Confinement effect in a quantum well dot induced by an InP stressor

J. Tulkki; Arja Heinämäki

doi:10.1103/PhysRevB.52.8239

Confinement effect in a quantum well dot induced by an InP stressor

J. Tulkki, Arja Heinämäki

VTT Technical Research Centre of Finland

Helsinki University of Technology

Research output: Contribution to journal › Article › Scientific › peer-review

101 Citations (Scopus)

Abstract

We have calculated the confinement effect in an In_1−xGa_xAs/GaAs quantum well dot induced by a dislocation-free InP stressor island. The energy levels were calculated by including the strain interaction and the band-edge confinement in the Luttinger-Kohn Hamiltonian. The maximum level spacing for the dipole-allowed interband E1→HH1 line spectrum was 20 meV. Our calculation also gives excellent agreement with recent measurements [H. Lipsanen, M. Sopanen, and J. Ahopelto, Phys. Rev. B 51, 13 868 (1995)] and provides indirect evidence of screened Coulomb interaction, tentatively addressed to slow carrier relaxation.

Original language	English
Pages (from-to)	8239-8243
Journal	Physical Review B: Condensed Matter
Volume	52
Issue number	11
DOIs	https://doi.org/10.1103/PhysRevB.52.8239
Publication status	Published - 1995
MoE publication type	A1 Journal article-refereed

Keywords

quantum wells

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10.1103/PhysRevB.52.8239

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abstract = "We have calculated the confinement effect in an In1−xGaxAs/GaAs quantum well dot induced by a dislocation-free InP stressor island. The energy levels were calculated by including the strain interaction and the band-edge confinement in the Luttinger-Kohn Hamiltonian. The maximum level spacing for the dipole-allowed interband E1→HH1 line spectrum was 20 meV. Our calculation also gives excellent agreement with recent measurements [H. Lipsanen, M. Sopanen, and J. Ahopelto, Phys. Rev. B 51, 13 868 (1995)] and provides indirect evidence of screened Coulomb interaction, tentatively addressed to slow carrier relaxation.",

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AB - We have calculated the confinement effect in an In1−xGaxAs/GaAs quantum well dot induced by a dislocation-free InP stressor island. The energy levels were calculated by including the strain interaction and the band-edge confinement in the Luttinger-Kohn Hamiltonian. The maximum level spacing for the dipole-allowed interband E1→HH1 line spectrum was 20 meV. Our calculation also gives excellent agreement with recent measurements [H. Lipsanen, M. Sopanen, and J. Ahopelto, Phys. Rev. B 51, 13 868 (1995)] and provides indirect evidence of screened Coulomb interaction, tentatively addressed to slow carrier relaxation.

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DO - 10.1103/PhysRevB.52.8239

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JO - Physical Review B: Condensed Matter

JF - Physical Review B: Condensed Matter

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ER -

Confinement effect in a quantum well dot induced by an InP stressor

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Keywords

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