and As sublattices. Diffusion coefficients together with carrier concentration as a function of Si concentration are given at different temperatures. The solid solubility of Si in GaAs has been determined and an exponential temperature dependence observed. An estimate of the amount of Si atoms residing on either Ga or As sites and the amount of Si+Ga−Si−As pairs is given. Finally, a fast method is presented for solving the diffusion equation numerically.
Original languageEnglish
Pages (from-to)4597-4603
Number of pages7
JournalPhysical Review B: Condensed Matter and Materials Physics
Volume56
Issue number8
DOIs
Publication statusPublished - 1997
MoE publication typeA1 Journal article-refereed

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Ions
ions
Silicon
Atoms
solubility
Solubility
atoms
silicon
Argon
Rutherford backscattering spectroscopy
sublattices
secondary ion mass spectrometry
Secondary ion mass spectrometry
gallium arsenide
backscattering
Temperature
Spectrometry
diffusion coefficient
Vacancies
Carrier concentration

Cite this

Ahlgren, T. ; Likonen, Jari ; Slotte, J. ; Räisänen, Jyrki ; Rajatora, M. ; Keinonen, J. / Concentration dependent and independent Si diffusion in ion-implanted GaAs. In: Physical Review B: Condensed Matter and Materials Physics. 1997 ; Vol. 56, No. 8. pp. 4597-4603.
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abstract = "The diffusion of silicon has been studied in ⟨100⟩ GaAs implanted with 1×1016 40-keV 30Si+ ions/cm2. The Si concentration profiles were measured by secondary-ion mass spectrometry and nuclear resonance broadening techniques and the defect distributions by the Rutherford backscattering spectrometry channeling technique. The implanted samples were subjected to annealing in argon atmosphere in the temperature range 650 °C–850 °C. Two independent silicon diffusion mechanisms were observed. Concentration independent diffusion, observed as a broadening of the initial implanted distribution, is very slow and is assigned to Si atoms diffusing interstitially. Concentration dependent diffusion with low solubility and extending deep into the sample is quantitatively explained by diffusion via vacancies of Si atoms in the Ga and As sublattices. Diffusion coefficients together with carrier concentration as a function of Si concentration are given at different temperatures. The solid solubility of Si in GaAs has been determined and an exponential temperature dependence observed. An estimate of the amount of Si atoms residing on either Ga or As sites and the amount of Si+Ga−Si−As pairs is given. Finally, a fast method is presented for solving the diffusion equation numerically.",
author = "T. Ahlgren and Jari Likonen and J. Slotte and Jyrki R{\"a}is{\"a}nen and M. Rajatora and J. Keinonen",
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Concentration dependent and independent Si diffusion in ion-implanted GaAs. / Ahlgren, T.; Likonen, Jari; Slotte, J.; Räisänen, Jyrki; Rajatora, M.; Keinonen, J.

In: Physical Review B: Condensed Matter and Materials Physics, Vol. 56, No. 8, 1997, p. 4597-4603.

Research output: Contribution to journalArticleScientificpeer-review

TY - JOUR

T1 - Concentration dependent and independent Si diffusion in ion-implanted GaAs

AU - Ahlgren, T.

AU - Likonen, Jari

AU - Slotte, J.

AU - Räisänen, Jyrki

AU - Rajatora, M.

AU - Keinonen, J.

N1 - Project code: KET4134

PY - 1997

Y1 - 1997

N2 - The diffusion of silicon has been studied in ⟨100⟩ GaAs implanted with 1×1016 40-keV 30Si+ ions/cm2. The Si concentration profiles were measured by secondary-ion mass spectrometry and nuclear resonance broadening techniques and the defect distributions by the Rutherford backscattering spectrometry channeling technique. The implanted samples were subjected to annealing in argon atmosphere in the temperature range 650 °C–850 °C. Two independent silicon diffusion mechanisms were observed. Concentration independent diffusion, observed as a broadening of the initial implanted distribution, is very slow and is assigned to Si atoms diffusing interstitially. Concentration dependent diffusion with low solubility and extending deep into the sample is quantitatively explained by diffusion via vacancies of Si atoms in the Ga and As sublattices. Diffusion coefficients together with carrier concentration as a function of Si concentration are given at different temperatures. The solid solubility of Si in GaAs has been determined and an exponential temperature dependence observed. An estimate of the amount of Si atoms residing on either Ga or As sites and the amount of Si+Ga−Si−As pairs is given. Finally, a fast method is presented for solving the diffusion equation numerically.

AB - The diffusion of silicon has been studied in ⟨100⟩ GaAs implanted with 1×1016 40-keV 30Si+ ions/cm2. The Si concentration profiles were measured by secondary-ion mass spectrometry and nuclear resonance broadening techniques and the defect distributions by the Rutherford backscattering spectrometry channeling technique. The implanted samples were subjected to annealing in argon atmosphere in the temperature range 650 °C–850 °C. Two independent silicon diffusion mechanisms were observed. Concentration independent diffusion, observed as a broadening of the initial implanted distribution, is very slow and is assigned to Si atoms diffusing interstitially. Concentration dependent diffusion with low solubility and extending deep into the sample is quantitatively explained by diffusion via vacancies of Si atoms in the Ga and As sublattices. Diffusion coefficients together with carrier concentration as a function of Si concentration are given at different temperatures. The solid solubility of Si in GaAs has been determined and an exponential temperature dependence observed. An estimate of the amount of Si atoms residing on either Ga or As sites and the amount of Si+Ga−Si−As pairs is given. Finally, a fast method is presented for solving the diffusion equation numerically.

U2 - 10.1103/PhysRevB.56.4597

DO - 10.1103/PhysRevB.56.4597

M3 - Article

VL - 56

SP - 4597

EP - 4603

JO - Physical Review B

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SN - 2469-9950

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