Concentration of interstitial and substitutional nitrogen in GaNxAs1-x

T. Ahlgren, E. Vainonen-Ahlgren, Jari Likonen, W. Li, Markus Pessa

Research output: Contribution to journalArticleScientificpeer-review

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Abstract

The interstitial to substitutional nitrogen atoms as a function of concentration in GaNAs were determined by nuclear reaction analysis utilizing the 14N(d,p)15N and 14N(d,α)12C reactions using ion channeling technique. The GaNAs films with mean nitrogen concentration between 0.3% and 3%, measured with secondary ion mass spectrometry and time-of-flight elastic recoil detection analysis, were grown using gas-source molecular-beam epitaxy. The fraction of nitrogen atoms occupying substitutional sites was observed to increase linearly with increasing nitrogen amount, while the concentration of interstitial nitrogen was nearly constant at 2×1019 cm−3 throughout the concentration region. Annealing at 750 °C decreases the concentration of interstitial nitrogen.
Original languageEnglish
Pages (from-to)2314-2316
JournalApplied Physics Letters
Volume80
Issue number13
DOIs
Publication statusPublished - 2002
MoE publication typeA1 Journal article-refereed

Fingerprint

interstitials
nitrogen
nitrogen atoms
nuclear reactions
secondary ion mass spectrometry
molecular beam epitaxy
annealing
gases
ions

Keywords

  • gallium
  • gallium arsenide
  • iii-v semiconductors
  • nitrogen
  • semiconductor epitaxial layers
  • interstitials
  • channelling
  • rapid thermal annealing

Cite this

Ahlgren, T. ; Vainonen-Ahlgren, E. ; Likonen, Jari ; Li, W. ; Pessa, Markus. / Concentration of interstitial and substitutional nitrogen in GaNxAs1-x. In: Applied Physics Letters. 2002 ; Vol. 80, No. 13. pp. 2314-2316.
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abstract = "The interstitial to substitutional nitrogen atoms as a function of concentration in GaNAs were determined by nuclear reaction analysis utilizing the 14N(d,p)15N and 14N(d,α)12C reactions using ion channeling technique. The GaNAs films with mean nitrogen concentration between 0.3{\%} and 3{\%}, measured with secondary ion mass spectrometry and time-of-flight elastic recoil detection analysis, were grown using gas-source molecular-beam epitaxy. The fraction of nitrogen atoms occupying substitutional sites was observed to increase linearly with increasing nitrogen amount, while the concentration of interstitial nitrogen was nearly constant at 2×1019 cm−3 throughout the concentration region. Annealing at 750 °C decreases the concentration of interstitial nitrogen.",
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author = "T. Ahlgren and E. Vainonen-Ahlgren and Jari Likonen and W. Li and Markus Pessa",
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Ahlgren, T, Vainonen-Ahlgren, E, Likonen, J, Li, W & Pessa, M 2002, 'Concentration of interstitial and substitutional nitrogen in GaNxAs1-x', Applied Physics Letters, vol. 80, no. 13, pp. 2314-2316. https://doi.org/10.1063/1.1465522

Concentration of interstitial and substitutional nitrogen in GaNxAs1-x. / Ahlgren, T.; Vainonen-Ahlgren, E.; Likonen, Jari; Li, W.; Pessa, Markus.

In: Applied Physics Letters, Vol. 80, No. 13, 2002, p. 2314-2316.

Research output: Contribution to journalArticleScientificpeer-review

TY - JOUR

T1 - Concentration of interstitial and substitutional nitrogen in GaNxAs1-x

AU - Ahlgren, T.

AU - Vainonen-Ahlgren, E.

AU - Likonen, Jari

AU - Li, W.

AU - Pessa, Markus

PY - 2002

Y1 - 2002

N2 - The interstitial to substitutional nitrogen atoms as a function of concentration in GaNAs were determined by nuclear reaction analysis utilizing the 14N(d,p)15N and 14N(d,α)12C reactions using ion channeling technique. The GaNAs films with mean nitrogen concentration between 0.3% and 3%, measured with secondary ion mass spectrometry and time-of-flight elastic recoil detection analysis, were grown using gas-source molecular-beam epitaxy. The fraction of nitrogen atoms occupying substitutional sites was observed to increase linearly with increasing nitrogen amount, while the concentration of interstitial nitrogen was nearly constant at 2×1019 cm−3 throughout the concentration region. Annealing at 750 °C decreases the concentration of interstitial nitrogen.

AB - The interstitial to substitutional nitrogen atoms as a function of concentration in GaNAs were determined by nuclear reaction analysis utilizing the 14N(d,p)15N and 14N(d,α)12C reactions using ion channeling technique. The GaNAs films with mean nitrogen concentration between 0.3% and 3%, measured with secondary ion mass spectrometry and time-of-flight elastic recoil detection analysis, were grown using gas-source molecular-beam epitaxy. The fraction of nitrogen atoms occupying substitutional sites was observed to increase linearly with increasing nitrogen amount, while the concentration of interstitial nitrogen was nearly constant at 2×1019 cm−3 throughout the concentration region. Annealing at 750 °C decreases the concentration of interstitial nitrogen.

KW - gallium

KW - gallium arsenide

KW - iii-v semiconductors

KW - nitrogen

KW - semiconductor epitaxial layers

KW - interstitials

KW - channelling

KW - rapid thermal annealing

U2 - 10.1063/1.1465522

DO - 10.1063/1.1465522

M3 - Article

VL - 80

SP - 2314

EP - 2316

JO - Applied Physics Letters

JF - Applied Physics Letters

SN - 0003-6951

IS - 13

ER -