Contact resistance measurements were carried out on n+ -Si/Pd2Si, n+ -Si/NiSi, n+ -Si/TiSi2, p+ -Si/Pd2Si, p+ -Si/NiSi and p+ -Si/TiSi2 structures using fourterminal resistor test patterns. Parasitic effects due to lateral current crowding at the entrance of the contact were taken into account in an accurate interpretation of the experimental results. The effect of silicide side-walls within the silicon is discussed and corrections for this effect are presented. For comparison, data obtained on test patterns conforming to the standard transmission line model are reported. Finally, the active dopant concentration profiles near the n+ -SiTiSi2, n+ -SiPd2Si and p+ -SiTiSi2 interfaces were measured in order to derive the theoretical values of the contact resistivity and to compare these values with the experimental results.