Confinement effect in a quantum well dot induced by an InP stressor

J. Tulkki, Arja Heinämäki

Research output: Contribution to journalArticleScientificpeer-review

101 Citations (Scopus)

Abstract

We have calculated the confinement effect in an In1−xGaxAs/GaAs quantum well dot induced by a dislocation-free InP stressor island. The energy levels were calculated by including the strain interaction and the band-edge confinement in the Luttinger-Kohn Hamiltonian. The maximum level spacing for the dipole-allowed interband E1→HH1 line spectrum was 20 meV. Our calculation also gives excellent agreement with recent measurements [H. Lipsanen, M. Sopanen, and J. Ahopelto, Phys. Rev. B 51, 13 868 (1995)] and provides indirect evidence of screened Coulomb interaction, tentatively addressed to slow carrier relaxation.
Original languageEnglish
Pages (from-to)8239-8243
JournalPhysical Review B: Condensed Matter
Volume52
Issue number11
DOIs
Publication statusPublished - 1995
MoE publication typeA1 Journal article-refereed

Keywords

  • quantum wells

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