Concentration of interstitial and substitutional nitrogen in GaNxAs1-x

T. Ahlgren, E. Vainonen-Ahlgren, Jari Likonen, W. Li, Markus Pessa

    Research output: Contribution to journalArticleScientificpeer-review

    59 Citations (Scopus)

    Abstract

    The interstitial to substitutional nitrogen atoms as a function of concentration in GaNAs were determined by nuclear reaction analysis utilizing the 14N(d,p)15N and 14N(d,α)12C reactions using ion channeling technique. The GaNAs films with mean nitrogen concentration between 0.3% and 3%, measured with secondary ion mass spectrometry and time-of-flight elastic recoil detection analysis, were grown using gas-source molecular-beam epitaxy. The fraction of nitrogen atoms occupying substitutional sites was observed to increase linearly with increasing nitrogen amount, while the concentration of interstitial nitrogen was nearly constant at 2×1019 cm−3 throughout the concentration region. Annealing at 750 °C decreases the concentration of interstitial nitrogen.
    Original languageEnglish
    Pages (from-to)2314-2316
    JournalApplied Physics Letters
    Volume80
    Issue number13
    DOIs
    Publication statusPublished - 2002
    MoE publication typeA1 Journal article-refereed

    Fingerprint

    interstitials
    nitrogen
    nitrogen atoms
    nuclear reactions
    secondary ion mass spectrometry
    molecular beam epitaxy
    annealing
    gases
    ions

    Keywords

    • gallium
    • gallium arsenide
    • iii-v semiconductors
    • nitrogen
    • semiconductor epitaxial layers
    • interstitials
    • channelling
    • rapid thermal annealing

    Cite this

    Ahlgren, T. ; Vainonen-Ahlgren, E. ; Likonen, Jari ; Li, W. ; Pessa, Markus. / Concentration of interstitial and substitutional nitrogen in GaNxAs1-x. In: Applied Physics Letters. 2002 ; Vol. 80, No. 13. pp. 2314-2316.
    @article{40441d6c24e74f7396fe42f3373eb912,
    title = "Concentration of interstitial and substitutional nitrogen in GaNxAs1-x",
    abstract = "The interstitial to substitutional nitrogen atoms as a function of concentration in GaNAs were determined by nuclear reaction analysis utilizing the 14N(d,p)15N and 14N(d,α)12C reactions using ion channeling technique. The GaNAs films with mean nitrogen concentration between 0.3{\%} and 3{\%}, measured with secondary ion mass spectrometry and time-of-flight elastic recoil detection analysis, were grown using gas-source molecular-beam epitaxy. The fraction of nitrogen atoms occupying substitutional sites was observed to increase linearly with increasing nitrogen amount, while the concentration of interstitial nitrogen was nearly constant at 2×1019 cm−3 throughout the concentration region. Annealing at 750 °C decreases the concentration of interstitial nitrogen.",
    keywords = "gallium, gallium arsenide, iii-v semiconductors, nitrogen, semiconductor epitaxial layers, interstitials, channelling, rapid thermal annealing",
    author = "T. Ahlgren and E. Vainonen-Ahlgren and Jari Likonen and W. Li and Markus Pessa",
    year = "2002",
    doi = "10.1063/1.1465522",
    language = "English",
    volume = "80",
    pages = "2314--2316",
    journal = "Applied Physics Letters",
    issn = "0003-6951",
    number = "13",

    }

    Ahlgren, T, Vainonen-Ahlgren, E, Likonen, J, Li, W & Pessa, M 2002, 'Concentration of interstitial and substitutional nitrogen in GaNxAs1-x', Applied Physics Letters, vol. 80, no. 13, pp. 2314-2316. https://doi.org/10.1063/1.1465522

    Concentration of interstitial and substitutional nitrogen in GaNxAs1-x. / Ahlgren, T.; Vainonen-Ahlgren, E.; Likonen, Jari; Li, W.; Pessa, Markus.

    In: Applied Physics Letters, Vol. 80, No. 13, 2002, p. 2314-2316.

    Research output: Contribution to journalArticleScientificpeer-review

    TY - JOUR

    T1 - Concentration of interstitial and substitutional nitrogen in GaNxAs1-x

    AU - Ahlgren, T.

    AU - Vainonen-Ahlgren, E.

    AU - Likonen, Jari

    AU - Li, W.

    AU - Pessa, Markus

    PY - 2002

    Y1 - 2002

    N2 - The interstitial to substitutional nitrogen atoms as a function of concentration in GaNAs were determined by nuclear reaction analysis utilizing the 14N(d,p)15N and 14N(d,α)12C reactions using ion channeling technique. The GaNAs films with mean nitrogen concentration between 0.3% and 3%, measured with secondary ion mass spectrometry and time-of-flight elastic recoil detection analysis, were grown using gas-source molecular-beam epitaxy. The fraction of nitrogen atoms occupying substitutional sites was observed to increase linearly with increasing nitrogen amount, while the concentration of interstitial nitrogen was nearly constant at 2×1019 cm−3 throughout the concentration region. Annealing at 750 °C decreases the concentration of interstitial nitrogen.

    AB - The interstitial to substitutional nitrogen atoms as a function of concentration in GaNAs were determined by nuclear reaction analysis utilizing the 14N(d,p)15N and 14N(d,α)12C reactions using ion channeling technique. The GaNAs films with mean nitrogen concentration between 0.3% and 3%, measured with secondary ion mass spectrometry and time-of-flight elastic recoil detection analysis, were grown using gas-source molecular-beam epitaxy. The fraction of nitrogen atoms occupying substitutional sites was observed to increase linearly with increasing nitrogen amount, while the concentration of interstitial nitrogen was nearly constant at 2×1019 cm−3 throughout the concentration region. Annealing at 750 °C decreases the concentration of interstitial nitrogen.

    KW - gallium

    KW - gallium arsenide

    KW - iii-v semiconductors

    KW - nitrogen

    KW - semiconductor epitaxial layers

    KW - interstitials

    KW - channelling

    KW - rapid thermal annealing

    U2 - 10.1063/1.1465522

    DO - 10.1063/1.1465522

    M3 - Article

    VL - 80

    SP - 2314

    EP - 2316

    JO - Applied Physics Letters

    JF - Applied Physics Letters

    SN - 0003-6951

    IS - 13

    ER -