Concentration of interstitial and substitutional nitrogen in GaNxAs1-x

T. Ahlgren; E. Vainonen-Ahlgren; Jari Likonen; W. Li; Markus Pessa

doi:10.1063/1.1465522

Concentration of interstitial and substitutional nitrogen in GaNxAs1-x

T. Ahlgren, E. Vainonen-Ahlgren, Jari Likonen, W. Li, Markus Pessa

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Abstract

The interstitial to substitutional nitrogen atoms as a function of concentration in GaNAs were determined by nuclear reaction analysis utilizing the 14N(d,p)15N and 14N(d,α)12C reactions using ion channeling technique. The GaNAs films with mean nitrogen concentration between 0.3% and 3%, measured with secondary ion mass spectrometry and time-of-flight elastic recoil detection analysis, were grown using gas-source molecular-beam epitaxy. The fraction of nitrogen atoms occupying substitutional sites was observed to increase linearly with increasing nitrogen amount, while the concentration of interstitial nitrogen was nearly constant at 2×1019 cm−3 throughout the concentration region. Annealing at 750 °C decreases the concentration of interstitial nitrogen.

Original language	English
Pages (from-to)	2314-2316
Journal	Applied Physics Letters
Volume	80
Issue number	13
DOIs	https://doi.org/10.1063/1.1465522
Publication status	Published - 2002
MoE publication type	A1 Journal article-refereed

Keywords

gallium
gallium arsenide
iii-v semiconductors
nitrogen
semiconductor epitaxial layers
interstitials
channelling
rapid thermal annealing

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10.1063/1.1465522

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title = "Concentration of interstitial and substitutional nitrogen in GaNxAs1-x",

abstract = "The interstitial to substitutional nitrogen atoms as a function of concentration in GaNAs were determined by nuclear reaction analysis utilizing the 14N(d,p)15N and 14N(d,α)12C reactions using ion channeling technique. The GaNAs films with mean nitrogen concentration between 0.3% and 3%, measured with secondary ion mass spectrometry and time-of-flight elastic recoil detection analysis, were grown using gas-source molecular-beam epitaxy. The fraction of nitrogen atoms occupying substitutional sites was observed to increase linearly with increasing nitrogen amount, while the concentration of interstitial nitrogen was nearly constant at 2×1019 cm−3 throughout the concentration region. Annealing at 750 °C decreases the concentration of interstitial nitrogen.",

keywords = "gallium, gallium arsenide, iii-v semiconductors, nitrogen, semiconductor epitaxial layers, interstitials, channelling, rapid thermal annealing",

author = "T. Ahlgren and E. Vainonen-Ahlgren and Jari Likonen and W. Li and Markus Pessa",

year = "2002",

doi = "10.1063/1.1465522",

language = "English",

volume = "80",

pages = "2314--2316",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics",

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TY - JOUR

T1 - Concentration of interstitial and substitutional nitrogen in GaNxAs1-x

AU - Ahlgren, T.

AU - Vainonen-Ahlgren, E.

AU - Likonen, Jari

AU - Li, W.

AU - Pessa, Markus

PY - 2002

Y1 - 2002

N2 - The interstitial to substitutional nitrogen atoms as a function of concentration in GaNAs were determined by nuclear reaction analysis utilizing the 14N(d,p)15N and 14N(d,α)12C reactions using ion channeling technique. The GaNAs films with mean nitrogen concentration between 0.3% and 3%, measured with secondary ion mass spectrometry and time-of-flight elastic recoil detection analysis, were grown using gas-source molecular-beam epitaxy. The fraction of nitrogen atoms occupying substitutional sites was observed to increase linearly with increasing nitrogen amount, while the concentration of interstitial nitrogen was nearly constant at 2×1019 cm−3 throughout the concentration region. Annealing at 750 °C decreases the concentration of interstitial nitrogen.

AB - The interstitial to substitutional nitrogen atoms as a function of concentration in GaNAs were determined by nuclear reaction analysis utilizing the 14N(d,p)15N and 14N(d,α)12C reactions using ion channeling technique. The GaNAs films with mean nitrogen concentration between 0.3% and 3%, measured with secondary ion mass spectrometry and time-of-flight elastic recoil detection analysis, were grown using gas-source molecular-beam epitaxy. The fraction of nitrogen atoms occupying substitutional sites was observed to increase linearly with increasing nitrogen amount, while the concentration of interstitial nitrogen was nearly constant at 2×1019 cm−3 throughout the concentration region. Annealing at 750 °C decreases the concentration of interstitial nitrogen.

KW - gallium

KW - gallium arsenide

KW - iii-v semiconductors

KW - nitrogen

KW - semiconductor epitaxial layers

KW - interstitials

KW - channelling

KW - rapid thermal annealing

U2 - 10.1063/1.1465522

DO - 10.1063/1.1465522

M3 - Article

SN - 0003-6951

VL - 80

SP - 2314

EP - 2316

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 13

ER -

Concentration of interstitial and substitutional nitrogen in GaNxAs1-x

Abstract

Keywords

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