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Concentration of interstitial and substitutional nitrogen in GaNxAs1-x
T. Ahlgren
, E. Vainonen-Ahlgren
,
Jari Likonen
, W. Li
, Markus Pessa
University of Helsinki
Tampere University of Technology (TUT)
Research output
:
Contribution to journal
›
Article
›
Scientific
›
peer-review
71
Citations (Scopus)
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Keyphrases
Substitutional Nitrogen
100%
Interstitial Nitrogen
100%
Nitrogen Atom
66%
GaNAs
66%
Annealing
33%
Nuclear Reaction Analysis
33%
Secondary Ion Mass Spectrometry
33%
Time-of-flight Elastic Recoil Detection Analysis
33%
Nitrogen Concentration
33%
Gas Source Molecular Beam Epitaxy
33%
Nitrogen Amount
33%
Substitutional Site
33%
Ion Channels
33%
INIS
concentration
100%
nitrogen
100%
interstitials
100%
atoms
28%
nitrogen 14
28%
detection
14%
increasing
14%
annealing
14%
films
14%
gases
14%
ions
14%
nitrogen 15
14%
nuclear reaction analysis
14%
mass spectrometry
14%
time-of-flight method
14%
recoils
14%
carbon 12
14%
molecular beam epitaxy
14%
ion channeling
14%
Engineering
Nitrogen Atom
100%
Nuclear Reaction Analysis
50%
Time-of-Flight
50%
Source Gas
50%
Substitutional Site
50%
Channelling
50%
Material Science
Molecular Beam Epitaxy
100%
Film
100%
Secondary Ion Mass Spectrometry
100%