Conformality in Aluminum Oxide ALD Process Analyzed using 3rd Generation Silicon Based Lateral High Aspect Ratio Test Structures

Jihong Yim; Oili M.E. Ylivaara; Markku Ylilammi; Virpi Korpelainen; Eero Haimi; Emma Verkama; Mikko Utriainen; Riikka, L. Puurunen

Conformality in Aluminum Oxide ALD Process Analyzed using 3rd Generation Silicon Based Lateral High Aspect Ratio Test Structures

Jihong Yim, Oili M.E. Ylivaara, Markku Ylilammi, Virpi Korpelainen, Eero Haimi, Emma Verkama, Mikko Utriainen, Riikka, L. Puurunen

BA6201 RF microsystems

Aalto University

Research output: Contribution to conference › Conference Poster › Scientific › peer-review

Original language	English
Publication status	Published - Jun 2020
MoE publication type	Not Eligible
Event	AVS 20th International Conference on Atomic Layer Deposition featuring the 7th International Atomic Layer Etching Workshop - Virtual Conference Duration: 29 Jun 2020 → 1 Jul 2020 https://ald2020.avs.org/

Conference

Conference	AVS 20th International Conference on Atomic Layer Deposition featuring the 7th International Atomic Layer Etching Workshop
Abbreviated title	ALD/ALE 2020
Period	29/06/20 → 1/07/20
Internet address	https://ald2020.avs.org/

Keywords

ALD
conformality
LHAR

Cite this

Yim, J., Ylivaara, O. M. E., Ylilammi, M., Korpelainen, V., Haimi, E., Verkama, E., Utriainen, M., & Puurunen, R. L. (2020). Conformality in Aluminum Oxide ALD Process Analyzed using 3rd Generation Silicon Based Lateral High Aspect Ratio Test Structures. Poster session presented at AVS 20th International Conference on Atomic Layer Deposition featuring the 7th International Atomic Layer Etching Workshop.

@conference{20b703934fbd4e1eb88c8fcdcc398325,

title = "Conformality in Aluminum Oxide ALD Process Analyzed using 3rd Generation Silicon Based Lateral High Aspect Ratio Test Structures",

keywords = "ALD, conformality, LHAR",

author = "Jihong Yim and Ylivaara, {Oili M.E.} and Markku Ylilammi and Virpi Korpelainen and Eero Haimi and Emma Verkama and Mikko Utriainen and Puurunen, {Riikka, L.}",

year = "2020",

month = jun,

language = "English",

note = "AVS 20th International Conference on Atomic Layer Deposition featuring the 7th International Atomic Layer Etching Workshop, ALD/ALE 2020 ; Conference date: 29-06-2020 Through 01-07-2020",

url = "https://ald2020.avs.org/",

}

Yim, J, Ylivaara, OME, Ylilammi, M, Korpelainen, V, Haimi, E, Verkama, E, Utriainen, M & Puurunen, RL 2020, 'Conformality in Aluminum Oxide ALD Process Analyzed using 3rd Generation Silicon Based Lateral High Aspect Ratio Test Structures', AVS 20th International Conference on Atomic Layer Deposition featuring the 7th International Atomic Layer Etching Workshop, 29/06/20 - 1/07/20.

Conformality in Aluminum Oxide ALD Process Analyzed using 3rd Generation Silicon Based Lateral High Aspect Ratio Test Structures. / Yim, Jihong; Ylivaara, Oili M.E.; Ylilammi, Markku et al.
2020. Poster session presented at AVS 20th International Conference on Atomic Layer Deposition featuring the 7th International Atomic Layer Etching Workshop.

Research output: Contribution to conference › Conference Poster › Scientific › peer-review

TY - CONF

T1 - Conformality in Aluminum Oxide ALD Process Analyzed using 3rd Generation Silicon Based Lateral High Aspect Ratio Test Structures

AU - Yim, Jihong

AU - Ylivaara, Oili M.E.

AU - Ylilammi, Markku

AU - Korpelainen, Virpi

AU - Haimi, Eero

AU - Verkama, Emma

AU - Utriainen, Mikko

AU - Puurunen, Riikka, L.

PY - 2020/6

Y1 - 2020/6

KW - ALD

KW - conformality

KW - LHAR

M3 - Conference Poster

T2 - AVS 20th International Conference on Atomic Layer Deposition featuring the 7th International Atomic Layer Etching Workshop

Y2 - 29 June 2020 through 1 July 2020

ER -