Abstract
This chapter shows how to measure and manipulate a single spin in a complementary metal-oxide semiconductor (CMOS) device fabricated in a preindustrial 300 mm CMOS foundry. The spin manipulation is done by a microwave electric field applied directly on a gate. In macroscopic silicon crystals the electrons are localized on donors. In nanoscopic transistors the carriers can be localized on either quantum dots or donors. The trigate nanowire technology enables the manipulation of either electrons or holes, depending on the nature of the source-drain doping and on the polarity of the gate voltage. The spin qubit is based on a p-type metal-oxide semiconductor type of nanowire field-effect transistors that allows for the first time the realization of a hole spin qubit. The decisive advantage of using holes is that the spin can be manipulated by an electric voltage applied on standard gates, thanks to spin-orbit coupling.
| Original language | English |
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| Title of host publication | Emerging Devices for Low-Power and High-Performance Nanosystems: Physics, Novel Functions, and Data Processing |
| Publisher | Taylor & Francis |
| Number of pages | 30 |
| Edition | 1st |
| ISBN (Electronic) | 9780429458736 |
| Publication status | Published - 2018 |
| MoE publication type | A3 Part of a book or another research book |