Conformality in Aluminum Oxide ALD Process Analyzed using 3rd Generation Silicon Based Lateral High Aspect Ratio Test Structures

Jihong Yim, Oili M.E. Ylivaara, Markku Ylilammi, Virpi Korpelainen, Eero Haimi, Emma Verkama, Mikko Utriainen, Riikka, L. Puurunen

    Research output: Contribution to conferenceConference PosterScientificpeer-review

    Original languageEnglish
    Publication statusPublished - Jun 2020
    MoE publication typeNot Eligible
    EventAVS 20th International Conference on Atomic Layer Deposition featuring the 7th International Atomic Layer Etching Workshop - Virtual Conference
    Duration: 29 Jun 20201 Jul 2020
    https://ald2020.avs.org/

    Conference

    ConferenceAVS 20th International Conference on Atomic Layer Deposition featuring the 7th International Atomic Layer Etching Workshop
    Abbreviated titleALD/ALE 2020
    Period29/06/201/07/20
    Internet address

    Keywords

    • ALD
    • conformality
    • LHAR

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