Concentration of interstitial and substitutional nitrogen in GaNxAs1-x

T. Ahlgren, E. Vainonen-Ahlgren, Jari Likonen, W. Li, Markus Pessa

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    Abstract

    The interstitial to substitutional nitrogen atoms as a function of concentration in GaNAs were determined by nuclear reaction analysis utilizing the 14N(d,p)15N and 14N(d,α)12C reactions using ion channeling technique. The GaNAs films with mean nitrogen concentration between 0.3% and 3%, measured with secondary ion mass spectrometry and time-of-flight elastic recoil detection analysis, were grown using gas-source molecular-beam epitaxy. The fraction of nitrogen atoms occupying substitutional sites was observed to increase linearly with increasing nitrogen amount, while the concentration of interstitial nitrogen was nearly constant at 2×1019 cm−3 throughout the concentration region. Annealing at 750 °C decreases the concentration of interstitial nitrogen.
    Original languageEnglish
    Pages (from-to)2314-2316
    JournalApplied Physics Letters
    Volume80
    Issue number13
    DOIs
    Publication statusPublished - 2002
    MoE publication typeA1 Journal article-refereed

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    Keywords

    • gallium
    • gallium arsenide
    • iii-v semiconductors
    • nitrogen
    • semiconductor epitaxial layers
    • interstitials
    • channelling
    • rapid thermal annealing

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