Contact resistivity of silicon/silicide structures formed by thin film reactions

Manuela Finetti; S. Guerri; Piero Negrini; Andrea Scorzoni; Ilkka Suni

doi:10.1016/0040-6090(85)90294-9

Contact resistivity of silicon/silicide structures formed by thin film reactions

Manuela Finetti, S. Guerri, Piero Negrini, Andrea Scorzoni, Ilkka Suni

VTT Technical Research Centre of Finland

LAMEL Institute

Research output: Contribution to journal › Article › Scientific › peer-review

19 Citations (Scopus)

Abstract

Contact resistance measurements were carried out on n⁺ -Si/Pd₂Si, n⁺ -Si/NiSi, n⁺ -Si/TiSi₂, p⁺ -Si/Pd₂Si, p⁺ -Si/NiSi and p⁺ -Si/TiSi₂ structures using fourterminal resistor test patterns. Parasitic effects due to lateral current crowding at the entrance of the contact were taken into account in an accurate interpretation of the experimental results. The effect of silicide side-walls within the silicon is discussed and corrections for this effect are presented. For comparison, data obtained on test patterns conforming to the standard transmission line model are reported. Finally, the active dopant concentration profiles near the n⁺ -SiTiSi₂, n⁺ -SiPd₂Si and p⁺ -SiTiSi₂ interfaces were measured in order to derive the theoretical values of the contact resistivity and to compare these values with the experimental results.

Original language	English
Pages (from-to)	37-45
Journal	Thin Solid Films
Volume	130
Issue number	1-2
DOIs	https://doi.org/10.1016/0040-6090(85)90294-9
Publication status	Published - 1985
MoE publication type	A1 Journal article-refereed

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title = "Contact resistivity of silicon/silicide structures formed by thin film reactions",

abstract = "Contact resistance measurements were carried out on n+ -Si/Pd2Si, n+ -Si/NiSi, n+ -Si/TiSi2, p+ -Si/Pd2Si, p+ -Si/NiSi and p+ -Si/TiSi2 structures using fourterminal resistor test patterns. Parasitic effects due to lateral current crowding at the entrance of the contact were taken into account in an accurate interpretation of the experimental results. The effect of silicide side-walls within the silicon is discussed and corrections for this effect are presented. For comparison, data obtained on test patterns conforming to the standard transmission line model are reported. Finally, the active dopant concentration profiles near the n+ -SiTiSi2, n+ -SiPd2Si and p+ -SiTiSi2 interfaces were measured in order to derive the theoretical values of the contact resistivity and to compare these values with the experimental results.",

author = "Manuela Finetti and S. Guerri and Piero Negrini and Andrea Scorzoni and Ilkka Suni",

year = "1985",

doi = "10.1016/0040-6090(85)90294-9",

language = "English",

volume = "130",

pages = "37--45",

journal = "Thin Solid Films",

issn = "0040-6090",

publisher = "Elsevier",

number = "1-2",

}

TY - JOUR

T1 - Contact resistivity of silicon/silicide structures formed by thin film reactions

AU - Finetti, Manuela

AU - Guerri, S.

AU - Negrini, Piero

AU - Scorzoni, Andrea

AU - Suni, Ilkka

PY - 1985

Y1 - 1985

N2 - Contact resistance measurements were carried out on n+ -Si/Pd2Si, n+ -Si/NiSi, n+ -Si/TiSi2, p+ -Si/Pd2Si, p+ -Si/NiSi and p+ -Si/TiSi2 structures using fourterminal resistor test patterns. Parasitic effects due to lateral current crowding at the entrance of the contact were taken into account in an accurate interpretation of the experimental results. The effect of silicide side-walls within the silicon is discussed and corrections for this effect are presented. For comparison, data obtained on test patterns conforming to the standard transmission line model are reported. Finally, the active dopant concentration profiles near the n+ -SiTiSi2, n+ -SiPd2Si and p+ -SiTiSi2 interfaces were measured in order to derive the theoretical values of the contact resistivity and to compare these values with the experimental results.

AB - Contact resistance measurements were carried out on n+ -Si/Pd2Si, n+ -Si/NiSi, n+ -Si/TiSi2, p+ -Si/Pd2Si, p+ -Si/NiSi and p+ -Si/TiSi2 structures using fourterminal resistor test patterns. Parasitic effects due to lateral current crowding at the entrance of the contact were taken into account in an accurate interpretation of the experimental results. The effect of silicide side-walls within the silicon is discussed and corrections for this effect are presented. For comparison, data obtained on test patterns conforming to the standard transmission line model are reported. Finally, the active dopant concentration profiles near the n+ -SiTiSi2, n+ -SiPd2Si and p+ -SiTiSi2 interfaces were measured in order to derive the theoretical values of the contact resistivity and to compare these values with the experimental results.

U2 - 10.1016/0040-6090(85)90294-9

DO - 10.1016/0040-6090(85)90294-9

M3 - Article

SN - 0040-6090

VL - 130

SP - 37

EP - 45

JO - Thin Solid Films

JF - Thin Solid Films

IS - 1-2

ER -

Contact resistivity of silicon/silicide structures formed by thin film reactions

Abstract

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