Contact resistivity of silicon/silicide structures formed by thin film reactions

Manuela Finetti, S. Guerri, Piero Negrini, Andrea Scorzoni, Ilkka Suni

Research output: Contribution to journalArticleScientificpeer-review

17 Citations (Scopus)

Abstract

Contact resistance measurements were carried out on n+ -Si/Pd2Si, n+ -Si/NiSi, n+ -Si/TiSi2, p+ -Si/Pd2Si, p+ -Si/NiSi and p+ -Si/TiSi2 structures using fourterminal resistor test patterns. Parasitic effects due to lateral current crowding at the entrance of the contact were taken into account in an accurate interpretation of the experimental results. The effect of silicide side-walls within the silicon is discussed and corrections for this effect are presented. For comparison, data obtained on test patterns conforming to the standard transmission line model are reported. Finally, the active dopant concentration profiles near the n+ -SiTiSi2, n+ -SiPd2Si and p+ -SiTiSi2 interfaces were measured in order to derive the theoretical values of the contact resistivity and to compare these values with the experimental results.

Original languageEnglish
Pages (from-to)37 - 45
Number of pages9
JournalThin Solid Films
Volume130
Issue number1-2
DOIs
Publication statusPublished - 1985
MoE publication typeNot Eligible

Fingerprint

Silicon
Contact resistance
Resistors
electric contacts
Electric lines
Doping (additives)
Thin films
electrical resistivity
silicon
thin films
crowding
contact resistance
resistors
entrances
transmission lines
profiles

Cite this

Finetti, M., Guerri, S., Negrini, P., Scorzoni, A., & Suni, I. (1985). Contact resistivity of silicon/silicide structures formed by thin film reactions. Thin Solid Films, 130(1-2), 37 - 45. https://doi.org/10.1016/0040-6090(85)90294-9
Finetti, Manuela ; Guerri, S. ; Negrini, Piero ; Scorzoni, Andrea ; Suni, Ilkka. / Contact resistivity of silicon/silicide structures formed by thin film reactions. In: Thin Solid Films. 1985 ; Vol. 130, No. 1-2. pp. 37 - 45.
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abstract = "Contact resistance measurements were carried out on n+ -Si/Pd2Si, n+ -Si/NiSi, n+ -Si/TiSi2, p+ -Si/Pd2Si, p+ -Si/NiSi and p+ -Si/TiSi2 structures using fourterminal resistor test patterns. Parasitic effects due to lateral current crowding at the entrance of the contact were taken into account in an accurate interpretation of the experimental results. The effect of silicide side-walls within the silicon is discussed and corrections for this effect are presented. For comparison, data obtained on test patterns conforming to the standard transmission line model are reported. Finally, the active dopant concentration profiles near the n+ -SiTiSi2, n+ -SiPd2Si and p+ -SiTiSi2 interfaces were measured in order to derive the theoretical values of the contact resistivity and to compare these values with the experimental results.",
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Finetti, M, Guerri, S, Negrini, P, Scorzoni, A & Suni, I 1985, 'Contact resistivity of silicon/silicide structures formed by thin film reactions', Thin Solid Films, vol. 130, no. 1-2, pp. 37 - 45. https://doi.org/10.1016/0040-6090(85)90294-9

Contact resistivity of silicon/silicide structures formed by thin film reactions. / Finetti, Manuela; Guerri, S.; Negrini, Piero; Scorzoni, Andrea; Suni, Ilkka.

In: Thin Solid Films, Vol. 130, No. 1-2, 1985, p. 37 - 45.

Research output: Contribution to journalArticleScientificpeer-review

TY - JOUR

T1 - Contact resistivity of silicon/silicide structures formed by thin film reactions

AU - Finetti, Manuela

AU - Guerri, S.

AU - Negrini, Piero

AU - Scorzoni, Andrea

AU - Suni, Ilkka

PY - 1985

Y1 - 1985

N2 - Contact resistance measurements were carried out on n+ -Si/Pd2Si, n+ -Si/NiSi, n+ -Si/TiSi2, p+ -Si/Pd2Si, p+ -Si/NiSi and p+ -Si/TiSi2 structures using fourterminal resistor test patterns. Parasitic effects due to lateral current crowding at the entrance of the contact were taken into account in an accurate interpretation of the experimental results. The effect of silicide side-walls within the silicon is discussed and corrections for this effect are presented. For comparison, data obtained on test patterns conforming to the standard transmission line model are reported. Finally, the active dopant concentration profiles near the n+ -SiTiSi2, n+ -SiPd2Si and p+ -SiTiSi2 interfaces were measured in order to derive the theoretical values of the contact resistivity and to compare these values with the experimental results.

AB - Contact resistance measurements were carried out on n+ -Si/Pd2Si, n+ -Si/NiSi, n+ -Si/TiSi2, p+ -Si/Pd2Si, p+ -Si/NiSi and p+ -Si/TiSi2 structures using fourterminal resistor test patterns. Parasitic effects due to lateral current crowding at the entrance of the contact were taken into account in an accurate interpretation of the experimental results. The effect of silicide side-walls within the silicon is discussed and corrections for this effect are presented. For comparison, data obtained on test patterns conforming to the standard transmission line model are reported. Finally, the active dopant concentration profiles near the n+ -SiTiSi2, n+ -SiPd2Si and p+ -SiTiSi2 interfaces were measured in order to derive the theoretical values of the contact resistivity and to compare these values with the experimental results.

U2 - 10.1016/0040-6090(85)90294-9

DO - 10.1016/0040-6090(85)90294-9

M3 - Article

VL - 130

SP - 37

EP - 45

JO - Thin Solid Films

JF - Thin Solid Films

SN - 0040-6090

IS - 1-2

ER -