Contactless electroreflectance study of band bending in Be-doped GaInNAs/GaAs quantum wells: The origin of photoluminescence enhancement

R. Kudrawiec (Corresponding Author), M. Gladysiewicz, J. Misiewicz, V.-M. Korpijärvi, Janne Pakarinen, J. Puustinen, P. Laukkanen, A. Laakso, M. Guina, M. Dumitrescu, M. Pessa

Research output: Contribution to journalArticleScientificpeer-review

2 Citations (Scopus)

Abstract

Contactless electroreflectance (CER) has been applied to study band bending in Be-doped GaInNAs/GaAs quantum wells (QWs). It has been shown that (i) the sign of GaAs-related CER signal changes from positive to negative due to Be-doping and (ii) QW-related CER resonances disappear for Be-doped QWs whereas they are clearly observed for un-doped QWs. The two observations indicate a Be-related shift in the Fermi level above the hole levels in the QW region, i.e., the change in band bending in this system. The results point out that the experimentally-observed enhancement in QW photoluminescence upon Be-doping is associated with a better collection/confinement of photogenerated carriers by the Be-doped GaInNAs QW.
Original languageEnglish
Article number021902
Number of pages3
JournalApplied Physics Letters
Volume97
Issue number2
DOIs
Publication statusPublished - 2010
MoE publication typeA1 Journal article-refereed

Keywords

  • electroreflectance
  • CER
  • quantum wells
  • QW
  • GaAs
  • GaInNAs

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