Contactless electroreflectance study of band bending in Be-doped GaInNAs/GaAs quantum wells: The origin of photoluminescence enhancement

R. Kudrawiec; M. Gladysiewicz; J. Misiewicz; V.-M. Korpijärvi; Janne Pakarinen; J. Puustinen; P. Laukkanen; A. Laakso; M. Guina; M. Dumitrescu; M. Pessa

doi:10.1063/1.3462299

Contactless electroreflectance study of band bending in Be-doped GaInNAs/GaAs quantum wells: The origin of photoluminescence enhancement

R. Kudrawiec (Corresponding Author), M. Gladysiewicz, J. Misiewicz, V.-M. Korpijärvi, Janne Pakarinen, J. Puustinen, P. Laukkanen, A. Laakso, M. Guina, M. Dumitrescu, M. Pessa

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2 Citations (Scopus)

Abstract

Contactless electroreflectance (CER) has been applied to study band bending in Be-doped GaInNAs/GaAs quantum wells (QWs). It has been shown that (i) the sign of GaAs-related CER signal changes from positive to negative due to Be-doping and (ii) QW-related CER resonances disappear for Be-doped QWs whereas they are clearly observed for un-doped QWs. The two observations indicate a Be-related shift in the Fermi level above the hole levels in the QW region, i.e., the change in band bending in this system. The results point out that the experimentally-observed enhancement in QW photoluminescence upon Be-doping is associated with a better collection/confinement of photogenerated carriers by the Be-doped GaInNAs QW.

Original language	English
Article number	021902
Number of pages	3
Journal	Applied Physics Letters
Volume	97
Issue number	2
DOIs	https://doi.org/10.1063/1.3462299
Publication status	Published - 2010
MoE publication type	A1 Journal article-refereed

Keywords

electroreflectance
CER
quantum wells
QW
GaAs
GaInNAs

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Kudrawiec, R., Gladysiewicz, M., Misiewicz, J., Korpijärvi, V.-M., Pakarinen, J., Puustinen, J., Laukkanen, P., Laakso, A., Guina, M., Dumitrescu, M., & Pessa, M. (2010). Contactless electroreflectance study of band bending in Be-doped GaInNAs/GaAs quantum wells: The origin of photoluminescence enhancement. Applied Physics Letters, 97(2), Article 021902. https://doi.org/10.1063/1.3462299

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title = "Contactless electroreflectance study of band bending in Be-doped GaInNAs/GaAs quantum wells: The origin of photoluminescence enhancement",

abstract = "Contactless electroreflectance (CER) has been applied to study band bending in Be-doped GaInNAs/GaAs quantum wells (QWs). It has been shown that (i) the sign of GaAs-related CER signal changes from positive to negative due to Be-doping and (ii) QW-related CER resonances disappear for Be-doped QWs whereas they are clearly observed for un-doped QWs. The two observations indicate a Be-related shift in the Fermi level above the hole levels in the QW region, i.e., the change in band bending in this system. The results point out that the experimentally-observed enhancement in QW photoluminescence upon Be-doping is associated with a better collection/confinement of photogenerated carriers by the Be-doped GaInNAs QW.",

keywords = "electroreflectance, CER, quantum wells, QW, GaAs, GaInNAs",

author = "R. Kudrawiec and M. Gladysiewicz and J. Misiewicz and V.-M. Korpij{\"a}rvi and Janne Pakarinen and J. Puustinen and P. Laukkanen and A. Laakso and M. Guina and M. Dumitrescu and M. Pessa",

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Kudrawiec, R, Gladysiewicz, M, Misiewicz, J, Korpijärvi, V-M, Pakarinen, J, Puustinen, J, Laukkanen, P, Laakso, A, Guina, M, Dumitrescu, M & Pessa, M 2010, 'Contactless electroreflectance study of band bending in Be-doped GaInNAs/GaAs quantum wells: The origin of photoluminescence enhancement', Applied Physics Letters, vol. 97, no. 2, 021902. https://doi.org/10.1063/1.3462299

TY - JOUR

T1 - Contactless electroreflectance study of band bending in Be-doped GaInNAs/GaAs quantum wells

T2 - The origin of photoluminescence enhancement

AU - Kudrawiec, R.

AU - Gladysiewicz, M.

AU - Misiewicz, J.

AU - Korpijärvi, V.-M.

AU - Pakarinen, Janne

AU - Puustinen, J.

AU - Laukkanen, P.

AU - Laakso, A.

AU - Guina, M.

AU - Dumitrescu, M.

AU - Pessa, M.

PY - 2010

Y1 - 2010

N2 - Contactless electroreflectance (CER) has been applied to study band bending in Be-doped GaInNAs/GaAs quantum wells (QWs). It has been shown that (i) the sign of GaAs-related CER signal changes from positive to negative due to Be-doping and (ii) QW-related CER resonances disappear for Be-doped QWs whereas they are clearly observed for un-doped QWs. The two observations indicate a Be-related shift in the Fermi level above the hole levels in the QW region, i.e., the change in band bending in this system. The results point out that the experimentally-observed enhancement in QW photoluminescence upon Be-doping is associated with a better collection/confinement of photogenerated carriers by the Be-doped GaInNAs QW.

AB - Contactless electroreflectance (CER) has been applied to study band bending in Be-doped GaInNAs/GaAs quantum wells (QWs). It has been shown that (i) the sign of GaAs-related CER signal changes from positive to negative due to Be-doping and (ii) QW-related CER resonances disappear for Be-doped QWs whereas they are clearly observed for un-doped QWs. The two observations indicate a Be-related shift in the Fermi level above the hole levels in the QW region, i.e., the change in band bending in this system. The results point out that the experimentally-observed enhancement in QW photoluminescence upon Be-doping is associated with a better collection/confinement of photogenerated carriers by the Be-doped GaInNAs QW.

KW - electroreflectance

KW - CER

KW - quantum wells

KW - QW

KW - GaAs

KW - GaInNAs

U2 - 10.1063/1.3462299

DO - 10.1063/1.3462299

M3 - Article

SN - 0003-6951

VL - 97

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 2

M1 - 021902

ER -

Contactless electroreflectance study of band bending in Be-doped GaInNAs/GaAs quantum wells: The origin of photoluminescence enhancement

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Keywords

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